AN ORGANIC FIELD EFFECT TRANSISTORS-BASED SENSING PLATFORM FOR ENVIRONMENTAL/SECURITY APPLICATIONS

2011 ◽  
Vol 10 (04n05) ◽  
pp. 891-898 ◽  
Author(s):  
RAVISHANKAR S. DUDHE ◽  
HARSHIL N. RAVAL ◽  
ANIL KUMAR ◽  
V. RAMGOPAL RAO
Keyword(s):  
Radiation Dose ◽  
Ionizing Radiation ◽  
Organic Semiconductor ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Semiconductor Layer ◽  
Electrical Characteristics ◽  
Organic Field Effect Transistors ◽  
Γ Radiation ◽  
Semiconducting Material

Organic semiconducting material based sensors have been used for various environmental applications. Organic field effect transistors (OFETs) also find their applications in explosive vapor detection and total ionizing radiation dose determination. OFETs using poly 3-hexylthiophene (P3HT), a p-type organic semiconductor material and CuII tetraphenylporphyrin ( CuTPP ) composite as their active material were investigated as sensors for detection of various nitro-based explosive vapors with greater than parts per billion sensitivity range. Significant changes, suitable for sensor response, were observed in ON current (Ion) and transconductance (gm) extracted from electrical characteristics of the OFET after exposure to vapors of various explosive compounds. However, a similar device response was not observed to strong oxidizing agents such as benzoquinone (BQ) and benzophenone (BP). Also, the use of organic semiconducting material sensors for determining total ionizing radiation dose was studied, wherein the conductivity of the material was measured as a function of total ionizing radiation dose. An organic semiconducting material resistor was exposed to γ-radiation and it was observed that the change in resistance was proportional to the ionizing radiation dose. Changes in various parameters extracted from electrical characteristics of the OFET after γ-radiation exposure resulted in an improved sensitivity. To protect the organic semiconductor layer from the degradation in the ambient the sensors were passivated with a thin layer of silicon nitride.

scholarly journals Exploring the Critical Thickness of Organic Semiconductor Layer for Enhanced Piezoresistive Sensitivity in Field-Effect Transistor Sensors

Materials ◽  
2020 ◽  
Vol 13 (7) ◽  
pp. 1583 ◽  
Author(s):  
Damien Thuau ◽  
Katherine Begley ◽  
Rishat Dilmurat ◽  
Abduleziz Ablat ◽  
Guillaume Wantz ◽  
...  
Keyword(s):  
Organic Semiconductors ◽  
Organic Semiconductor ◽  
Field Effect ◽  
High Performance ◽  
Critical Thickness ◽  
Field Effect Transistors ◽  
Mechanical Strain ◽  
Semiconductor Layer ◽  
Organic Field Effect Transistors ◽  
P Type

Organic semiconductors (OSCs) are promising transducer materials when applied in organic field-effect transistors (OFETs) taking advantage of their electrical properties which highly depend on the morphology of the semiconducting film. In this work, the effects of OSC thickness (ranging from 5 to 15 nm) on the piezoresistive sensitivity of a high-performance p-type organic semiconductor, namely dinaphtho [2,3-b:2,3-f] thieno [3,2–b] thiophene (DNTT), were investigated. Critical thickness of 6 nm thin film DNTT, thickness corresponding to the appearance of charge carrier percolation paths in the material, was demonstrated to be highly sensitive to mechanical strain. Gauge factors (GFs) of 42 ± 5 and −31 ± 6 were measured from the variation of output currents of 6 nm thick DNTT-based OFETs engineered on top of polymer cantilevers in response to compressive and tensile strain, respectively. The relationship between the morphologies of the different thin films and their corresponding piezoresistive sensitivities was discussed.

