Extra long electron–hole diffusion lengths in CH3NH3PbI3−xClx perovskite single crystals

2017 ◽  
Vol 5 (33) ◽  
pp. 8431-8435 ◽  
Author(s):  
Fengying Zhang ◽  
Bin Yang ◽  
Yajuan Li ◽  
Weiqiao Deng ◽  
Rongxing He

Both trap-state densities and energy levels affect carrier transfer, resulting in a maximum diffusion length of 380 μm in CH3NH3PbI3−xClx (x = 0.005).

Nanomaterials ◽  
2020 ◽  
Vol 10 (9) ◽  
pp. 1871
Author(s):  
Yerkin Shabdan ◽  
Aiymkul Markhabayeva ◽  
Nurlan Bakranov ◽  
Nurxat Nuraje

This review focuses on tungsten oxide (WO3) and its nanocomposites as photoactive nanomaterials for photoelectrochemical cell (PEC) applications since it possesses exceptional properties such as photostability, high electron mobility (~12 cm2 V−1 s−1) and a long hole-diffusion length (~150 nm). Although WO3 has demonstrated oxygen-evolution capability in PEC, further increase of its PEC efficiency is limited by high recombination rate of photogenerated electron/hole carriers and slow charge transfer at the liquid–solid interface. To further increase the PEC efficiency of the WO3 photocatalyst, designing WO3 nanocomposites via surface–interface engineering and doping would be a great strategy to enhance the PEC performance via improving charge separation. This review starts with the basic principle of water-splitting and physical chemistry properties of WO3, that extends to various strategies to produce binary/ternary nanocomposites for PEC, particulate photocatalysts, Z-schemes and tandem-cell applications. The effect of PEC crystalline structure and nanomorphologies on efficiency are included. For both binary and ternary WO3 nanocomposite systems, the PEC performance under different conditions—including synthesis approaches, various electrolytes, morphologies and applied bias—are summarized. At the end of the review, a conclusion and outlook section concluded the WO3 photocatalyst-based system with an overview of WO3 and their nanocomposites for photocatalytic applications and provided the readers with potential research directions.


2009 ◽  
Vol 615-617 ◽  
pp. 857-860
Author(s):  
Donatella Puglisi ◽  
Gaetano Foti ◽  
Giuseppe Bertuccio

The achievement of nuclear detectors in Silicon Carbide imposes severe constraints on the electronic quality and thickness of the material due to the relatively high value of the energy required to generate an electron-hole pair (7.8 eV) in this material compared to the value for Si (3.6 eV). In this work, 4H-SiC charged particle detectors were realised using epitaxial layers of n-type doping as active region. The thickness of the epilayer is always below 80 μm with a net doping concentration in the range of 8 x 1013 to 1016 cm-3. These properties allowed the fabrication of Schottky diodes that operate well as radiation detectors. At low doping concentration, the epilayer is totally depleted at quite low reverse bias (≈ 50 V), thereby obtaining the maximum active volume.


2008 ◽  
Vol 388 ◽  
pp. 237-240
Author(s):  
Mariko Ikezaki ◽  
Yuji Noguchi ◽  
Keiichi Katayama ◽  
Masaru Miyayama

Superlattice-structured Bi4Ti3O12- PbBi4Ti4O15 single crystals were grown, and their properties of polarization hysteresis and leakage current along the a axis were investigated. Oxidation annealing led to a marked increase in leakage current, while annealing in N2 atmosphere yielded a marked decrease in leakage current at room temperature. These results show that electron hole is the dominant carrier for the leakage current. A well-saturated polarization hysteresis with a remanent polarization of 41 μC/cm2 was observed, which is suggested to originate from the peculiar ferroelectric displacement of Bi in the Bi2O2 layers.


2010 ◽  
Vol 96 (10) ◽  
pp. 102910 ◽  
Author(s):  
Yoontae Hwang ◽  
Roman Engel-Herbert ◽  
Nicholas G. Rudawski ◽  
Susanne Stemmer
Keyword(s):  

2009 ◽  
Vol 64 (12) ◽  
pp. 834-836
Author(s):  
Chao Ni ◽  
Yi Huang ◽  
Maolu Du

Introducing the average covalent factor N and considering the interaction of the cubic crystal field, the spin-orbit coupling and Tree’s correction effects, the crystal field parameter Dq was calculated. Also the varying tendency of Dq with the bond length R was investigated. Using the complete diagonalizing method the energy levels of the fine structure of Ga2Se3:Co2+ single crystal were calculated and assigned. The calculated and assigned results are consistent with the experimental data


1970 ◽  
Vol 23 (8) ◽  
pp. 1513 ◽  
Author(s):  
PE Fielding

Single crystals of zircon containing both Eu3+ and U4+ were grown from flux melts cooled at rates varying between 4�/hr and 2�/hr. Irradiation with u.v. develops colour centres only in those regions of a crystal containing Eu3+ and U4+. Fluorescence and absorption spectra measured at temperatures down to 77�K show that these centres are similar in behaviour to F and F' centres in the alkali halides. They are thought to be related to an exchange coupled pair, U4+-02-Eu3+, but the experimental data permit only a description in terms of one-electron energy levels. The same basic behaviour is observed for zircon containing U4+ and any other lanthanide but some interesting differences are described for U4+, Dy3+.


2020 ◽  
Vol 213 ◽  
pp. 02037
Author(s):  
Chengli Tang ◽  
Limei Zhang

Bismuth oxide (Bi2O3) is one of the potential visible-light photocatalytic materials, however, due to low electron mobility and short minority carrier diffusion length, the photocatalytic activity of Bi2O3 is restricted. The GQD/Bi2O3 composites were synthesized stably depositing single-crystalline graphene quantum dots (GQDs) with absorption edge at ~10nm, prepared by using a top-down method. The GQDBi2O3 heterojunctions were successfully established, the photo-generated electrons transfer from the Bi2O3 to the GQDs at the interface of the GQD-Bi2O3 heterojunctions, result in efficient electron-hole pairs separation and higher photocatalytic efficiency. The optimum visible performance is achieved at GQD content of 1.0 wt %, the RhB dye was nearly completely decoloured after 90 min of visible-light irradiation, and then decrease at higher doping levels due to the thicker GQD layer will cover the active sites of Bi2O3, thus leading to the greatly reduced catalytic activity.


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