scholarly journals Weak antilocalization and electron–electron interaction in coupled multiple-channel transport in a Bi2Se3 thin film

Nanoscale ◽  
2016 ◽  
Vol 8 (4) ◽  
pp. 1879-1885 ◽  
Author(s):  
Yumei Jing ◽  
Shaoyun Huang ◽  
Kai Zhang ◽  
Jinxiong Wu ◽  
Yunfan Guo ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Transport Properties ◽  
Topological Insulator ◽  
Van Der Waals ◽  
Electron Interaction ◽  
Weak Antilocalization ◽  
High Crystalline Quality ◽  
Multiple Channel ◽  
Channel Transport

High crystalline quality topological insulator Bi2Se3 thin films are grown by van der Waals epitaxy on fluorophlogopite mica substrates and the excellent transport properties of the as-grown films are extracted from the magnetotransport measurements.

scholarly journals Fabrication, micro-structure characteristics and transport properties of co-evaporated thin films of Bi2Te3 on AlN coated stainless steel foils

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Aziz Ahmed ◽  
Seungwoo Han
Keyword(s):  
Thin Film ◽  
Crystal Structure ◽  
Thin Films ◽  
Stainless Steel ◽  
Substrate Temperature ◽  
Transport Properties ◽  
Structural Defects ◽  
Film Composition ◽  
High Substrate ◽  
Foil Substrate

AbstractN-type bismuth telluride (Bi2Te3) thin films were prepared on an aluminum nitride (AlN)-coated stainless steel foil substrate to obtain optimal thermoelectric performance. The thermal co-evaporation method was adopted so that we could vary the thin film composition, enabling us to investigate the relationship between the film composition, microstructure, crystal preferred orientation and thermoelectric properties. The influence of the substrate temperature was also investigated by synthesizing two sets of thin film samples; in one set the substrate was kept at room temperature (RT) while in the other set the substrate was maintained at a high temperature, of 300 °C, during deposition. The samples deposited at RT were amorphous in the as-deposited state and therefore were annealed at 280 °C to promote crystallization and phase development. The electrical resistivity and Seebeck coefficient were measured and the results were interpreted. Both the transport properties and crystal structure were observed to be strongly affected by non-stoichiometry and the choice of substrate temperature. We observed columnar microstructures with hexagonal grains and a multi-oriented crystal structure for the thin films deposited at high substrate temperatures, whereas highly (00 l) textured thin films with columns consisting of in-plane layers were fabricated from the stoichiometric annealed thin film samples originally synthesized at RT. Special emphasis was placed on examining the nature of tellurium (Te) atom based structural defects and their influence on thin film properties. We report maximum power factor (PF) of 1.35 mW/m K2 for near-stoichiometric film deposited at high substrate temperature, which was the highest among all studied cases.

scholarly journals Resistive switching in diamondoid thin films

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
A. Jantayod ◽  
D. Doonyapisut ◽  
T. Eknapakul ◽  
M. F. Smith ◽  
W. Meevasana
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Transport Properties ◽  
Resistive Switching ◽  
Electrical Transport ◽  
Hysteresis Curve ◽  
Applied Potential ◽  
Electrical Transport Properties ◽  
Non Volatile Memory ◽  
Memory Applications

Abstract The electrical transport properties of a thin film of the diamondoid adamantane, deposited on an Au/W substrate, were investigated experimentally. The current I, in applied potential V, from the admantane-thiol/metal heterstructure to a wire lead on its surface exhibited non-symmetric (diode-like) characteristics and a signature of resistive switching (RS), an effect that is valuable to non-volatile memory applications. I(V) follows a hysteresis curve that passes twice through $$I(0)=0$$ I ( 0 ) = 0 linearly, indicating RS between two states with significantly different conductances, possibly due to an exotic mechanism.

