High-performance CuFe2O4 epitaxial thin films with enhanced ferromagnetic resonance properties

RSC Advances ◽  
2016 ◽  
Vol 6 (102) ◽  
pp. 100108-100114 ◽  
Author(s):  
Ruyi Zhang ◽  
Ming Liu ◽  
Lu Lu ◽  
Shao-Bo Mi ◽  
Chun-Lin Jia ◽  
...  
Keyword(s):  
Thin Films ◽  
Ferromagnetic Resonance ◽  
High Performance ◽  
Bulk Material ◽  
Epitaxial Films ◽  
Epitaxial Thin Films ◽  
Resonance Properties ◽  
First Time

CuFe2O4 epitaxial films with superior FMR properties compared with bulk material have been successfully fabricated for the first time.

scholarly journals Chemical solution synthesis and ferromagnetic resonance of epitaxial thin films of yttrium iron garnet

2017 ◽  
Vol 1 (7) ◽  
Author(s):  
Irene Lucas ◽  
Pilar Jiménez-Cavero ◽  
J. M. Vila-Fungueiriño ◽  
Cesar Magén ◽  
Soraya Sangiao ◽  
...  
Keyword(s):  
Thin Films ◽  
Ferromagnetic Resonance ◽  
Yttrium Iron Garnet ◽  
Epitaxial Thin Films ◽  
Chemical Solution ◽  
Solution Synthesis ◽  
Yttrium Iron ◽  
Iron Garnet

Ferromagnetic resonance in double perovskite epitaxial thin films of La2NiMnO6 on SrTiO3 and NdGaO3 substrates

2010 ◽  
Vol 97 (7) ◽  
pp. 072511 ◽  
Author(s):  
S. Kazan ◽  
F. A. Mikailzade ◽  
M. Özdemir ◽  
B. Aktaş ◽  
B. Rameev ◽  
...  
Keyword(s):  
Thin Films ◽  
Ferromagnetic Resonance ◽  
Double Perovskite ◽  
Epitaxial Thin Films

scholarly journals Direct Comparison of Structural and Electrical Properties of Epitaxial (001)-, (116)-, and (103)-Oriented SrBi2Ta2O9 Thin Films on SrTiO3 and Silicon Substrates

2000 ◽  
Vol 655 ◽  
Author(s):  
H. N. Lee ◽  
A. Pignolet ◽  
S. Senz ◽  
C. Harnagea ◽  
D. Hesse
Keyword(s):  
Thin Films ◽  
Remanent Polarization ◽  
Bottom Electrode ◽  
Three Dimensional ◽  
Laser Deposition ◽  
Layered Perovskite ◽  
Silicon Substrates ◽  
Epitaxial Thin Films ◽  
Structural And Electrical Properties ◽  
First Time

AbstractAnisotropies of the properties of the bismuth-layered perovskite SrBi2Ta2O9 (SBT) have been investigated using epitaxial thin films grown by pulsed laser deposition both on conducting Nb-doped SrTiO3 (STO) single crystal substrates and on Si(100) substrates. It has been found that the three-dimensional epitaxy relationship SBT(001)∥STO(001); SBT [110] ∥STO[100] can be applied to all SBT thin films on STO substrates of (001), (011), and (111) orientations. An about 1.7 times larger remanent polarization was obtained in (103)-oriented SBT films than in that of (116) orientation, while the (001)-oriented SBT films revealed no ferroelectricity along their c-axis. Non-c-axis-oriented SBT films with a well-defined (116) orientation were also grown on silicon substrates for the first time. They were deposited on Si(100) covered with a conducting SrRuO3 (110) bottom electrode on a YSZ(100) buffer layer.

A new method for fabricating high performance polymeric thin films by chemical vapor polymerization

1996 ◽  
Vol 11 (7) ◽  
pp. 1842-1850 ◽  
Author(s):  
Justin F. Gaynor ◽  
J. Jay Senkevich ◽  
Seshu B. Desu
Keyword(s):  
Thin Films ◽  
High Performance ◽  
Chemical Vapor ◽  
Polymeric Thin Films ◽  
Copolymer Films ◽  
Initiation Reaction ◽  
First Time ◽  
Rate Limiting ◽  
Vacuum Deposition Method ◽  
General Method

A vacuum deposition method is presented in which copolymer films are grown from a vinylic monomer chosen for desirable properties and paraxylylene. The concentration of paraxylylene in the final copolymer can be negligibly small if proper deposition conditions, presented here for the first time, are employed. Films of paraxylylene with N-phenyl maleimide deposited at 40 °C, for example, showed thermal stability and FTIR spectra nearly identical with homopolymers of poly(N-phenyl maleimide). Different rate-limiting steps are proposed to explain film composition; paraxylylene is under surface reaction control, while the comonomer obeys mass flow control. This results in a deposition environment extremely rich in comonomer. Growth rates and compositions were consistent with predictions. The initiation reaction did not appear different from homopolymerization of paraxylylene. The general method presented here allows fabrication of vapor-deposited thin films with properties limited primarily by the comonomer employed.

