Magneto-electronic properties of graphene nanoribbons with various edge structures passivated by phosphorus and hydrogen atoms

2015 ◽  
Vol 17 (37) ◽  
pp. 24020-24028 ◽  
Author(s):  
Z. L. Yu ◽  
D. Wang ◽  
Z. Zhu ◽  
Z. H. Zhang

Magneto-electronic properties of graphene nanoribbons with various edge structures passivated by P and H is studied. It shows that if the edge of GNRs is a mixture of zigzag edge and reconstructed Klein edge, they are nonmagnetic for H passivation but obviously magnetic for P passivation.

2016 ◽  
Vol 94 (7) ◽  
pp. 620-625 ◽  
Author(s):  
Yang-Yang Hu ◽  
Wei-Qi Li ◽  
Li Yang ◽  
Ji-Kang Feng ◽  
Wei Quan Tian

The electronic properties and second-order nonlinear optical (NLO) responses of B/N-doped zigzag graphene nanoribbon (ZGNR) have been investigated using quantum chemistry methods. The electron-deficient B atoms prefer to form π-conjugation with the C atoms nearby along the B-doped zigzag edge. On the other hand, the electron-rich N atoms with radical characteristics weaken the conjugated bonding effects in the N-doped ZGNR. The NLO response of the ZGNR is enhanced by doping only one zigzag edge with B or N atoms. The conjugated B-doped zigzag edge takes the role of electron donor, while the N-doped zigzag edge serves as electron acceptor, giving rise to the discordant impact on the second-order NLO response of the BN-doped ZGNR.


2015 ◽  
Vol 19 (18) ◽  
pp. 1850-1871 ◽  
Author(s):  
Eleftherios K. Pefkianakis ◽  
Georgios Sakellariou ◽  
Georgios C. Vougioukalakis

Author(s):  
Jose Eduardo Barcelon ◽  
Marco Smerieri ◽  
Giovanni Carraro ◽  
Pawel Wojciechowski ◽  
Luca Vattuone ◽  
...  

Graphene nanoribbons (GNRs) are at the frontier of research on graphene materials since the 1D quantum confinement of electrons allows for the opening of an energy gap.


1998 ◽  
Vol 538 ◽  
Author(s):  
J. F. Justo ◽  
F. De Brito Mota ◽  
A. Fazziom

AbstractWe combined empirical and ab initio methods to study structural and electronic properties of amorphous silicon nitride. For such study, we developed an interatomic potential to describe the interactions between silicon, nitrogen, and hydrogen atoms. Using this potential, we performed Monte Carlo simulations in a simulated annealing scheme to study structural properties of amorphous silicon nitride. Then this potential was used to generate relevant structures of a-SiNx:Hy which were input configurations to ab initio calculations. We investigated the electronic and structural role played by hydrogen incorporation in amorphous silicon nitride.


2021 ◽  
Vol 28 (1) ◽  
Author(s):  
Santiago José Guevara-Martínez ◽  
Francisco Villanueva-Mejia ◽  
Luis Olmos ◽  
Pedro Navarro-Santos ◽  
Manuel Arroyo-Albiter

2017 ◽  
Vol 121 (10) ◽  
pp. 5836-5840 ◽  
Author(s):  
Juliana A. Gonçalves ◽  
Regiane Nascimento ◽  
Matheus J. S. Matos ◽  
Alan B. de Oliveira ◽  
Hélio Chacham ◽  
...  

2015 ◽  
Vol 17 (1) ◽  
pp. 638-643 ◽  
Author(s):  
G. P. Tang ◽  
Z. H. Zhang ◽  
X. Q. Deng ◽  
Z. Q. Fan ◽  
H. L. Zhu

The spin-dependent electronic properties of zigzag-edged graphene nanoribbons with a line defect are investigated systematically and compared to those of the pristine ZGNR.


Sign in / Sign up

Export Citation Format

Share Document