Getting real: influence of structural disorder on the performance of plasmonic hole array sensors fabricated by a bottom-up approach

2014 ◽  
Vol 2 (36) ◽  
pp. 7632-7638 ◽  
Author(s):  
S. B. Quint ◽  
C. Pacholski

Periodic hole arrays in gold films showing extraordinary transmission of light are fabricated using solely chemical methods. The degree of order of the hole arrays has a strong impact on their transmission properties, which can be utilized for a spectral quality control of the produced plasmonic sensors.

Optik ◽  
2014 ◽  
Vol 125 (18) ◽  
pp. 5171-5175 ◽  
Author(s):  
Mahmood Hosseini Farzad ◽  
Mozhdeh Janfada ◽  
Mahdieh Hashemi

Sensors ◽  
2020 ◽  
Vol 21 (1) ◽  
pp. 180
Author(s):  
Chi-Feng Chen ◽  
Chih-Hsiung Shen ◽  
Yun-Ying Yeh

A thermopile device with sub-wavelength hole array (SHA) is numerically and experimentally investigated. The infrared absorbance (IRA) effect of SHAs in active area of the thermopile device is clearly analyzed by the finite-difference time-domain (FDTD) method. The prototypes are manufactured by the 0.35 μm 2P4M complementary metal-oxide-semiconductor micro-electro-mechanical-systems (CMOS-MEMS) process in Taiwan semiconductor manufacturing company (TSMC). The measurement results of those prototypes are similar to their simulation results. Based on the simulation technology, more sub-wavelength hole structural effects for IRA of such thermopile device are discussed. It is found from simulation results that the results of SHAs arranged in a hexagonal shape are significantly better than the results of SHAs arranged in a square and the infrared absorption efficiencies (IAEs) of specific asymmetric rectangle and elliptical hole structure arrays are higher than the relatively symmetric square and circular hole structure arrays. The overall best results are respectively up to 3.532 and 3.573 times higher than that without sub-wavelength structure at the target temperature of 60 °C when the minimum structure line width limit of the process is ignored. Obviously, the IRA can be enhanced when the SHAs are considered in active area of the thermopile device and the structural optimization of the SHAs is absolutely necessary.


2019 ◽  
Vol 48 (7) ◽  
pp. 721001
Author(s):  
韩 晶 Han Jing ◽  
邵雅斌 Shao Yabin ◽  
王 君 Wang Jun ◽  
肇 欣 Zhao Xin ◽  
高亚臣 Gao Yachen

2020 ◽  
Vol 10 (8) ◽  
pp. 2966 ◽  
Author(s):  
Yun-Ying Yeh ◽  
Chih-Hsiung Shen ◽  
Chi-Feng Chen

The infrared absorption efficiency (IAE) enhancement of the complementary-metal-oxide-semiconductorCMOS compatible thermopile with special subwavelength hole arrays in an active area was numerically investigated by the finite-difference time-domain method. It was found that the absorption efficiency of that thermopile was enhanced when the subwavelength rectangular-hole array added extra rectangular-columnar or ellipse-columnar structures in the hole array. The simulation results show that the IAEs of the better cases for the three types of rectangular columns and three ellipse columns were increased by 14.4% and 15.2%, respectively. Such special subwavelength hole arrays can be improved by the IAE of the CMOS compatible thermopile.


Nanophotonics ◽  
2019 ◽  
Vol 8 (10) ◽  
pp. 1747-1756 ◽  
Author(s):  
Jun Gou ◽  
Hilal Cansizoglu ◽  
Cesar Bartolo-Perez ◽  
Soroush Ghandiparsi ◽  
Ahmed S. Mayet ◽  
...  

AbstractIn this paper, we present a rigorous coupled-wave analysis (RCWA) of absorption enhancement in all-silicon (Si) photodiodes with integrated hole arrays of different shapes and dimensions. The RCWA method is used to analyze the light propagation and trapping in the photodiodes on both Si-on-insulator (SOI) and bulk Si substrates for the datacom wavelength at about 850 nm. Our calculation and measurement results show that funnel-shaped holes with tapered sidewalls lead to low back-reflection. A beam of light undergoes a deflection subsequent to the diffraction in the hole array and generates laterally propagating waves. SOI substrates with oxide layers play an important role in reducing the transmission loss, especially for deflected light with higher-order diffraction from the hole array. Owing to laterally propagating modes and back-reflection on the SiO2 film, light is more confined in the thin Si layer on the SOI substrates compared to that on the bulk Si substrates. Experimental results based on fabricated devices support the predictions of the RCWA. Devices are designed with a 2-μm-thick intrinsic layer, which ensures ultrafast impulse response (full-width at half-maximum) of 30 ps. Measurements for integrated photodiodes with funnel-shaped holes indicate an enhanced external quantum efficiency of more than 55% on the SOI substrates. This represents more than 500% improvement compared to photodiodes without integrated phototrapping nanoholes.


2016 ◽  
Vol 8 (39) ◽  
pp. 26392-26399 ◽  
Author(s):  
Markus Weiler ◽  
Christoph Menzel ◽  
Thomas Pertsch ◽  
Rasoul Alaee ◽  
Carsten Rockstuhl ◽  
...  

2012 ◽  
Vol 81 ◽  
pp. 20-27
Author(s):  
David Wood ◽  
Martyn Chamberlain ◽  
Adam Baragwanath ◽  
Linzi Dodd ◽  
Carlo Hill ◽  
...  

Here we present results from key aspects of our interest in using micromachined devices in the THz region. First, our early work on making filters from rods of gold-coated SU8 is described. Pass (up to 97%) and stop bands can be observed which are theoretically underpinned by both FDTD and complex band structure simulations. Second, there is a discussion of how THz radiation passes through two-dimensional periodic arrays of subwavelength apertures. In particular, the geometry of the arrays has been studied with time-domain spectroscopy. A time-of-flight model is presented which can be used to provide insight into the operation of these arrays and has implications for the optimum design of THz plasmonic sensors. Finally, we report the THz ‘super’ extraordinary transmission properties of an optimised hybrid subwavelength aperture array, surrounded by subwavelength grooves.


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