scholarly journals Single photon emission from plasma treated 2D hexagonal boron nitride

Nanoscale ◽  
2018 ◽  
Vol 10 (17) ◽  
pp. 7957-7965 ◽  
Author(s):  
Zai-Quan Xu ◽  
Christopher Elbadawi ◽  
Toan Trong Tran ◽  
Mehran Kianinia ◽  
Xiuling Li ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Plasma Etching ◽  
Single Photon ◽  
Hexagonal Boron Nitride ◽  
Photon Emission ◽  
Single Photon Emission ◽  
Single Photon Emitters ◽  
Ar Plasma

Ar plasma etching and annealing are highly robust in generating oxygen related single photon emitters in hBN.

scholarly journals Substitutional impurities in monolayer hexagonal boron nitride as single-photon emitters

2020 ◽  
Vol 10 ◽  
pp. 184798042094934
Author(s):  
Michele Re Fiorentin ◽  
Kiptiemoi Korir Kiprono ◽  
Francesca Risplendi
Keyword(s):  
Boron Nitride ◽  
Density Functional ◽  
Single Photon ◽  
Hexagonal Boron Nitride ◽  
Photon Emission ◽  
Single Photon Emission ◽  
Defect States ◽  
Impurity Atoms ◽  
Single Photon Emitters ◽  
Substitutional Impurities

Single-photon emitters in hexagonal boron nitride have attracted great attention over the last few years due to their excellent optoelectronical properties. Despite the vast range of results reported in the literature, studies on substitutional impurities belonging to the 13th and 15th groups have not been reported yet. Here, through theoretical modeling, we provide direct evidence that hexagonal boron nitride can be opportunely modified by introducing impurity atoms such as aluminum or phosphorus that may work as color centers for single-photon emission. By means of density functional theory, we focus on determining the structural stability, induced strain, and charge states of such defects and discuss their electronic properties. Nitrogen substitutions with heteroatoms of group 15 are shown to provide attractive features (e.g. deep defect levels and localized defect states) for single-photon emission. These results may open up new possibilities for employing innovative quantum emitters based on hexagonal boron nitride for emerging applications in nanophotonics and nanoscale sensing devices.

Single-photon emission from two-dimensional hexagonal boron nitride annealed in a carbon-rich environment

2020 ◽  
Vol 117 (24) ◽  
pp. 244002
Author(s):  
Chao Lyu ◽  
Yaozheng Zhu ◽  
Pingfan Gu ◽  
Jiandong Qiao ◽  
Kenji Watanabe ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Single Photon ◽  
Hexagonal Boron Nitride ◽  
Photon Emission ◽  
Two Dimensional ◽  
Single Photon Emission

scholarly journals Identifying carbon as the source of visible single-photon emission from hexagonal boron nitride

2020 ◽  
Author(s):  
Noah Mendelson ◽  
Dipankar Chugh ◽  
Jeffrey R. Reimers ◽  
Tin S. Cheng ◽  
Andreas Gottscholl ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Single Photon ◽  
Hexagonal Boron Nitride ◽  
Photon Emission ◽  
Single Photon Emission

scholarly journals Purification of single-photon emission from hBN using post-processing treatments

Nanophotonics ◽  
2019 ◽  
Vol 8 (11) ◽  
pp. 2049-2055 ◽  
Author(s):  
Chi Li ◽  
Zai-Quan Xu ◽  
Noah Mendelson ◽  
Mehran Kianinia ◽  
Milos Toth ◽  
...  
Keyword(s):  
Quantum Information Processing ◽  
Single Photon ◽  
Hexagonal Boron Nitride ◽  
Photon Emission ◽  
Chemical Vapor ◽  
Material System ◽  
Single Photon Emission ◽  
Large Area ◽  
Single Photon Emitters ◽  
On Chip

