High temperature thermal management with boron nitride nanosheets

Nanoscale ◽  
2018 ◽  
Vol 10 (1) ◽  
pp. 167-173 ◽  
Author(s):  
Yilin Wang ◽  
Lisha Xu ◽  
Zhi Yang ◽  
Hua Xie ◽  
Puqing Jiang ◽  
...  
Keyword(s):  
High Temperature ◽  
Boron Nitride ◽  
Thermal Management ◽  
Power Density ◽  
High Power ◽  
Heat Dissipation ◽  
Rapid Development ◽  
High Power Density ◽  
Boron Nitride Nanosheets

The rapid development of high power density devices requires more efficient heat dissipation.

scholarly journals Advanced Thermal Management for High Power Density Electronics

2017 ◽  
Author(s):  
Nenad Miljkovic ◽  
Thomas Foulkes ◽  
Junho Oh ◽  
Patrick Birbarah ◽  
Robert Pilawa-Podgurski ◽  
...  
Keyword(s):  
Thermal Management ◽  
Power Density ◽  
High Power ◽  
High Power Density

Embedded Microjets for Thermal Management of High Power-Density Electronic Devices

2019 ◽  
Vol 9 (2) ◽  
pp. 269-278 ◽  
Author(s):  
Stephen M. Walsh ◽  
Bernard A. Malouin ◽  
Eric A. Browne ◽  
Kevin R. Bagnall ◽  
Evelyn N. Wang ◽  
...  
Keyword(s):  
Thermal Management ◽  
Power Density ◽  
High Power ◽  
Electronic Devices ◽  
High Power Density

Near-junction heat spreaders for hot spot thermal management of high power density electronic devices

2019 ◽  
Vol 126 (16) ◽  
pp. 165113
Author(s):  
R. Soleimanzadeh ◽  
R. A. Khadar ◽  
M. Naamoun ◽  
R. van Erp ◽  
E. Matioli
Keyword(s):  
Thermal Management ◽  
Power Density ◽  
High Power ◽  
Hot Spot ◽  
Electronic Devices ◽  
High Power Density ◽  
Heat Spreaders

A High Temperature, High Power Density Package for SiC and GaN Power Devices

2015 ◽  
Vol 2015 (HiTEN) ◽  
pp. 000208-000213 ◽  
Author(s):  
Z. Cole ◽  
B. McGee ◽  
J. Stabach ◽  
C. B. O'Neal ◽  
B. Passmore
Keyword(s):  
High Temperature ◽  
Power Density ◽  
High Power ◽  
Mechanical Design ◽  
Three Dimensional ◽  
High Power Density ◽  
Power Module ◽  
Modeling And Analysis ◽  
Low Profile ◽  
Three Dimensional Finite Element

In this work, a compact 600 – 1700 V high current power package housing either silicon carbide (SiC) or gallium nitride (GaN) power die was designed and developed. Several notable configurations of the package include diode half-bridges, co-packed MOSFET-diode pairs, and cascode configured GaN devices. In order to avoid a significant redesign effort for each new application or improvement in device technology, a device-neutral design strategy enables the use of a variety of die types from any manufacturer depending on the end-use application's requirements. The basic SOT-227 is a widely used package type found in everything from electronic welders and power supplies to motor controls and inverters. This module is a variant of that style of package which also addresses some issues that a standard SOT-227 package has when used in higher voltage applications; it has increased creepage and clearance distances which meet IPC, UL, and IEC standards up to 1700 volts while retaining an isolated substrate. It also has low parasitic values in comparison to the SOT-227. One of the key elements of this design is the removal of the baseplate. This allows for far lower weight, volume, and cost as well as reduced manufacturing complexity. The wide bandgap power package is composed of high temperature capable materials, which allow for the high junction temperatures inherent in these high power density devices. This paves the way for the design of a small, low-profile package with low parasitic inductances and a small junction-to-case thermal resistance. This paper will discuss the mechanical design of the power package as well as the three-dimensional finite-element modeling and analysis of the thermal, electrical, and mechanical characteristics. In addition, the electrical characteristics as a function of temperature of the power module up to 225 °C will be presented.

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