AlN gradient interlayer design for the growth of high-quality AlN epitaxial film on sputtered AlN/sapphire substrate

CrystEngComm ◽  
2018 ◽  
Vol 20 (41) ◽  
pp. 6557-6564 ◽  
Author(s):  
Bo Tan ◽  
Jiahui Hu ◽  
Jun Zhang ◽  
Yi Zhang ◽  
Hanling Long ◽  
...  

In this study, we proposed a novel method to grow high-quality AlN films on sputtered AlN/sapphire substrates by designing an AlN gradient interlayer (GIL-AlN).

2016 ◽  
Vol 122 (11) ◽  
Author(s):  
Haibo Fan ◽  
Mingzi Wang ◽  
Zhou Yang ◽  
Xianpei Ren ◽  
Mingli Yin ◽  
...  

Nanomaterials ◽  
2019 ◽  
Vol 9 (11) ◽  
pp. 1634 ◽  
Author(s):  
Zhao ◽  
Hu ◽  
Lei ◽  
Wan ◽  
Gong ◽  
...  

High-quality and crack-free aluminum nitride (AlN) film on sapphire substrate is the foundation for high-efficiency aluminum gallium nitride (AlGaN)-based deep ultraviolet light-emitting diodes (DUV LEDs). We reported the growth of high-quality and crack-free AlN film on sapphire substrate with a nanometer-scale-thick AlN nucleation layer (NL). Three kinds of nanometer-scale-thick AlN NLs, including in situ low-temperature AlN (LT-AlN) NL, oxygen-undoped ex situ sputtered AlN NL, and oxygen-doped ex situ sputtered AlN NL, were prepared for epitaxial growth of AlN films on sapphire substrates. The influence of nanoscale AlN NL thickness on the optical transmittance, strain state, surface morphology, and threading dislocation (TD) density of the grown AlN film on sapphire substrate were carefully investigated. The average optical transmittance of AlN film on sapphire substrate with oxygen-doped sputtered AlN NL was higher than that of AlN films on sapphire substrates with LT-AlN NL and oxygen-undoped sputtered AlN NL in the 200–270 nm wavelength region. However, the AlN film on sapphire substrate with oxygen-undoped sputtered AlN NL had the lowest TD density among AlN films on sapphire substrates. The AlN film on sapphire substrate with the optimum thickness of sputtered AlN NL showed weak tensile stress, a crack-free surface, and low TD density. Furthermore, a 270-nm AlGaN-based DUV LED was grown on the high-quality and crack-free AlN film. We believe that our results offer a promising and practical route for obtaining high-quality and crack-free AlN film for DUV LED.


CrystEngComm ◽  
2015 ◽  
Vol 17 (16) ◽  
pp. 3070-3075 ◽  
Author(s):  
S. X. Jiang ◽  
Z. Z. Chen ◽  
X. Z. Jiang ◽  
X. X. Fu ◽  
S. Jiang ◽  
...  

A novel method based on imprinting lithography and wet etching to fabricate a volcano-shaped patterned sapphire substrate (VPSS) is presented.


2021 ◽  
Vol 872 ◽  
pp. 159706
Author(s):  
Shuai Chen ◽  
Xiong Zhang ◽  
Shuchang Wang ◽  
Aijie Fan ◽  
Jiaqi He ◽  
...  

Micromachines ◽  
2018 ◽  
Vol 9 (12) ◽  
pp. 622 ◽  
Author(s):  
Wen-Yang Hsu ◽  
Yuan-Chi Lian ◽  
Pei-Yu Wu ◽  
Wei-Min Yong ◽  
Jinn-Kong Sheu ◽  
...  

Micron-sized patterned sapphire substrates (PSS) are used to improve the performance of GaN-based light-emitting diodes (LEDs). However, the growth of GaN is initiated not only from the bottom c-plane but also from the sidewall of the micron-sized patterns. Therefore, the coalescence of these GaN crystals creates irregular voids. In this study, two kinds of nucleation layers (NL)—ex-situ AlN NL and in-situ GaN NL—were used, and the growth of sidewall GaN was successfully suppressed in both systems by modifying the micron-sized PSS surface.


