Metal Oxide Semiconductors: Direct Photopatterning of Solution-Processed Amorphous Indium Zinc Oxide and Zinc Tin Oxide Semiconductors-A Chimie Douce Molecular Precursor Approach to Thin Film Electronic Oxides (Adv. Mater. Interfaces 15/2018)

2018 ◽  
Vol 5 (15) ◽  
pp. 1870073
Author(s):  
Shawn Sanctis ◽  
Rudolf C. Hoffmann ◽  
Michael Bruns ◽  
Jörg J. Schneider
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Metal Oxide ◽  
Tin Oxide ◽  
Metal Oxide Semiconductors ◽  
Solution Processed ◽  
Oxide Semiconductors ◽  
Indium Zinc Oxide ◽  
Molecular Precursor ◽  
Zinc Tin Oxide

Solution-Processed Oxide Thin-Film Transistor with Spin-Coated Zinc Tin Oxide Active Layer and Indium Zinc Oxide Source/Drain Electrodes

2019 ◽  
Vol 33 (5) ◽  
pp. 289-294
Author(s):  
Yong-Jin Kim ◽  
Jeong-Soo Lee ◽  
Yong-Uk Lee ◽  
Seung-Hwan Cho ◽  
Yong-Hoon Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Active Layer ◽  
Tin Oxide ◽  
Thin Film Transistor ◽  
Oxide Thin Film ◽  
Solution Processed ◽  
Indium Zinc Oxide ◽  
Zinc Tin Oxide

Optimization of the Solution-Based Indium-Zinc Oxide/Zinc-Tin Oxide Channel Layer for Thin-Film Transistors

2018 ◽  
Vol 18 (9) ◽  
pp. 5913-5918 ◽  
Author(s):  
Kiwon Lim ◽  
Pyungho Choi ◽  
Sangsub Kim ◽  
Hyunki Kim ◽  
Minsoo Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Tin Oxide ◽  
Thin Film Transistors ◽  
Channel Layer ◽  
Indium Zinc Oxide ◽  
Zinc Tin Oxide

A Study of Solution-Processed Zinc–Tin-Oxide Semiconductors for Thin-Film Transistors

2019 ◽  
Vol 66 (6) ◽  
pp. 2631-2636 ◽  
Author(s):  
Chih-Chieh Hsu ◽  
Cheng-Han Chou ◽  
Yu-Ting Chen ◽  
Wun-Ciang Jhang
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Thin Film Transistors ◽  
Solution Processed ◽  
Oxide Semiconductors ◽  
Zinc Tin Oxide

scholarly journals Study of Self-Patterned Zinc Tin Oxide Thin-Film Transistors Prepared from Photocurable Precursor Solution with Photoacid Generator

2021 ◽  
Vol 59 (3) ◽  
pp. 162-167
Author(s):  
Jae Young Kim ◽  
Geonoh Choe ◽  
Tae Kyu An ◽  
Yong Jin Jeong
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Metal Oxide ◽  
Tin Oxide ◽  
Thin Film Transistors ◽  
Precursor Solution ◽  
Oxide Thin Film ◽  
Solution Processed ◽  
Zinc Tin Oxide ◽  
Photoacid Generator

Solution-processed zinc tin oxide (ZTO) thin-film transistors (TFTs) have great potential uses in next-generation wearable and flexible electronic products. Zinc and tin precursor materials are naturally abundant and have low fabrication costs. To integrate a single ZTO TFT into logic circuits including inverters, NAND, and NOR gates will require the development of a facile patterning process to replace conventional and complicated photolithography techniques which are usually time-consuming and toxic. In this study, self-patterned ZTO thin films were prepared using a photo-patternable precursor solution including a photoacid generator, (4-methylthiophenyl)methyl phenyl sulfonium triflate. Solution-processed ZTO precursor films fabricated with the photoacid generator were successfully micropatterned by UV exposure, and transitioned to a semiconducting ZTO thin film by heat treatment. The UV-irradiated precursor films became insoluble in developing solvent as the generated proton from the photoacid generator affected the metal-containing ligand and changed the solubility of the metal oxide precursors. The resulting ZTO thin films were utilized as the active layers of n-type TFTs, which exhibited a typical n-type transfer, and output characteristics with appropriate threshold voltage, on/off current ratio, and field-effect mobility. We believe that our work provides a convenient solution-based route to the fabrication of metal-oxide semiconductor patterns.

scholarly journals Direct Patterned Zinc-Tin-Oxide for Solution-Processed Thin-Film Transistors and Complementary Inverter through Electrohydrodynamic Jet Printing

Nanomaterials ◽  
2020 ◽  
Vol 10 (7) ◽  
pp. 1304
Author(s):  
Heqing Ye ◽  
Hyeok-Jin Kwon ◽  
Xiaowu Tang ◽  
Dong Yun Lee ◽  
Sooji Nam ◽  
...  
Keyword(s):  
Thin Film ◽  
Metal Oxide ◽  
Tin Oxide ◽  
Thin Film Transistors ◽  
Homogeneous Solution ◽  
Large Area ◽  
Solution Processed ◽  
Tin Chloride ◽  
Zinc Tin Oxide ◽  
Jet Printing

The solution-processed deposition of metal-oxide semiconducting materials enables the fabrication of large-area and low-cost electronic devices by using printing technologies. Additionally, the simple patterning process of these types of materials become an important issue, as it can simplify the cost and process of fabricating electronics such as thin-film transistors (TFTs). In this study, using the electrohydrodynamic (EHD) jet printing technique, we fabricated directly patterned zinc-tin-oxide (ZTO) semiconductors as the active layers of TFTs. The straight lines of ZTO semiconductors were successfully drawn using a highly soluble and homogeneous solution that comprises zinc acrylate and tin-chloride precursors. Besides, we found the optimum condition for the fabrication of ZTO oxide layers by analyzing the thermal effect in processing. Using the optimized condition, the resulting devices exhibited satisfactory TFT characteristics with conventional electrodes and conducting materials. Furthermore, these metal-oxide TFTs were successfully applied to complementary inverter with conventional p-type organic semiconductor-based TFT, showing high quality of voltage transfer characteristics. Thus, these printed ZTO TFT results demonstrated that solution processable metal-oxide transistors are promising for the realization of a more sustainable and printable next-generation industrial technology.

Understanding the temperature-dependent evolution of solution processed metal oxide transistor characteristics based on molecular precursor derived amorphous indium zinc oxide

2016 ◽  
Vol 4 (46) ◽  
pp. 10935-10944 ◽  
Author(s):  
Shawn Sanctis ◽  
Rudolf C. Hoffmann ◽  
Ruben Precht ◽  
Wolfgang Anwand ◽  
Jörg J. Schneider
Keyword(s):  
Zinc Oxide ◽  
Metal Oxide ◽  
Positron Annihilation ◽  
Emission Spectroscopy ◽  
Positron Annihilation Spectroscopy ◽  
Temperature Dependent ◽  
Photoelectron Emission ◽  
Solution Processed ◽  
Indium Zinc Oxide ◽  
Molecular Precursor

Photoelectron emission spectroscopy and positron annihilation spectroscopy allow a comprehensive interpretation of the performance of IZO-based TFTs.

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