scholarly journals Advanced Thermal Management for High Power Density Electronics

2017 ◽  
Author(s):  
Nenad Miljkovic ◽  
Thomas Foulkes ◽  
Junho Oh ◽  
Patrick Birbarah ◽  
Robert Pilawa-Podgurski ◽  
...  
Author(s):  
Stephen M. Walsh ◽  
Bernard A. Malouin ◽  
Eric A. Browne ◽  
Kevin R. Bagnall ◽  
Evelyn N. Wang ◽  
...  

2019 ◽  
Vol 126 (16) ◽  
pp. 165113
Author(s):  
R. Soleimanzadeh ◽  
R. A. Khadar ◽  
M. Naamoun ◽  
R. van Erp ◽  
E. Matioli

2007 ◽  
Vol 6 (2) ◽  
pp. 34 ◽  
Author(s):  
G. Ribatski ◽  
L. Cabezas-Gómez ◽  
H. A. Navarro ◽  
J. M. Saíz-Jabardo

In this paper, the importance of the development of new high power density thermal management systems for electronic devices is assessed. It is described the new heat sink technologies under development to be used in the cooling of microprocessors. The main difficulties to be overcome before the spreading of one specific heat sink configuration are identified. At the end, it is concluded that a heat sink based on flow boiling in micro-scale channels is the most promising approach.


Author(s):  
Tanya Liu ◽  
Farzad Houshmand ◽  
Catherine Gorle ◽  
Sebastian Scholl ◽  
Hyoungsoon Lee ◽  
...  

Advances in manufacturing techniques are inspiring the design of novel integrated microscale thermal cooling devices seeking to push the limits of current thermal management solutions in high heat flux applications. These advanced cooling technologies can be used to improve the performance of high power density electronics such as GaN-based RF power amplifiers. However, their optimal design requires careful analysis of the combined effects of conduction and convection. Many numerical simulations and optimization studies have been performed for single cell models of microchannel heat sinks, but these simulations do not provide insight into the flow and heat transfer through the entire device. This study therefore presents the results of conjugate heat transfer CFD simulations for a complex copper monolithic heat sink integrated with a 100 micron thick, 5 mm by 1 mm high power density GaN-SiC chip. The computational model (13 million cells) represents both the chip and the heat sink, which consists of multiple inlets and outlets for fluid entry and exit, delivery and collection manifold systems, and an array of fins that form rectangular microchannels. Total chip powers of up to 150 W at the GaN gates were considered, and a quarter of the device was modeled for total inlet mass flow rates of 1.44 g/s and 1.8 g/s (0.36 g/s and 0.45 g/s for the quarter device), corresponding to laminar flow at Reynolds numbers between 19.5 and 119.3. It was observed that the mass flow rates through individual microchannels in the device vary by up to 45%, depending on the inlet/outlet locations and pressure drop in the manifolds. The results demonstrate that full device simulations provide valuable insight into the multiple parameters that affect cooling performance.


2020 ◽  
Vol 168 ◽  
pp. 114832 ◽  
Author(s):  
Bin Ding ◽  
Zhi-Hao Zhang ◽  
Liang Gong ◽  
Ming-Hai Xu ◽  
Zhao-Qin Huang

Author(s):  
Joseph Homitz ◽  
Brian P. Tucker ◽  
Janelle M. Messmer

High power levels and high power densities associated with directed energy weapon (DEW) systems, electronic warfare systems, and high thrust-to-weight propulsion systems require the development of effective and efficient thermal management solutions. Among many critical thermal management issues, high peak waste heat generation and limited cooling capacity onboard mobile weapon platforms necessitate the development of advanced thermal storage devices. In addition to storing large amounts of energy in a compact, lightweight package, the devices must be able to store energy rapidly at high power levels. This paper presents the design of an advanced phase-change thermal storage device developed to meet the requirements of high-power-density systems. Results of experimental performance evaluations are also presented. Based on these evaluations, it is predicted that the device will be able to store an average heat load of up to 2.9 kW/kg over a 20-second period. This thermal storage device is applicable to many different thermal management architectures, is easily adapted to meet the requirements of a wide range of high-power systems, and has potential to significantly reduce thermal management size, weight, and power requirements.


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