scholarly journals MoS2-DNA and MoS2 based sensors

RSC Advances ◽  
2017 ◽  
Vol 7 (38) ◽  
pp. 23573-23582 ◽  
Author(s):  
Lirong Yan ◽  
Haixia Shi ◽  
Xiaowei Sui ◽  
Zebin Deng ◽  
Li Gao
Keyword(s):  
Transition Metal ◽  
Family Member ◽  
Transition Metal Dichalcogenides ◽  
Chemical Properties ◽  
Physical And Chemical Properties ◽  
Metal Dichalcogenides ◽  
Physical And Chemical ◽  
And Chemical Properties

MoS2, a family member of transition-metal dichalcogenides, has shown highly attractive superiority for detection arising from its unique physical and chemical properties.

scholarly journals An emerging Janus MoSeTe material for potential applications in optoelectronic devices

2019 ◽  
Vol 7 (39) ◽  
pp. 12312-12320 ◽  
Author(s):  
Xiaoyong Yang ◽  
Deobrat Singh ◽  
Zhitong Xu ◽  
Ziwei Wang ◽  
Rajeev Ahuja
Keyword(s):  
First Principles ◽  
Transition Metal Dichalcogenides ◽  
Chemical Properties ◽  
Detailed Comparison ◽  
Physical And Chemical Properties ◽  
First Principles Calculations ◽  
Potential Applications ◽  
Metal Dichalcogenides ◽  
Physical And Chemical ◽  
And Chemical Properties

Motivated by the extraordinary physical and chemical properties of Janus transition-metal dichalcogenides (TMDs) due to the change of the crystal field originating from their asymmetry structures, the electronic and optical properties of the MoSeTe monolayer in 2H and 1T phases are systematically studied by first-principles calculations, and a detailed comparison with the parental MoSe2 and MoTe2 monolayer is made.

Gate-tunable trion binding energy in monolayer MoS2 with plasmonic superlattice

Nanoscale ◽  
2020 ◽  
Vol 12 (34) ◽  
pp. 17754-17761
Author(s):  
Zhuang Luo ◽  
Hao Jia ◽  
Liu Lv ◽  
Quan Wang ◽  
Xiaohong Yan
Keyword(s):  
Transition Metal Dichalcogenides ◽  
Optoelectronic Devices ◽  
Chemical Properties ◽  
Physical And Chemical Properties ◽  
Two Dimensional ◽  
Monolayer Mos2 ◽  
The World ◽  
Metal Dichalcogenides ◽  
Physical And Chemical ◽  
And Chemical Properties

Two-dimensional transition metal dichalcogenides exhibit promising potential and attract the attention of the world in the application of optoelectronic devices owing to their distinctive physical and chemical properties.

scholarly journals Influence of Dislocations in Transition Metal Oxides on Selected Physical and Chemical Properties

Crystals ◽  
2018 ◽  
Vol 8 (6) ◽  
pp. 241 ◽  
Author(s):  
Kristof Szot ◽  
Christian Rodenbücher ◽  
Gustav Bihlmayer ◽  
Wolfgang Speier ◽  
Ryo Ishikawa ◽  
...  
Keyword(s):  
Transition Metal ◽  
Metal Oxides ◽  
Transition Metal Oxides ◽  
Chemical Properties ◽  
Physical And Chemical Properties ◽  
Physical And Chemical ◽  
And Chemical Properties

Evolution of the structural, energetic, and electronic properties of the 3d, 4d, and 5d transition-metal clusters (30 TMn systems for n = 2–15): a density functional theory investigation

2017 ◽  
Vol 19 (23) ◽  
pp. 15484-15502 ◽  
Author(s):  
Anderson S. Chaves ◽  
Maurício J. Piotrowski ◽  
Juarez L. F. Da Silva
Keyword(s):  
Density Functional Theory ◽  
Transition Metal ◽  
Density Functional ◽  
Metal Clusters ◽  
Chemical Properties ◽  
Physical And Chemical Properties ◽  
Transition Metal Clusters ◽  
Functional Theory ◽  
Physical And Chemical ◽  
And Chemical Properties

Subnanometric transition-metal (TM) clusters have attracted great attention due to their unexpected physical and chemical properties, leastwise compared to their bulk counterparts.

