Effects of Annealing Temperature on Resistance Switching Properties of ZnMn2O4 Films Deposited by Magnetron Sputtering

2015 ◽  
Vol 778 ◽  
pp. 88-91
Author(s):  
Hua Wang ◽  
Zhi Da Li ◽  
Ji Wen Xu ◽  
Yu Pei Zhang ◽  
Ling Yang
Keyword(s):  
Magnetron Sputtering ◽  
Resistive Switching ◽  
Spinel Structure ◽  
Annealing Temperature ◽  
Resistance Switching ◽  
Switching Behavior ◽  
Si Substrate ◽  
Resistive Switching Behavior ◽  
Bipolar Resistive Switching

ZnMn2O4films were fabricated on p-Si substrate by magnetron sputtering. The effects of annealing temperature on microstructure, resistance switching properties and endurance characteristics of ZnMn2O4films were investigated. The ZnMn2O4films with a structure of Ag/ZnMn2O4/p-Si exhibit bipolar resistive switching behavior. The results indicated that the annealing temperature has not changed its spinel structure, the bipolar resistance behavior and endurance characteristics, but the grain become more and more large, arranged closed and distributed evenly with the increase of annealing temperature from 450°C to 750°C. The ZnMn2O4films annealed at 600°C have the biggestRHRS/RLRSratio, the lowestVONandVOFF. TheRHRS/RLRSratios of all specimens maintain at about 103after successive 1000 switching cycles, which indicated that the Ag/ZnMn2O4/p-Si device has better endurance characteristics.

Effects of Thickness on Resistance Switching Properties of ZnMn2O4 Films Deposited by Magnetron Sputtering

2014 ◽  
Vol 941-944 ◽  
pp. 1275-1278
Author(s):  
Hua Wang ◽  
Zhi Da Li ◽  
Ji Wen Xu ◽  
Yu Pei Zhang ◽  
Ling Yang ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Random Access ◽  
Random Access Memory ◽  
Resistance Switching ◽  
Switching Behavior ◽  
Si Substrate ◽  
Access Memory ◽  
Resistive Switching Behavior ◽  
Bipolar Resistive Switching ◽  
Resistance Random Access Memory

ZnMn2O4films for resistance random access memory (RRAM) were fabricated on p-Si substrate by magnetron sputtering. The effects of thickness onI-Vcharacteristics, resistance switching behavior and endurance characteristics of ZnMn2O4films were investigated. The ZnMn2O4films with a structure of Ag/ZnMn2O4/p-Si exhibit bipolar resistive switching behavior. With the increase of thickness of ZnMn2O4films from 0.83μm to 2.3μm, both theVONand the number of stable repetition switching cycle increase, but theRHRS/RLRSratio decrease, which indicated that the ZnMn2O4films with a thickness of 0.83μm has the biggestRHRS/RLRSratio and the lowestVONandVOFF, but the worst endurance characteristics.

scholarly journals Effects of the thickness on resistive switching characteristics of CrOx thin films

2016 ◽  
Vol 19 (2) ◽  
pp. 92-100
Author(s):  
Ngoc Kim Pham ◽  
Thang Bach Phan ◽  
Vinh Cao Tran
Keyword(s):  
Thin Films ◽  
Surface Morphology ◽  
Resistive Switching ◽  
High Reliability ◽  
Switching Behavior ◽  
Ftir Analysis ◽  
Resistive Switching Behavior ◽  
Bipolar Resistive Switching ◽  
Structure Surface ◽  
Switching Characteristics

In this study, we have investigated influences of the thickness on the structure, surface morphology and resistive switching characteristics of CrOx thin films prepared by using DC reactive sputtering technique. The Raman and FTIR analysis revealed that multiphases including Cr2O3, CrO2, Cr8O21... phases coexist in the microstructure of CrOx film. It is noticed that the amount of stoichiometric Cr2O3 phase increased significantly as well as the surface morphology were more visible with less voids and more densed particles with larger thickness films. The Ag/CrOx/FTO devices exhibited bipolar resistive switching behavior and high reliability. The resistive switching ratio has decreased slightly with the thickness increments and was best achieved at CrOx – 100 nm devices.

Ferroelectric resistance switching in Pt/Fe/BiFeO3/SrRuO3/SrTiO3 heterostructures

2020 ◽  
Vol 22 (23) ◽  
pp. 13277-13284
Author(s):  
Wanchao Zheng ◽  
Yuchen Wang ◽  
Chao Jin ◽  
Ruihua Yin ◽  
Dong Li ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Resistance Switching ◽  
Depletion Layer ◽  
Switching Behavior ◽  
Ferroelectric Polarization ◽  
Resistive Switching Behavior ◽  
Layer Width ◽  
Depletion Layer Width

The resistive switching behavior in the Pt/Fe/BiFeO3/SrRuO3 heterostructures was observed. It results from the ferroelectric polarization modulated the depletion layer width around the BiFeO3/SrRuO3 interface.

