scholarly journals Ultrathin amorphous zinc-tin-oxide buffer layer for enhancing heterojunction interface quality in metal-oxide solar cells

2013 ◽  
Vol 6 (7) ◽  
pp. 2112 ◽  
Author(s):  
Yun Seog Lee ◽  
Jaeyeong Heo ◽  
Sin Cheng Siah ◽  
Jonathan P. Mailoa ◽  
Riley E. Brandt ◽  
...  
Keyword(s):  
Solar Cells ◽  
Metal Oxide ◽  
Buffer Layer ◽  
Tin Oxide ◽  
Interface Quality ◽  
Zinc Tin Oxide

Highly conductive Zinc-Tin-Oxide buffer layer for inverted polymer solar cells

2016 ◽  
Vol 33 ◽  
pp. 156-163 ◽  
Author(s):  
Leiming Yu ◽  
Deying Luo ◽  
Hai Wang ◽  
Taoyu Zou ◽  
Li Luo ◽  
...  
Keyword(s):  
Solar Cells ◽  
Buffer Layer ◽  
Tin Oxide ◽  
Polymer Solar Cells ◽  
Zinc Tin Oxide ◽  
Inverted Polymer Solar Cells

Ag Doped Zinc Tin Oxide as Cathode for Organic Photovoltaic Cells

2012 ◽  
Vol 209-211 ◽  
pp. 1719-1722
Author(s):  
Ming Guo Zhang ◽  
Nan Hai Sun
Keyword(s):  
Solar Cells ◽  
Tin Oxide ◽  
Organic Solar Cells ◽  
Indium Tin Oxide ◽  
Bulk Heterojunction ◽  
Indium Tin Oxide Electrode ◽  
Heterojunction Solar Cells ◽  
Visible Part ◽  
Cell Architecture ◽  
Zinc Tin Oxide

A thin Ag layer embedded between layers of zinc tin oxide (ZTO) are compared to cells using an indium tin oxide electrode was investigated for inverted organic bulk heterojunction solar cells employing a multilayer electrode. ZTO/Ag/ ZTO (ZAZ) electrode is the preparation at room temperature, a high transparency in the visible part of the spectrum, and a very low sheet resistance comparable to treated ITO without the need for any thermal post deposition treatment as it is necessary for ITO. The In-free ZAZ electrodes exhibit a favorable work function of 4.3 eV and are shown to allow for excellent electron extraction even without a further interlayer. This renders ZAZ a perfectly suited bottom electrode for inverted organic solar cells with simplified cell architecture.

Efficient semi-transparent perovskite solar cells with a novel indium zinc tin oxide top electrode grown by linear facing target sputtering

2019 ◽  
Vol 437 ◽  
pp. 226894 ◽  
Author(s):  
Yong-Jin Noh ◽  
Jae-Gyeong Kim ◽  
Seok-Soon Kim ◽  
Han-Ki Kim ◽  
Seok-In Na
Keyword(s):  
Solar Cells ◽  
Tin Oxide ◽  
Perovskite Solar Cells ◽  
Zinc Tin Oxide ◽  
Facing Target Sputtering

scholarly journals Interfacial Modification for High-Efficiency Vapor-Phase-Deposited Perovskite Solar Cells Based on a Metal Oxide Buffer Layer

2018 ◽  
Vol 9 (5) ◽  
pp. 1041-1046 ◽  
Author(s):  
Daniel Pérez-del-Rey ◽  
Pablo P. Boix ◽  
Michele Sessolo ◽  
Afshin Hadipour ◽  
Henk J. Bolink
Keyword(s):  
Solar Cells ◽  
Metal Oxide ◽  
Buffer Layer ◽  
Vapor Phase ◽  
High Efficiency ◽  
Perovskite Solar Cells ◽  
Interfacial Modification

Manipulating the morphology of CdS/Sb2S3 heterojunction using a Mg-doped tin oxide buffer layer for highly efficient solar cells

2021 ◽  
Author(s):  
Jiashuai Li ◽  
Liangbin Xiong ◽  
Xuzhi Hu ◽  
Jiwei Liang ◽  
Cong Chen ◽  
...  
Keyword(s):  
Solar Cells ◽  
Buffer Layer ◽  
Tin Oxide ◽  
Highly Efficient ◽  
Mg Doped

scholarly journals Study of Self-Patterned Zinc Tin Oxide Thin-Film Transistors Prepared from Photocurable Precursor Solution with Photoacid Generator

2021 ◽  
Vol 59 (3) ◽  
pp. 162-167
Author(s):  
Jae Young Kim ◽  
Geonoh Choe ◽  
Tae Kyu An ◽  
Yong Jin Jeong
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Metal Oxide ◽  
Tin Oxide ◽  
Thin Film Transistors ◽  
Precursor Solution ◽  
Oxide Thin Film ◽  
Solution Processed ◽  
Zinc Tin Oxide ◽  
Photoacid Generator

Solution-processed zinc tin oxide (ZTO) thin-film transistors (TFTs) have great potential uses in next-generation wearable and flexible electronic products. Zinc and tin precursor materials are naturally abundant and have low fabrication costs. To integrate a single ZTO TFT into logic circuits including inverters, NAND, and NOR gates will require the development of a facile patterning process to replace conventional and complicated photolithography techniques which are usually time-consuming and toxic. In this study, self-patterned ZTO thin films were prepared using a photo-patternable precursor solution including a photoacid generator, (4-methylthiophenyl)methyl phenyl sulfonium triflate. Solution-processed ZTO precursor films fabricated with the photoacid generator were successfully micropatterned by UV exposure, and transitioned to a semiconducting ZTO thin film by heat treatment. The UV-irradiated precursor films became insoluble in developing solvent as the generated proton from the photoacid generator affected the metal-containing ligand and changed the solubility of the metal oxide precursors. The resulting ZTO thin films were utilized as the active layers of n-type TFTs, which exhibited a typical n-type transfer, and output characteristics with appropriate threshold voltage, on/off current ratio, and field-effect mobility. We believe that our work provides a convenient solution-based route to the fabrication of metal-oxide semiconductor patterns.

Role of zinc tin oxide passivation layer at back electrode interface in improving efficiency of Cu2ZnSn(S,Se)4 solar cells

2021 ◽  
pp. 107133
Author(s):  
Xiaoyu Yang ◽  
Bin Yao ◽  
Zhanhui Ding ◽  
Rui Deng ◽  
Man Zhao ◽  
...  
Keyword(s):  
Solar Cells ◽  
Tin Oxide ◽  
Passivation Layer ◽  
Zinc Tin Oxide ◽  
Electrode Interface

Light-soaking issue in polymer solar cells: Photoinduced energy level alignment at the sol-gel processed metal oxide and indium tin oxide interface

2012 ◽  
Vol 111 (11) ◽  
pp. 114511 ◽  
Author(s):  
Junghwan Kim ◽  
Geunjin Kim ◽  
Youna Choi ◽  
Jongjin Lee ◽  
Sung Heum Park ◽  
...  
Keyword(s):  
Solar Cells ◽  
Energy Level ◽  
Metal Oxide ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Polymer Solar Cells ◽  
Sol Gel ◽  
Oxide Interface ◽  
Energy Level Alignment
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