scholarly journals The role of interparticle heterogeneities in the selenization pathway of Cu–Zn–Sn–S nanoparticle thin films: a real-time study

2015 ◽  
Vol 3 (27) ◽  
pp. 7128-7134 ◽  
Author(s):  
Nathaniel J. Carter ◽  
Roland Mainz ◽  
Bryce C. Walker ◽  
Charles J. Hages ◽  
Justus Just ◽  
...  
Keyword(s):  
Thin Films ◽  
Real Time ◽  
Time Study

Small (∼5 nm), Cu- and Sn-rich nanoparticles play a key role in initiating the growth of micrometer-sized Cu2ZnSn(S,Se)4 grains.

scholarly journals Real‐Time Study on Structure Formation and the Intercalation Process of Polymer: Fullerene Bulk Heterojunction Thin Films

Solar RRL ◽  
2020 ◽  
Vol 4 (3) ◽  
pp. 2070035
Author(s):  
Thaer Kassar ◽  
Marvin Berlinghof ◽  
Nusret Sena Güldal ◽  
Tilo Schmutzler ◽  
Federico Zontone ◽  
...  
Keyword(s):  
Thin Films ◽  
Real Time ◽  
Structure Formation ◽  
Bulk Heterojunction ◽  
Time Study ◽  
Intercalation Process

Real-time study of Ga diffusion processes during the formation of Cu(In,Ga)Se2: The role of Cu and Na content

2013 ◽  
Vol 116 ◽  
pp. 102-109 ◽  
Author(s):  
H. Rodriguez-Alvarez ◽  
R. Mainz ◽  
R. Caballero ◽  
D. Abou-Ras ◽  
M. Klaus ◽  
...  
Keyword(s):  
Real Time ◽  
Diffusion Processes ◽  
Time Study

scholarly journals Real-time study of local order in thin films by grazing-incidence total scattering and pair distribution function analysis

2019 ◽  
Vol 75 (a1) ◽  
pp. a99-a99
Author(s):  
Ann-Christin Dippel ◽  
Martin Roelsgaard ◽  
Bo B. Iversen ◽  
Olof Gutowski ◽  
Martin v. Zimmermann ◽  
...  
Keyword(s):  
Thin Films ◽  
Distribution Function ◽  
Real Time ◽  
Pair Distribution Function ◽  
Function Analysis ◽  
Grazing Incidence ◽  
Local Order ◽  
Time Study ◽  
Total Scattering

scholarly journals Real‐Time Study on Structure Formation and the Intercalation Process of Polymer: Fullerene Bulk Heterojunction Thin Films

Solar RRL ◽  
2020 ◽  
Vol 4 (3) ◽  
pp. 1900508 ◽  
Author(s):  
Thaer Kassar ◽  
Marvin Berlinghof ◽  
Nusret Sena Güldal ◽  
Tilo Schmutzler ◽  
Federico Zontone ◽  
...  
Keyword(s):  
Thin Films ◽  
Real Time ◽  
Structure Formation ◽  
Bulk Heterojunction ◽  
Time Study ◽  
Intercalation Process

Real-time study of phase transformations in Cu–In chalcogenide thin films using in situ Raman spectroscopy and XRD

2005 ◽  
Vol 66 (11) ◽  
pp. 1954-1960 ◽  
Author(s):  
E. Rudigier ◽  
J. Djordjevic ◽  
C. von Klopmann ◽  
B. Barcones ◽  
A. Pérez-Rodríguez ◽  
...  
Keyword(s):  
Thin Films ◽  
Raman Spectroscopy ◽  
Phase Transformations ◽  
Real Time ◽  
Time Study ◽  
In Situ Raman Spectroscopy ◽  
In Situ Raman ◽  
Chalcogenide Thin Films

Real-time study of oxygen in c-axis oriented YBa2Cu3O7−δ thin films using in situ spectroscopic ellipsometry

1999 ◽  
Vol 86 (12) ◽  
pp. 6979-6984 ◽  
Author(s):  
Y. Gao ◽  
A. H. Mueller ◽  
E. A. Irene ◽  
O. Auciello ◽  
A. R. Krauss ◽  
...  
Keyword(s):  
Thin Films ◽  
Real Time ◽  
Spectroscopic Ellipsometry ◽  
Time Study

The study of interfacial reactions of nickel thin films on GaAs

1983 ◽  
Vol 41 ◽  
pp. 156-157
Author(s):  
L.J. Chen ◽  
Y.F. Hsieh
Keyword(s):  
Thin Films ◽  
Integrated Circuits ◽  
Interfacial Reactions ◽  
Metal Contacts ◽  
Nickel Thin Films ◽  
Thin Foils ◽  
The Status ◽  
Si Doped ◽  
Electron Microscopes

One measure of the maturity of a device technology is the ease and reliability of applying contact metallurgy. Compared to metal contact of silicon, the status of GaAs metallization is still at its primitive stage. With the advent of GaAs MESFET and integrated circuits, very stringent requirements were placed on their metal contacts. During the past few years, extensive researches have been conducted in the area of Au-Ge-Ni in order to lower contact resistances and improve uniformity. In this paper, we report the results of TEM study of interfacial reactions between Ni and GaAs as part of the attempt to understand the role of nickel in Au-Ge-Ni contact of GaAs.N-type, Si-doped, (001) oriented GaAs wafers, 15 mil in thickness, were grown by gradient-freeze method. Nickel thin films, 300Å in thickness, were e-gun deposited on GaAs wafers. The samples were then annealed in dry N2 in a 3-zone diffusion furnace at temperatures 200°C - 600°C for 5-180 minutes. Thin foils for TEM examinations were prepared by chemical polishing from the GaA.s side. TEM investigations were performed with JE0L- 100B and JE0L-200CX electron microscopes.

Transmission Electron Microscopy studies of texture of Cr underlayer of magnetic recording hard disk

1991 ◽  
Vol 49 ◽  
pp. 580-581
Author(s):  
L. Tang ◽  
G. Thomas ◽  
M. R. Khan ◽  
S. L. Duan
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Magnetic Recording ◽  
Magnetic Thin Films ◽  
Magnetic Films ◽  
Substrate Bias ◽  
Epitaxial Relationship ◽  
Transmission Electron

Cr thin films are often used as underlayers for Co alloy magnetic thin films, such as Co1, CoNi2, and CoNiCr3, for high density longitudinal magnetic recording. It is belived that the role of the Cr underlayer is to control the growth and texture of the Co alloy magnetic thin films, and, then, to increase the in plane coercivity of the films. Although many epitaxial relationship between the Cr underlayer and the magnetic films, such as ﹛1010﹜Co/ {110﹜Cr4, ﹛2110﹜Co/ ﹛001﹜Cr5, ﹛0002﹜Co/﹛110﹜Cr6, have been suggested and appear to be related to the Cr thickness, the texture of the Cr underlayer itself is still not understood very well. In this study, the texture of a 2000 Å thick Cr underlayer on Nip/Al substrate for thin films of (Co75Ni25)1-xTix dc-sputtered with - 200 V substrate bias is investigated by electron microscopy.

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