Epitaxial growth of Bi 2 Se 3 thin films is of great current interest due to the advantages in spintronics and thermoelectrical applications. In this paper, Bi 2 Se 3 thin films on Si (111) substrate have been prepared via magnetron sputtering deposition with post-annealing treatment and their microstructures and electrical transport properties were studied. Good quality with highly c-axis oriented films could be obtained after post-annealing treatment. The annealing temperature (T a ) obviously affected the phase structures and electrical properties. The crystallinity and the lattice parameters c of the Bi 2 Se 3 thin-films increased with increasing T a . The relative atomic ratio of Se / Bi decreased with increasing T a and large number of Se vacancies was discovered in films with T a = 350° C . The resistivity of films decreased monotonously and showed weakly metallic resistivity with the increase of T a . Non-saturated high-field linear magnetoresistance and weak antilocalization were found in films with higher T a .
Weak antilocalization in Cd3As2 thin films
