Resistive switching in diamondoid thin films
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Abstract The electrical transport properties of a thin film of the diamondoid adamantane, deposited on an Au/W substrate, were investigated experimentally. The current I, in applied potential V, from the admantane-thiol/metal heterstructure to a wire lead on its surface exhibited non-symmetric (diode-like) characteristics and a signature of resistive switching (RS), an effect that is valuable to non-volatile memory applications. I(V) follows a hysteresis curve that passes twice through $$I(0)=0$$ I ( 0 ) = 0 linearly, indicating RS between two states with significantly different conductances, possibly due to an exotic mechanism.
2006 ◽
Vol 21
(12)
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pp. 1522-1526
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2016 ◽
Vol 27
(5)
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pp. 5114-5120
2019 ◽
Vol 256
(5)
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pp. 1800735
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1988 ◽
Vol 23
(3)
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pp. 1002-1008
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2000 ◽
Vol 115
(4)
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pp. 201-205
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