AbstractSingle-photon emitters (SPEs) in hexagonal boron nitride (hBN) are promising components for on-chip quantum information processing. Recently, large-area hBN films prepared by chemical vapor deposition (CVD) were found to host uniform, high densities of SPEs. However, the purity of these emitters has, to date, been low, hindering their applications in practical devices. In this work, we present two methods for post-growth processing of hBN, which significantly improve SPEs in hBN films that had been transferred from substrates used for CVD. The emitters exhibit high photon purities in excess of 90% and narrow linewidths of ~3 nm at room temperature. Our work lays a foundation for producing high-quality emitters in an ultra-compact two-dimensional material system and paves the way for deployment of hBN SPEs in scalable on-chip photonic and quantum devices.

scholarly journals Position-controlled quantum emitters with reproducible emission wavelength in hexagonal boron nitride

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Clarisse Fournier ◽  
Alexandre Plaud ◽  
Sébastien Roux ◽  
Aurélie Pierret ◽  
Michael Rosticher ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Single Photon ◽  
Hexagonal Boron Nitride ◽  
Photon Emission ◽  
Spatial Location ◽  
Emission Wavelength ◽  
Visible Range ◽  
Single Photon Emitters ◽  
Low Dimensional ◽  
Quantum Emitters

AbstractSingle photon emitters (SPEs) in low-dimensional layered materials have recently gained a large interest owing to the auspicious perspectives of integration and extreme miniaturization offered by this class of materials. However, accurate control of both the spatial location and the emission wavelength of the quantum emitters is essentially lacking to date, thus hindering further technological steps towards scalable quantum photonic devices. Here, we evidence SPEs in high purity synthetic hexagonal boron nitride (hBN) that can be activated by an electron beam at chosen locations. SPE ensembles are generated with a spatial accuracy better than the cubed emission wavelength, thus opening the way to integration in optical microstructures. Stable and bright single photon emission is subsequently observed in the visible range up to room temperature upon non-resonant laser excitation. Moreover, the low-temperature emission wavelength is reproducible, with an ensemble distribution of width 3 meV, a statistical dispersion that is more than one order of magnitude lower than the narrowest wavelength spreads obtained in epitaxial hBN samples. Our findings constitute an essential step towards the realization of top-down integrated devices based on identical quantum emitters in 2D materials.

scholarly journals Robust Multicolor Single Photon Emission from Point Defects in Hexagonal Boron Nitride

ACS Nano ◽  
2016 ◽  
Vol 10 (8) ◽  
pp. 7331-7338 ◽  
Author(s):  
Toan Trong Tran ◽  
Christopher Elbadawi ◽  
Daniel Totonjian ◽  
Charlene J. Lobo ◽  
Gabriele Grosso ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Point Defects ◽  
Single Photon ◽  
Hexagonal Boron Nitride ◽  
Photon Emission ◽  
Single Photon Emission

scholarly journals Tunable and high-purity room temperature single-photon emission from atomic defects in hexagonal boron nitride

2017 ◽  
Vol 8 (1) ◽  
Author(s):  
Gabriele Grosso ◽  
Hyowon Moon ◽  
Benjamin Lienhard ◽  
Sajid Ali ◽  
Dmitri K. Efetov ◽  
...  
Keyword(s):  
Boron Nitride ◽  
High Purity ◽  
Room Temperature ◽  
Single Photon ◽  
Hexagonal Boron Nitride ◽  
Photon Emission ◽  
Single Photon Emission

scholarly journals Efficient single photon emission from a high-purity hexagonal boron nitride crystal

2016 ◽  
Vol 94 (12) ◽  
Author(s):  
L. J. Martínez ◽  
T. Pelini ◽  
V. Waselowski ◽  
J. R. Maze ◽  
B. Gil ◽  
...  
Keyword(s):  
Boron Nitride ◽  
High Purity ◽  
Single Photon ◽  
Hexagonal Boron Nitride ◽  
Photon Emission ◽  
Single Photon Emission
Sign in / Sign up

Export Citation Format

Share Document