scholarly journals Direct Comparison of Structural and Electrical Properties of Epitaxial (001)-, (116)-, and (103)-Oriented SrBi2Ta2O9 Thin Films on SrTiO3 and Silicon Substrates

2000 ◽  
Vol 655 ◽  
Author(s):  
H. N. Lee ◽  
A. Pignolet ◽  
S. Senz ◽  
C. Harnagea ◽  
D. Hesse

AbstractAnisotropies of the properties of the bismuth-layered perovskite SrBi2Ta2O9 (SBT) have been investigated using epitaxial thin films grown by pulsed laser deposition both on conducting Nb-doped SrTiO3 (STO) single crystal substrates and on Si(100) substrates. It has been found that the three-dimensional epitaxy relationship SBT(001)∥STO(001); SBT [110] ∥STO[100] can be applied to all SBT thin films on STO substrates of (001), (011), and (111) orientations. An about 1.7 times larger remanent polarization was obtained in (103)-oriented SBT films than in that of (116) orientation, while the (001)-oriented SBT films revealed no ferroelectricity along their c-axis. Non-c-axis-oriented SBT films with a well-defined (116) orientation were also grown on silicon substrates for the first time. They were deposited on Si(100) covered with a conducting SrRuO3 (110) bottom electrode on a YSZ(100) buffer layer.

CrystEngComm ◽  
2018 ◽  
Vol 20 (34) ◽  
pp. 5012-5016 ◽  
Author(s):  
Tomoya Onozuka ◽  
Akira Chikamatsu ◽  
Yasushi Hirose ◽  
Tetsuya Hasegawa

Herein, we investigated the domain morphologies of defect-perovskite LaCuOx (2.5 ≤ x ≤ 3.0) thin films grown on cubic SrTiO3 (100) and orthorhombic NdGaO3 (110) substrates by pulsed-laser deposition.


2003 ◽  
Vol 18 (1) ◽  
pp. 111-114 ◽  
Author(s):  
Walter M. Gilmore ◽  
Soma Chattopadhyay ◽  
Alex Kvit ◽  
A. K. Sharma ◽  
C. B. Lee ◽  
...  

Epitaxial thin films of PbZr0.52Ti0.48O3 (PZT) were synthesized successfully on SrRuO3/SrTiO3/MgO/TiN/Si heterostructures by pulsed laser deposition. The films were single phase and had (001) orientation. The deposition parameters were varied to obtain the best epitaxial layer for each of the compounds. Transmission electron microscopy indicated good epitaxy for the entire heterostructure and sharp interfaces between the epilayers. Dielectric and P–E hysteresis loop measurements were carried out with evaporated Ag electrodes. The dielectric constant for the films was found to be between 400–450. The value of saturation polarization Ps was between 55–60 μC/cm2, and the coercive field Ec varied from 60–70 kV/cm. Integration of PZT films with silicon will be useful for future memory and micromechanical devices.


2021 ◽  
pp. 126323
Author(s):  
Joseph A. De Mesa ◽  
Angelo P. Rillera ◽  
Melvin John F. Empizo ◽  
Nobuhiko Sarukura ◽  
Roland V. Sarmago ◽  
...  

2005 ◽  
Vol 133 (10) ◽  
pp. 641-645 ◽  
Author(s):  
Yimin Cui ◽  
Chunchang Wang ◽  
Bisong Cao

2014 ◽  
Vol 633 ◽  
pp. 378-381
Author(s):  
Bei Li ◽  
X.B. Liu ◽  
M. Chen ◽  
X.A. Mei

Dy-doped Bi4Ti3O12 thin films were fabricated on Pt/Ti/SiO2/Si substrates by pulsed laser deposition technique, and the structures and electrical properties of the films were investigated. XRD results indicated that all of Bi4-xDyxTi3O12 films consisted of single phase of a bismuth-layered structure with well-developed rod-like grains. The remanent polarization ( Pr ) and coercive field (Ec) of the Bi4-xDyxTi3O12 Film with x=0.75 were 25μC/cm2 and 85KV/cm , respectively.


2004 ◽  
Vol 201 (10) ◽  
pp. 2385-2389 ◽  
Author(s):  
Yanwei Ma ◽  
M. Guilloux-Viry ◽  
O. Pena ◽  
C. Moure

2020 ◽  
Vol 8 (38) ◽  
pp. 19975-19983
Author(s):  
Arindom Chatterjee ◽  
Emigdio Chavez-Angel ◽  
Belén Ballesteros ◽  
José Manuel Caicedo ◽  
Jessica Padilla-Pantoja ◽  
...  

Oxygen stoichiometry in epitaxial GdBaCo2O5.5±δ films accommodates the strain, which substantially affects thermoelectric properties, bringing the material from p-type (tensile strain c⊥-oriented on STO) to n-type thermopower (compressive b⊥ on LAO).


2005 ◽  
Vol 491 (1-2) ◽  
pp. 249-252 ◽  
Author(s):  
Xinhai Han ◽  
Guanzhong Wang ◽  
Jiansheng Jie ◽  
Xuelian Zhu ◽  
J.G. Hou

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