2008 ◽  
Vol 2008 ◽  
pp. 1-6 ◽  
Author(s):  
Tng C. H. John ◽  
Edmond C. Prakash ◽  
Narendra S. Chaudhari

This paper proposes a novel method to generate strategic team AI pathfinding plans for computer games and simulations using probabilistic pathfinding. This method is inspired by genetic algorithms (Russell and Norvig, 2002), in that, a fitness function is used to test the quality of the path plans. The method generates high-quality path plans by eliminating the low-quality ones. The path plans are generated by probabilistic pathfinding, and the elimination is done by a fitness test of the path plans. This path plan generation method has the ability to generate variation or different high-quality paths, which is desired for games to increase replay values. This work is an extension of our earlier work on team AI: probabilistic pathfinding (John et al., 2006). We explore ways to combine probabilistic pathfinding and genetic algorithm to create a new method to generate strategic team AI pathfinding plans.


2022 ◽  
Vol 40 (4) ◽  
pp. 1-45
Author(s):  
Weiren Yu ◽  
Julie McCann ◽  
Chengyuan Zhang ◽  
Hakan Ferhatosmanoglu

SimRank is an attractive link-based similarity measure used in fertile fields of Web search and sociometry. However, the existing deterministic method by Kusumoto et al. [ 24 ] for retrieving SimRank does not always produce high-quality similarity results, as it fails to accurately obtain diagonal correction matrix  D . Moreover, SimRank has a “connectivity trait” problem: increasing the number of paths between a pair of nodes would decrease its similarity score. The best-known remedy, SimRank++ [ 1 ], cannot completely fix this problem, since its score would still be zero if there are no common in-neighbors between two nodes. In this article, we study fast high-quality link-based similarity search on billion-scale graphs. (1) We first devise a “varied- D ” method to accurately compute SimRank in linear memory. We also aggregate duplicate computations, which reduces the time of [ 24 ] from quadratic to linear in the number of iterations. (2) We propose a novel “cosine-based” SimRank model to circumvent the “connectivity trait” problem. (3) To substantially speed up the partial-pairs “cosine-based” SimRank search on large graphs, we devise an efficient dimensionality reduction algorithm, PSR # , with guaranteed accuracy. (4) We give mathematical insights to the semantic difference between SimRank and its variant, and correct an argument in [ 24 ] that “if D is replaced by a scaled identity matrix (1-Ɣ)I, their top-K rankings will not be affected much”. (5) We propose a novel method that can accurately convert from Li et al.  SimRank ~{S} to Jeh and Widom’s SimRank S . (6) We propose GSR # , a generalisation of our “cosine-based” SimRank model, to quantify pairwise similarities across two distinct graphs, unlike SimRank that would assess nodes across two graphs as completely dissimilar. Extensive experiments on various datasets demonstrate the superiority of our proposed approaches in terms of high search quality, computational efficiency, accuracy, and scalability on billion-edge graphs.


2016 ◽  
Vol 858 ◽  
pp. 1198-1201
Author(s):  
Alexander Usikov ◽  
Sergey Kurin ◽  
Iosif Barash ◽  
Alexander D. Roenkov ◽  
Andrei Antipov ◽  
...  

Hydride Vapor Phase Epitaxy (HVPE) was used to grow 1-4 μm thick undoped GaN layers on 4H-SiC and sapphire substrates. To adjust mechanical strain and crack formation in the GaN/SiC samples, the AlGaN-based buffer layer was grown at low temperature (920-980°C) and the GaN layer was grown at a higher temperature (1000-1040°C). Laser scribing through the GaN layer or the SiC substrate was applied to fabricate dies from the GaN/SiC and GaN/sapphire samples. The laser irradiation passing through the GaN layer to the sapphire substrate or through the SiC substrate to the GaN layer, along two orthogonal directions created a net of micro-cavities in sapphire and melted grooves in SiC that promote easy breakage of the sample into rectangular dies.


Author(s):  
Kenji Sugiura ◽  
Hiromichi Ohta ◽  
Kenji Nomura ◽  
Hiroshi Yanagi ◽  
Masahiro Hirano ◽  
...  

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