scholarly journals Formation and decay of negative ion states up to 11 eV above the ionization energy of the nanofabrication precursor HFeCo3(CO)12

2017 ◽  
Vol 8 (9) ◽  
pp. 5949-5952 ◽  
Author(s):  
Ragesh Kumar T P ◽  
Ragnar Bjornsson ◽  
Sven Barth ◽  
Oddur Ingólfsson

Dissociative electron attachment, 11 eV above the ionization energy of the focused electron beam induced deposition (FEBID) precursor HFeCo3(CO)12. A unique observation with potential significance for FEBID precursor design.

2017 ◽  
Vol 8 ◽  
pp. 2376-2388 ◽  
Author(s):  
Ragesh Kumar T P ◽  
Sangeetha Hari ◽  
Krishna K Damodaran ◽  
Oddur Ingólfsson ◽  
Cornelis W Hagen

We present first experiments on electron beam induced deposition of silacyclohexane (SCH) and dichlorosilacyclohexane (DCSCH) under a focused high-energy electron beam (FEBID). We compare the deposition dynamics observed when growing pillars of high aspect ratio from these compounds and we compare the proximity effect observed for these compounds. The two precursors show similar behaviour with regards to fragmentation through dissociative ionization in the gas phase under single-collision conditions. However, while DCSCH shows appreciable cross sections with regards to dissociative electron attachment, SCH is inert with respect to this process. We discuss our deposition experiments in context of the efficiency of these different electron-induced fragmentation processes. With regards to the deposition dynamics, we observe a substantially faster growth from DCSCH and a higher saturation diameter when growing pillars with high aspect ratio. However, both compounds show similar behaviour with regards to the proximity effect. With regards to the composition of the deposits, we observe that the C/Si ratio is similar for both compounds and in both cases close to the initial molecular stoichiometry. The oxygen content in the DCSCH deposits is about double that of the SCH deposits. Only marginal chlorine is observed in the deposits of from DCSCH. We discuss these observations in context of potential approaches for Si deposition.


1971 ◽  
Vol 49 (9) ◽  
pp. 1571-1574 ◽  
Author(s):  
D. A. Rallis ◽  
J. M. Goodings

A trapped electron apparatus has been used to identify the processes involved in negative ion formation for the triatomic oxides SO2 and NO2. Two O− peaks are observed in SO2 with onset values at 4.2 ± 0.15 and 6.3 ± 0.2 eV, and peak values at 5.0 ± 0.15 and 7.4 ± 0.15 eV, respectively. From kinetic energy analysis of the O− ions, both peaks are found to have the same dissociation limit involving SO in its ground state. For NO2, two dissociative electron attachment peaks are observed with onset values at 1.6 ± 0.2 and 7.3 ± 0.3 eV, and peak values at 3.0 ± 0.2 and 8.1 ± 0.2 eV, respectively. The first broad peak is explained by overlapping contributions from two processes having the same dissociation limit involving ground state NO; they differ only in the amount of kinetic energy possessed by the fragments. The second peak appears to involve electronic excitation of the neutral fragment NO* with zero kinetic energy at onset.


RSC Advances ◽  
2014 ◽  
Vol 4 (63) ◽  
pp. 33222-33235 ◽  
Author(s):  
Benedikt Ómarsson ◽  
Sarah Engmann ◽  
Oddur Ingólfsson

Influence of fluorination on the negative ion resonances and dissociation dynamics in electron attachment to acetylacetone, trifluoroacetylacetone and hexafluoroacetylacetone are explored through calculations and experiments.


2008 ◽  
Vol 277 (1-3) ◽  
pp. 103-106 ◽  
Author(s):  
W. Barszczewska ◽  
J. Kočíšek ◽  
J. Skalný ◽  
V. Matejčík ◽  
Š. Matejčík

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