Room temperature fabricated transparent amorphous indium zinc oxide based thin film transistor using high-κ HfO2 as gate insulator

2012 ◽  
Vol 520 (7) ◽  
pp. 3079-3083 ◽  
Author(s):  
Wen-Kai Lin ◽  
Kou-Chen Liu ◽  
Shu-Tong Chang ◽  
Chi-Shiau Li
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Room Temperature ◽  
Thin Film Transistor ◽  
Gate Insulator ◽  
Indium Zinc Oxide

scholarly journals High-Performance Thin Film Transistor with an Neodymium-Doped Indium Zinc Oxide/Al2O3 Nanolaminate Structure Processed at Room Temperature

Materials ◽  
2018 ◽  
Vol 11 (10) ◽  
pp. 1871 ◽  
Author(s):  
Rihui Yao ◽  
Xiaoqing Li ◽  
Zeke Zheng ◽  
Xiaochen Zhang ◽  
Mei Xiong ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
High Performance ◽  
Room Temperature ◽  
Thin Film Transistor ◽  
Charge Trapping ◽  
Electrical Performance ◽  
Al2o3 Layer ◽  
X Ray ◽  
Indium Zinc Oxide

In this work, a high-performance thin film transistor with an neodymium-doped indium zinc oxide (Nd:IZO) semiconductor via a room temperature approach and adopting the Nd:IZO/Al2O3 nanolaminate structure was investigated. The effects of the ultrathin Al2O3 layer and the thickness of Nd:IZO layer in the nanolaminate structure on the improvement of electrical performance and stability of thin film transistors (TFTs) were systematically studied. Besides the carrier movement confined along the near-channel region, driven by the Al2O3 layer under an electrical field, the high performance of the TFT is also attributed to the high quality of the 8-nm-thick Nd:IZO layer and the corresponding optimal Nd:IZO/Al2O3 interface, which reduce the scattering effect and charge trapping with strong M–O bonds in bulk and the back-channel surface of Nd:IZO, according to the X-ray reflectivity (XRR), X-ray photoelectron spectroscopy (XPS), and micro-wave photo conductivity decay (μ-PCD) results. As a result, the Nd:IZO/Al2O3 TFT exhibits an outstanding performance, with a high μsat of 32.7 cm2·V−1·s−1, an Ion/Ioff of 1.9 × 108, and a low subthreshold swing (SS) value of 0.33 V·dec−1, which shows great potential for the room temperature fabrication of TFTs in high-resolution or high-frame-rate displays by a scalable, simple, and feasible approach.

Wide range modulation of synaptic weight in thin-film transistors with hafnium oxide gate insulator and indium-zinc oxide channel layer for artificial synapse application

Nanoscale ◽  
2021 ◽  
Author(s):  
Keonwon Beom ◽  
Jimin Han ◽  
Hyun-Mi Kim ◽  
Tae-Sik Yoon
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistors ◽  
Hafnium Oxide ◽  
Synaptic Weight ◽  
Drain Current ◽  
Gate Insulator ◽  
Channel Layer ◽  
Indium Zinc Oxide ◽  
Wide Range

Wide range synaptic weight modulation with a tunable drain current was demonstrated in thin-film transistors (TFTs) with a hafnium oxide (HfO2−x) gate insulator and an indium-zinc oxide (IZO) channel layer...

Capillary-Force-Pattern Formation of Indium-Zinc-Oxide Thin-Film Transistor

2019 ◽  
Vol 19 (4) ◽  
pp. 2179-2182
Author(s):  
Hyunji Shin ◽  
Dongwook Kim ◽  
Jaehoon Park ◽  
Seong-Ho Song ◽  
Jong Sun Choi
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Pattern Formation ◽  
Capillary Force ◽  
Thin Film Transistor ◽  
Oxide Thin Film ◽  
Zinc Oxide Thin Film ◽  
Indium Zinc Oxide

Bottom-Gate Gallium Indium Zinc Oxide Thin-Film Transistor Array for High-Resolution AMOLED Display

2008 ◽  
Vol 29 (12) ◽  
pp. 1309-1311 ◽  
Author(s):  
Jang Yeon Kwon ◽  
Kyoung Seok Son ◽  
Ji Sim Jung ◽  
Tae Sang Kim ◽  
Myung Kwan Ryu ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
High Resolution ◽  
Thin Film Transistor ◽  
Oxide Thin Film ◽  
Zinc Oxide Thin Film ◽  
Indium Zinc Oxide ◽  
Bottom Gate

P-67: Wet Etching of Gallium Indium Zinc Oxide (GIZO) Semiconductor for Thin Film Transistor Application

2008 ◽  
Vol 39 (1) ◽  
pp. 1439 ◽  
Author(s):  
Jong Hyun Seo ◽  
Sang-Hyuk Lee ◽  
Bo-Hyun Seo ◽  
Jae-Hong Jeon ◽  
HeeHwan Choe ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistor ◽  
Wet Etching ◽  
Indium Zinc Oxide
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