Photoswitchable organic field-effect transistors and memory elements comprising an interfacial photochromic layer

2015 ◽  
Vol 51 (28) ◽  
pp. 6130-6132 ◽  
Author(s):  
Lyubov A. Frolova ◽  
Pavel A. Troshin ◽  
Diana K. Susarova ◽  
Alexander V. Kulikov ◽  
Nataliya A. Sanina ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Memory Devices ◽  
Electrical Characteristics ◽  
Organic Field Effect Transistors

Memory devices with superior electrical characteristics were designed using an interfacial spirooxazine layer introduced between dielectric and semiconductor layers in OFETs.

scholarly journals Bipolar transport in organic field-effect transistors: organic semiconductor blends versus contact modification

2008 ◽  
Vol 10 (6) ◽  
pp. 065006 ◽  
Author(s):  
Andreas Opitz ◽  
Michael Kraus ◽  
Markus Bronner ◽  
Julia Wagner ◽  
Wolfgang Brütting
Keyword(s):  
Organic Semiconductor ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors

scholarly journals Nanoparticles of Cu2ZnSnS4as performance enhancing additives for organic field-effect transistors

2016 ◽  
Vol 4 (22) ◽  
pp. 5109-5115 ◽  
Author(s):  
Punarja Kevin ◽  
Mohammad Azad Malik ◽  
Paul O'Brien ◽  
Joseph Cameron ◽  
Rupert G. D. Taylor ◽  
...  
Keyword(s):  
Organic Semiconductor ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Performance Enhancing

An investigation on the addition of oleylamine coated Cu2ZnSnS4nanoparticles in organic semiconductor solutions to fabricate organic field-effect transistors (OFETs).

Degradation of organic field-effect transistors made of pentacene

2004 ◽  
Vol 19 (7) ◽  
pp. 1999-2002 ◽  
Author(s):  
Ch. Pannemann ◽  
T. Diekmann ◽  
U. Hilleringmann
Keyword(s):  
Charge Carrier ◽  
Threshold Voltage ◽  
Field Effect ◽  
Gate Dielectric ◽  
Field Effect Transistors ◽  
Ambient Air ◽  
Organic Field Effect Transistors ◽  
Organic Thin Film ◽  
Field Effect Mobility ◽  
Semiconducting Material

This article reports degradation experiments on organic thin film transistors using the small organic molecule pentacene as the semiconducting material. Starting with degradation inert p-type silicon wafers as the substrate and SiO2 as the gate dielectric, we show the influence of temperature and exposure to ambient air on the charge carrier field-effect mobility, on-off-ratio, and threshold-voltage. The devices were found to have unambiguously degraded over 3 orders of magnitude in maximum on-current and charge carrier field-effect mobility, but they still operated after a period of 9 months in ambient air conditions. A thermal treatment was carried out in vacuum conditions and revealed a degradation of the charge carrier field-effect mobility, maximum on-current, and threshold voltage.

scholarly journals A Gated Four Probe Technique for Field Effect Measurements on Disordered Organic Semiconductors

2008 ◽  
Vol 63 (9) ◽  
pp. 591-595 ◽  
Author(s):  
Elizabeth von Hauff ◽  
Nicolas Spethmann ◽  
Jürgen Parisi
Keyword(s):  
Organic Semiconductors ◽  
Organic Semiconductor ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Hole Transport ◽  
Organic Field Effect Transistors ◽  
Transport Parameters ◽  
Electric Field Dependence ◽  
High Impedance ◽  
Current Voltage

A gated four probe measurement technique to isolate contact resistances in field effect measurementson disordered organic semiconductors was investigated. Organic field effect transistors (OFETs) were prepared with two additional electrodes in the contact geometry protruding into the source-drain channel to monitor the variation in potential across the channel. Two high impedance electrometers were used to determine the potential at the contacts. This technique allows to directly determine the magnitude of the parasitic contact resistances between metal contact and organic semiconductor from the drop in potential at the contact regions. The effects of contact resistances, which can falsify measurements on bulk transport parameters such as the field effect mobility, can be then eliminated during material characterization. Additionally, the temperature and electric field dependence of the contact resistances offers valuable information about the charge injection and extraction processes between metal and organic semiconductor. The effects of the four probe geometry, specifically the effect of the channel electrodes on the current-voltage characteristics, of hole transport in a polythiophene (P3HT) OFET with Au contacts were investigated and found not to influence device performance, except at currents « 1 nA. The IV characteristics were shown to follow the expected FET behaviour. From the variation in potential along the channel it was found that contact resistances at the source contact (charge injecting contact) are minimal while contact resistances at thedrain contact (charge extracting contact) are significant, resulting in a much lower effective sourcedrain voltage than that applied to the device.

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