The Resistive Switching Behavior of ZnO Films Depending on Li Dopant Concentration and Electrode Materials

2016 ◽  
Vol 99 ◽  
pp. 75-80
Author(s):  
Arsen Igityan ◽  
Yevgenia Kafadaryan ◽  
Natella Aghamalyan ◽  
Silva Petrosyan
Keyword(s):  
Resistive Switching ◽  
Electrode Materials ◽  
Switching Behavior ◽  
Zno Films ◽  
Lithium Content ◽  
Resistive Switching Behavior ◽  
Bipolar Resistive Switching ◽  
Glass Substrates ◽  
Ohmic Behavior ◽  
Doped Zno

Lithium (0, 1.0 and 10 at.%)-doped ZnO (LiZnO) polycrystalline thin films were deposited on Pt/SiO2, LaB6/Al2O3, Au/SiO2 and 20 at.% fluorine-doped SnO2(FTO)/glass substrates by an e-beam evaporation method. Metal/LiZnO/Metal sandwich structures were constructed by depositing different top electrodes (Ag, Al and Au) to find memristive characteristics depending on the lithium content and electrode materials. Compared with undoped and 1%Li-doped ZnO devices, the 10 at.%Li-doped ZnO (10LiZnO) device exhibits resistive switching memory. The Ag/10LiZnO/Pt and Ag/10LiZnO/LaB6 memory devices exhibit unipolar resistive switching behavior while bipolar resistive switching in Ag/10LiZnO/FTO, Au/10LiZnO/FTO and Al/10LiZnO/LaB6 structures is revealed. The dominant conduction mechanisms are explained in terms of Ohmic behavior, space charge limited current (SCLC) and Schottky emission for the URS and BRS behaviors.

scholarly journals Resistive Switching Behavior of Magnesium Zirconia Nickel Nanorods

Materials ◽  
2020 ◽  
Vol 13 (12) ◽  
pp. 2755
Author(s):  
Tzu-Han Su ◽  
Ke-Jing Lee ◽  
Li-Wen Wang ◽  
Yu-Chi Chang ◽  
Yeong-Her Wang
Keyword(s):  
Thin Film ◽  
Resistive Switching ◽  
Sol Gel ◽  
Switching Behavior ◽  
Resistive Memory ◽  
Scanning Electron Microscope Image ◽  
Resistive Switching Behavior ◽  
Bipolar Resistive Switching ◽  
Electron Microscope Image ◽  
Scanning Electron

To effectively improve the uniformity of switching behavior in resistive switching devices, this study developed magnesium zirconia nickel (MZN) nanorods grown on ITO electrodes through hydrothermal method. The field emission scanning electron microscope image shows the NR formation. Al/MZN NR/ITO structure exhibits forming-free and bipolar resistive switching behaviors. MZN NRs have relatively higher ON/OFF ratio and better uniformity compared with MZN thin film. The superior properties of MZN NRs can be attributed to its distinct geometry, which leads to the formation of straight and extensible conducting filaments along the direction of MZN NR. The results suggest the possibility of developing sol–gel NR-based resistive memory devices.

Bipolar resistive switching behavior and conduction mechanisms of composite nanostructured TiO2/ZrO2 thin film

2020 ◽  
Vol 46 (13) ◽  
pp. 21196-21201 ◽  
Author(s):  
Hui-Chuan Liu ◽  
Xin-Gui Tang ◽  
Qiu-Xiang Liu ◽  
Yan-Ping Jiang ◽  
Wen-Hua Li ◽  
...  
Keyword(s):  
Thin Film ◽  
Resistive Switching ◽  
Switching Behavior ◽  
Resistive Switching Behavior ◽  
Bipolar Resistive Switching ◽  
Nanostructured Tio2 ◽  
Zro2 Thin Film ◽  
Conduction Mechanisms

Bipolar resistive switching behavior of CaTiO3 films grown by hydrothermal epitaxy

RSC Advances ◽  
2015 ◽  
Vol 5 (51) ◽  
pp. 40714-40718 ◽  
Author(s):  
Fengzhen Lv ◽  
Cunxu Gao ◽  
Peng Zhang ◽  
Chunhui Dong ◽  
Chao Zhang ◽  
...  
Keyword(s):  
Hydrothermal Synthesis ◽  
Resistive Switching ◽  
Switching Behavior ◽  
Resistive Switching Behavior ◽  
Bipolar Resistive Switching

Epitaxial CaTiO3 films, with smooth and dense surface, were fabricated by the promising hydrothermal synthesis on the Nb:SrTiO3(001) substrate.

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