Structural and Magnetotransport Properties of Coherently Strained La2/3Ca1/3MnO3 Epitaxial Thin Films

2006 ◽  
Vol 52 ◽  
pp. 81-86
Author(s):  
LI. Abad ◽  
V. Laukhin ◽  
S. Valencia ◽  
M. Varela ◽  
Ll. Balcells ◽  
...  
Keyword(s):  
Thin Films ◽  
Annealing Temperature ◽  
Magnetic Transition ◽  
Epitaxial Films ◽  
Epitaxial Thin Films ◽  
Bulk Materials ◽  
Magnetic Transition Temperature ◽  
Cell Parameters ◽  
Saturation Magnetisation ◽  
Very High

Magnetotransport properties of very high quality fully strained epitaxial thin films of La2/3Ca1/3MnO3 (LCMO), grown on top of SrTiO3 (STO) (001) substrates, are analyzed. As-grown fully strained epitaxial films are ferromagnetic and metallic but exhibit depressed transport and magnetic properties (low TC and MS). Detailed analysis of the structural and magnetotransport properties after high temperature annealing processes, have revealed a progressive structural relaxation, as detected by the variation of the c/a tetragonal distortion, as the annealing temperature rises up. Nevertheless, no changes in the in-plane cell parameters are observed. Simultaneously, the magnetic transition temperature, TC, and saturation magnetisation, MS, substantially increase approaching values similar to that of bulk materials.

Ferromagnetic resonance properties and anisotropy of Ni-Mn-Ga thin films of different thicknesses deposited on Si substrate

2009 ◽  
Vol 105 (7) ◽  
pp. 07A942 ◽  
Author(s):  
Vladimir Golub ◽  
K. M. Reddy ◽  
Volodymyr Chernenko ◽  
Peter Müllner ◽  
Alex Punnoose ◽  
...  
Keyword(s):  
Thin Films ◽  
Ferromagnetic Resonance ◽  
Si Substrate ◽  
Resonance Properties

scholarly journals Deep-Level Traps Responsible for Persistent Photocurrent in Pulsed-Laser-Deposited β-Ga2O3 Thin Films

Crystals ◽  
2021 ◽  
Vol 11 (9) ◽  
pp. 1046
Author(s):  
Bhera Ram Tak ◽  
Ming-Min Yang ◽  
Marin Alexe ◽  
Rajendra Singh
Keyword(s):  
Thin Films ◽  
High Performance ◽  
Deep Level ◽  
Electronic Devices ◽  
Pulsed Laser ◽  
Epitaxial Films ◽  
Wide Bandgap ◽  
Trap Level ◽  
Characteristic Peak ◽  
Deep Ultraviolet

Gallium oxide (β-Ga2O3) is emerging as a promising wide-bandgap semiconductor for optoelectronic and high-power electronic devices. In this study, deep-level defects were investigated in pulsed-laser-deposited epitaxial films of β-Ga2O3. A deep ultraviolet photodetector (DUV) fabricated on β-Ga2O3 film showed a slow decay time of 1.58 s after switching off 250 nm wavelength illumination. Generally, β-Ga2O3 possesses various intentional and unintentional trap levels. Herein, these traps were investigated using the fractional emptying thermally stimulated current (TSC) method in the temperature range of 85 to 473 K. Broad peaks in the net TSC curve were observed and further resolved to identify the characteristic peak temperature of individual traps using the fractional emptying method. Several deep-level traps having activation energies in the range of 0.16 to 1.03 eV were identified. Among them, the trap with activation energy of 1.03 eV was found to be the most dominant trap level and it was possibly responsible for the persistent photocurrent in PLD-grown β-Ga2O3 thin films. The findings of this current work could pave the way for fabrication of high-performance DUV photodetectors.

Interfacial Adhesion of Nanoporous Zeolite Thin Films

Materials ◽  
2004 ◽  
Author(s):  
Lili Hu ◽  
Junlan Wang ◽  
Zijian Li ◽  
Shuang Li ◽  
Yushan Yan
Keyword(s):  
Thin Films ◽  
Interfacial Adhesion ◽  
High Performance ◽  
Interfacial Strength ◽  
Synthesis Process ◽  
Seeded Growth ◽  
Thermal Methods ◽  
Laser Spallation ◽  
First Time ◽  
Low K

Nanoporous zeolite thin films are promising candidates as future low-k materials. During the integration with other semiconducting materials, the high stresses resulted from the synthesis process can cause the film to fracture or delaminate from the substrates. Evaluating the interfacial adhesion of zeolite thin films is very important in achieving high performance low-k materials. In this work, laser spallation technique is utilized to investigate the interfacial strength of zeolite thin films from three different synthesis processes. The preliminary results show that the fully crystalline zeolite thin films from hydro-thermal in-situ and seeded growth methods have a stronger interface than that from the spin-on process. Effort is also being made to compare the interfacial strength of the zeolite films between the two hydro-thermal methods. This is the first time that the interfacial strength of zeolite thin films is quantitatively evaluated. The results have great significance in the future applications of low-k zeolite thin films.

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