Strong interfacial interaction and enhanced optical absorption in graphene/InAs and MoS2/InAs heterostructures

2017 ◽  
Vol 5 (36) ◽  
pp. 9429-9438 ◽  
Author(s):  
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Dan Wang ◽  
Ye-Xin Feng ◽  
Li-Ming Tang ◽  
Yong Zhang ◽  
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Keyword(s):  
Optical Absorption ◽  
Interfacial Interaction ◽  
Hole Pair ◽  
Electron Hole ◽  
Strong Interfacial Interaction ◽  
Electron Hole Pair

Strong interfacial interaction, remarkable electron–hole pair distribution, and obviously enhanced optical absorption in graphene/InAs and MoS2/InAs heterostructures.

Observation of the effect of DAP separation on electron-hole pair ODMR signals in GaS

1982 ◽  
Vol 44 (4) ◽  
pp. 459-464 ◽  
Author(s):  
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B.C. Cavenett ◽  
F. Levy
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Electron Hole Pair

scholarly journals Direct Observation of Entropy-Driven Electron-Hole Pair Separation at an Organic Semiconductor Interface

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Vol 114 (24) ◽  
Author(s):  
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Kristopher W. Williams ◽  
Bharat Kumar ◽  
Colin Nuckolls ◽  
X.-Y. Zhu
Keyword(s):  
Direct Observation ◽  
Organic Semiconductor ◽  
Hole Pair ◽  
Electron Hole ◽  
Semiconductor Interface ◽  
Pair Separation ◽  
Electron Hole Pair

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2002 ◽  
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pp. 1248-1255 ◽  
Author(s):  
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Diego Maiocchi
Keyword(s):  
Gallium Arsenide ◽  
Hole Pair ◽  
Electron Hole ◽  
Electron Hole Pair ◽  
Pair Generation

scholarly journals Understanding the Average Electron–Hole Pair-Creation Energy in Silicon and Germanium Based on Full-Band Monte Carlo Simulations

2019 ◽  
Vol 66 (1) ◽  
pp. 444-451 ◽  
Author(s):  
Jingtian Fang ◽  
Mahmud Reaz ◽  
Stephanie L. Weeden-Wright ◽  
Ronald D. Schrimpf ◽  
Robert A. Reed ◽  
...  
Keyword(s):  
Monte Carlo ◽  
Monte Carlo Simulations ◽  
Pair Creation ◽  
Hole Pair ◽  
Electron Hole ◽  
Full Band ◽  
Electron Hole Pair ◽  
Average Electron ◽  
Silicon And Germanium
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