Time‐Dependent Electrical Transport Properties of Topological Insulator Cr‐Doped Bi 2 Se 3 Thin Films

2019 ◽  
Vol 256 (5) ◽  
pp. 1800735 ◽  
Author(s):  
Qiu Lin Li ◽  
Xing Hua Zhang ◽  
Wen Jie Wang ◽  
Zhi Qing Li ◽  
Ding Bang Zhou ◽  
...  
Keyword(s):  
Thin Films ◽  
Transport Properties ◽  
Topological Insulator ◽  
Electrical Transport ◽  
Time Dependent ◽  
Electrical Transport Properties

Thickness dependent quantum oscillations of transport properties in topological insulator Bi2Te3 thin films

2015 ◽  
Vol 106 (5) ◽  
pp. 053103 ◽  
Author(s):  
E. I. Rogacheva ◽  
A. V. Budnik ◽  
A. Yu. Sipatov ◽  
O. N. Nashchekina ◽  
M. S. Dresselhaus
Keyword(s):  
Thin Films ◽  
Transport Properties ◽  
Topological Insulator ◽  
Quantum Oscillations

Effects of Pb Doping on Hole Transport Properties and Thin-Film Transistor Characteristics of SnO Thin Films

2015 ◽  
Vol 4 (3) ◽  
pp. Q26-Q30 ◽  
Author(s):  
Min Liao ◽  
Zewen Xiao ◽  
Fan-Yong Ran ◽  
Hideya Kumomi ◽  
Toshio Kamiya ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Transport Properties ◽  
Thin Film Transistor ◽  
Hole Transport ◽  
Pb Doping

Quantum Size Effects in Transport Properties of Bi2Te3 Topological Insulator Thin Films

2017 ◽  
Vol 46 (7) ◽  
pp. 3949-3957 ◽  
Author(s):  
E. I. Rogacheva ◽  
A. V. Budnik ◽  
O. N. Nashchekina ◽  
A. V. Meriuts ◽  
M. S. Dresselhaus
Keyword(s):  
Thin Films ◽  
Transport Properties ◽  
Topological Insulator ◽  
Size Effects ◽  
Quantum Size Effects ◽  
Quantum Size

Thickness oscillations of the transport properties in n-type Bi2Te3 topological insulator thin films

2015 ◽  
Vol 594 ◽  
pp. 109-114 ◽  
Author(s):  
E.I. Rogacheva ◽  
A.V. Budnik ◽  
A.Yu. Sipatov ◽  
O.N. Nashchekina ◽  
A.G. Fedorov ◽  
...  
Keyword(s):  
Thin Films ◽  
Transport Properties ◽  
Topological Insulator

TRANSPORT PROPERTIES OF ELECTRON-DOPED La2−xCexCuO4 THIN FILM IN THE UNDER-DOPED REGION

2007 ◽  
Vol 21 (18n19) ◽  
pp. 3258-3261
Author(s):  
J. YUAN ◽  
H. WU ◽  
L. ZHAO ◽  
K. JIN ◽  
B. XU ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Transport Properties ◽  
Fermi Liquid ◽  
Kondo Effect ◽  
Two Dimensional ◽  
Optimal Doping ◽  
Semiconductor Behavior ◽  
Liquid Behavior ◽  
Fermi Liquid Behavior

Underdoped electron-doped La 2-x Ce x CuO 4 ( x =0.06-0.09) thin films were successfully grown and investigated for the transport properties in ab-plane. It was found that the in-plane resistivity ρab shows a semiconductor behavior when x =0.06, with increasing the Ce concentration to the optimal doping level, it changes to the two dimensional Fermi-liquid behavior. In the films with x≥0.08, a Kondo effect like scattering is observed in the low temperature range.

Growth and transport properties of topological insulator Bi 2 Se 3 thin film on a ferromagnetic insulating substrate

2018 ◽  
Vol 27 (7) ◽  
pp. 076801 ◽  
Author(s):  
Shanna Zhu ◽  
Gang Shi ◽  
Peng Zhao ◽  
Dechao Meng ◽  
Genhao Liang ◽  
...  
Keyword(s):  
Thin Film ◽  
Transport Properties ◽  
Topological Insulator
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