Modification of a polymer gate insulator by zirconium oxide doping for low temperature, high performance indium zinc oxide transistors

RSC Advances ◽  
2014 ◽  
Vol 4 (86) ◽  
pp. 45742-45748 ◽  
Author(s):  
Byeong-Geun Son ◽  
So Yeon Je ◽  
Hyo Jin Kim ◽  
Jae Kyeong Jeong
Keyword(s):  
Zinc Oxide ◽  
Low Temperature ◽  
Zirconium Oxide ◽  
High Performance ◽  
Gate Insulator ◽  
Indium Zinc Oxide

Wide range modulation of synaptic weight in thin-film transistors with hafnium oxide gate insulator and indium-zinc oxide channel layer for artificial synapse application

Nanoscale ◽  
2021 ◽  
Author(s):  
Keonwon Beom ◽  
Jimin Han ◽  
Hyun-Mi Kim ◽  
Tae-Sik Yoon
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistors ◽  
Hafnium Oxide ◽  
Synaptic Weight ◽  
Drain Current ◽  
Gate Insulator ◽  
Channel Layer ◽  
Indium Zinc Oxide ◽  
Wide Range

Wide range synaptic weight modulation with a tunable drain current was demonstrated in thin-film transistors (TFTs) with a hafnium oxide (HfO2−x) gate insulator and an indium-zinc oxide (IZO) channel layer...

Low temperature solution processed high-κ zirconium oxide gate insulator by Broadband-UV annealing

2018 ◽  
Vol 57 ◽  
pp. 341-344 ◽  
Author(s):  
Dongping Wang ◽  
Jiangang Lu ◽  
Yongseon Jeon ◽  
Shihong Ouyang ◽  
Yingtao Xie ◽  
...  
Keyword(s):  
Low Temperature ◽  
Zirconium Oxide ◽  
Gate Insulator ◽  
Solution Processed ◽  
Temperature Solution
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