Ferromagnetism properties of Er-doped ZnO: a GGA + U study

Our first-principles calculation finds that only the Zn vacancy can induce a 1.0 μB magnetic moment in Er-doped ZnO, which comes from the unpaired 2p electrons at the ligand O atom and results in the room-temperature ferromagnetism property of ZnO.

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Zn vacancy induced ferromagnetism in K doped ZnO

Journal of Materials Chemistry C ◽

10.1039/c5tc02936h ◽

2015 ◽

Vol 3 (45) ◽

pp. 11953-11958 ◽

Cited By ~ 26

Author(s):

Yiren Wang ◽

Jingyuan Piao ◽

Guozhong Xing ◽

Yunhao Lu ◽

Zhimin Ao ◽

...

Keyword(s):

Room Temperature ◽

Lattice Distortion ◽

Room Temperature Ferromagnetism ◽

Experimental Studies ◽

Defect Complex ◽

Doped Zno ◽

Zn Vacancy

K doped ZnO shows room temperature ferromagnetism from both theoretical and experimental studies. This ferromagnetism is mainly attributed to the formation of the Zn vacancy. The K dopants can stabilize the Zn vacancy by forming a defect complex and K substitution can induce magnetism via lattice distortion.

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Room-temperature ferromagnetism in Er-doped ZnO thin films

Scripta Materialia ◽

10.1016/j.scriptamat.2008.10.015 ◽

2009 ◽

Vol 60 (5) ◽

pp. 289-292 ◽

Cited By ~ 46

Author(s):

J QI ◽

Y YANG ◽

L ZHANG ◽

J CHI ◽

D GAO ◽

...

Keyword(s):

Thin Films ◽

Room Temperature ◽

Room Temperature Ferromagnetism ◽

Zno Thin Films ◽

Doped Zno ◽

Er Doped

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INTRINSIC ROOM TEMPERATURE FERROMAGNETISM OF SILICON-DOPED ZnO THIN FILMS

Modern Physics Letters B ◽

10.1142/s0217984913500929 ◽

2013 ◽

Vol 27 (13) ◽

pp. 1350092 ◽

Cited By ~ 1

Author(s):

M. HASSAN FAROOQ ◽

X. G. XU ◽

H. L. YANG ◽

C. J. RAN ◽

Y. K. WANG ◽

...

Keyword(s):

Thin Films ◽

Room Temperature ◽

Room Temperature Ferromagnetism ◽

Magnetic Moments ◽

First Principles Calculation ◽

Zno Thin Films ◽

Si Doped ◽

Doped Zno ◽

Unpaired Electrons ◽

Silicon Doped

We report our study on the magnetic properties of Si -doped ZnO thin films fabricated by pulsed laser deposition technique. The Si -doped ZnO thin films show ferromagnetism at room temperature. The saturation magnetism increases from 0 to 2.4 emu/cc with the increasing of Si concentration up to 2%, and then decreases with further increasing of Si concentration. First-principles calculation demonstrates that the origination of ferromagnetism for Si -doped ZnO system is the two unpaired electrons of Si -2p. These unpaired electrons increase the magnetic moments which are responsible for the increasing ferromagnetism.

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Room-temperature ferromagnetism induced by Na co-doping and K co-doping in the rare earth Er doped ZnO nanocrystallites

Journal of Alloys and Compounds ◽

10.1016/j.jallcom.2014.06.146 ◽

2014 ◽

Vol 615 ◽

pp. 4-11 ◽

Cited By ~ 11

Author(s):

J. Sivasankari ◽

S. Sankar ◽

S. Selvakumar ◽

K. Sivaji

Keyword(s):

Rare Earth ◽

Room Temperature ◽

Room Temperature Ferromagnetism ◽

Co Doping ◽

Doped Zno ◽

Er Doped ◽

The Rare Earth

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SUBTLE INTERPLAY BETWEEN HYDROGEN AND MAGNETISM IN Co DOPED ZnO

International Journal of Computational Materials Science and Engineering ◽

10.1142/s2047684112500017 ◽

2012 ◽

Vol 01 (01) ◽

pp. 1250001

Author(s):

Y. B. ZHANG ◽

M. H. N. ASSADI ◽

S. LI

Keyword(s):

Magnetic Properties ◽

Point Defect ◽

First Principles ◽

Density Functional Calculations ◽

Density Functional ◽

Room Temperature ◽

Room Temperature Ferromagnetism ◽

Strong Tendency ◽

Doped Zno ◽

Co Doped

The effects of hydrogen, either interstitial (HI) or substitutional (Ho), on magnetic properties of Co doped ZnO (ZnO:Co) have been systematically investigated using first-principles density functional calculations. The study discovers the correlation between the distribution of Co ions and the hydrogen point defect and magnetism. It is found that Co ions and hydrogen have a strong tendency toward aggregation and hydrogen mainly contributes to the room temperature ferromagnetism observed experimentally in ZnO:Co . Furthermore, in ZnO:Co , the formation of Ho with four-fold hydrogenic bonds is favored over HI by 0.4 eV.

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