Photoswitchable organic field-effect transistors and memory elements comprising an interfacial photochromic layer

2015 ◽  
Vol 51 (28) ◽  
pp. 6130-6132 ◽  
Author(s):  
Lyubov A. Frolova ◽  
Pavel A. Troshin ◽  
Diana K. Susarova ◽  
Alexander V. Kulikov ◽  
Nataliya A. Sanina ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Memory Devices ◽  
Electrical Characteristics ◽  
Organic Field Effect Transistors

Memory devices with superior electrical characteristics were designed using an interfacial spirooxazine layer introduced between dielectric and semiconductor layers in OFETs.

AN ORGANIC FIELD EFFECT TRANSISTORS-BASED SENSING PLATFORM FOR ENVIRONMENTAL/SECURITY APPLICATIONS

2011 ◽  
Vol 10 (04n05) ◽  
pp. 891-898 ◽  
Author(s):  
RAVISHANKAR S. DUDHE ◽  
HARSHIL N. RAVAL ◽  
ANIL KUMAR ◽  
V. RAMGOPAL RAO
Keyword(s):  
Radiation Dose ◽  
Ionizing Radiation ◽  
Organic Semiconductor ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Semiconductor Layer ◽  
Electrical Characteristics ◽  
Organic Field Effect Transistors ◽  
Γ Radiation ◽  
Semiconducting Material

Organic semiconducting material based sensors have been used for various environmental applications. Organic field effect transistors (OFETs) also find their applications in explosive vapor detection and total ionizing radiation dose determination. OFETs using poly 3-hexylthiophene (P3HT), a p-type organic semiconductor material and CuII tetraphenylporphyrin ( CuTPP ) composite as their active material were investigated as sensors for detection of various nitro-based explosive vapors with greater than parts per billion sensitivity range. Significant changes, suitable for sensor response, were observed in ON current (Ion) and transconductance (gm) extracted from electrical characteristics of the OFET after exposure to vapors of various explosive compounds. However, a similar device response was not observed to strong oxidizing agents such as benzoquinone (BQ) and benzophenone (BP). Also, the use of organic semiconducting material sensors for determining total ionizing radiation dose was studied, wherein the conductivity of the material was measured as a function of total ionizing radiation dose. An organic semiconducting material resistor was exposed to γ-radiation and it was observed that the change in resistance was proportional to the ionizing radiation dose. Changes in various parameters extracted from electrical characteristics of the OFET after γ-radiation exposure resulted in an improved sensitivity. To protect the organic semiconductor layer from the degradation in the ambient the sensors were passivated with a thin layer of silicon nitride.

scholarly journals Electrical characteristics of single-component ambipolar organic field-effect transistors and effects of air exposure on them

2008 ◽  
Vol 103 (9) ◽  
pp. 094509 ◽  
Author(s):  
Tomo Sakanoue ◽  
Masayuki Yahiro ◽  
Chihaya Adachi ◽  
Kazuo Takimiya ◽  
Akio Toshimitsu
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Single Component ◽  
Electrical Characteristics ◽  
Organic Field Effect Transistors ◽  
Air Exposure

scholarly journals Nonvolatile memory devices based on organic field-effect transistors

2011 ◽  
Vol 56 (13) ◽  
pp. 1325-1332 ◽  
Author(s):  
Hong Wang ◽  
YingQuan Peng ◽  
ZhuoYu Ji ◽  
Ming Liu ◽  
LiWei Shang ◽  
...  
Keyword(s):  
Nonvolatile Memory ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Memory Devices ◽  
Organic Field Effect Transistors ◽  
Nonvolatile Memory Devices

scholarly journals Influence of bank geometry on the electrical characteristics of printed organic field-effect transistors

2019 ◽  
Vol 4 (4) ◽  
pp. 042001
Author(s):  
Youngmin Jo ◽  
Hyunjin Park ◽  
Hyungju Ahn ◽  
Yun Ho Kim ◽  
Sungjune Jung
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Electrical Characteristics ◽  
Organic Field Effect Transistors
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