scholarly journals In-plane and vertical heterostructures from 1T’/2H transition-metal dichalcogenides

2022 ◽  
Author(s):  
Yang Ma ◽  
Shiyu Xu ◽  
Juntian Wei ◽  
Bin Zhou ◽  
Yongji Gong
Keyword(s):  
Transition Metal ◽  
Transition Metal Dichalcogenides ◽  
Chemical Properties ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Flexible Devices ◽  
Potential Applications ◽  
Metal Dichalcogenides ◽  
Z Contrast ◽  
Physical And Chemical

Abstract Objectives An avalanche of research has been carried out on two-dimensional (2D) transition metal dichalcogenides (TMDs) due to their potential applications in advanced electronics and flexible devices. To take full use of the emerging 2D TMDs materials, their in-plane/vertical heterostructures have been explored, enabling effective tuning of their physical and chemical properties. However, structural differences between the various phases impede the formation of functional heterostructures. Therefore, robust synthesis strategies for heterostructures with different phases have been explored in this study. Methods A chemical vapor deposition process has been proposed in which the key parameters like reaction sources, deposition sites, etc. have been carefully adjusted, trying to achieve simultaneous synthesis of 1T’/2H in-plane and vertical heterostructures. Results Consequently, 2D in-plane RexMo1-xS2/MoS2 and vertical ReS2/MoS2 heterostructures have been produced in different regions at the same time. Atomic-resolution Z-contrast images reveal the detailed atomic structure of the 1T’/2H interfaces. The lateral interface is found to contain Mo atoms with only 5-fold coordination with S due to the phase mismatch. Conclusion This work demonstrates a route to exploit heterostructures of different phases and opens the possibility to build more complicated 2D heterostructures using CVD.

First principles study of the Mn-doping effect on the physical and chemical properties of mullite-family Al2SiO5

2017 ◽  
Vol 19 (36) ◽  
pp. 24991-25001 ◽  
Author(s):  
Qingbo Wang ◽  
Chaoping Liang ◽  
Yongping Zheng ◽  
Nickolas Ashburn ◽  
Young Jun Oh ◽  
...  
Keyword(s):  
Transition Metal ◽  
First Principles ◽  
Chemical Properties ◽  
Cost Effective ◽  
Industrial Applications ◽  
Physical And Chemical Properties ◽  
Common Strategy ◽  
Earth Abundant ◽  
Physical And Chemical ◽  
And Chemical Properties

Transition metal (TM) modification is a common strategy for converting an earth-abundant mineral into a cost-effective catalyst for industrial applications.

scholarly journals Predicting two-dimensional topological phases in Janus materials by substitutional doping in transition metal dichalcogenide monolayers

2019 ◽  
Vol 3 (1) ◽  
Author(s):  
Aniceto B. Maghirang ◽  
Zhi-Quan Huang ◽  
Rovi Angelo B. Villaos ◽  
Chia-Hsiu Hsu ◽  
Liang-Ying Feng ◽  
...  
Keyword(s):  
Transition Metal ◽  
2D Materials ◽  
Transition Metal Dichalcogenides ◽  
Chemical Properties ◽  
Industrial Applications ◽  
Transition Metal Dichalcogenide ◽  
Two Dimensional ◽  
Substitutional Doping ◽  
Metal Dichalcogenides ◽  
Physical And Chemical

Abstract Ultrathin Janus two-dimensional (2D) materials are attracting intense interest currently. Substitutional doping of 2D transition metal dichalcogenides (TMDs) is of importance for tuning and possible enhancement of their electronic, physical and chemical properties toward industrial applications. Using systematic first-principles computations, we propose a class of Janus 2D materials based on the monolayers MX2 (M = V, Nb, Ta, Tc, or Re; X = S, Se, or Te) with halogen (F, Cl, Br, or I) or pnictogen (N, P, As, Sb, or Bi) substitution. Nontrivial phases are obtained on pnictogen substitution of group VB (V, Nb, or Ta), whereas for group VIIB (Tc or Re), the nontrivial phases are obtained for halogen substitution. Orbital analysis shows that the nontrivial phase is driven by the splitting of M-dyz and M-dxz orbitals. Our study demonstrates that the Janus 2D materials have the tunability and suitability for synthesis under various conditions.

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