The blocking effect of surface dislocations on oxygen tracer diffusion in SrTiO3

2018 ◽  
Vol 20 (22) ◽  
pp. 15455-15463 ◽  
Author(s):  
Henning Schraknepper ◽  
Thomas E. Weirich ◽  
Roger A. De Souza
Keyword(s):  
Single Crystal ◽  
Oxygen Vacancies ◽  
Tracer Diffusion ◽  
Blocking Effect ◽  
Damaged Zone ◽  
Diffusion Studies ◽  
Oxygen Tracer ◽  
Effect Of Surface

Polishing-induced damaged zone in single-crystal SrTiO3 exploited in diffusion studies to investigate the interaction between oxygen vacancies and dislocations.

Oxygen Tracer Diffusion in Single-Crystal CaTiO3

1996 ◽  
Vol 124 (1) ◽  
pp. 195-197 ◽  
Author(s):  
Isao Sakaguchi ◽  
Hajime Haneda
Keyword(s):  
Single Crystal ◽  
Tracer Diffusion ◽  
Oxygen Tracer

Oxygen Tracer Diffusion in Single-Crystal Alumina

1991 ◽  
Vol 74 (9) ◽  
pp. 2086-2092 ◽  
Author(s):  
James D. Cawley ◽  
John W. Halloran ◽  
Alfred R. Cooper
Keyword(s):  
Single Crystal ◽  
Tracer Diffusion ◽  
Oxygen Tracer

Oxygen Tracer Diffusion in BaTiO3 Ceramics - Effect of Zr Impurity from Planetary Ball Milling

2013 ◽  
Vol 566 ◽  
pp. 262-265 ◽  
Author(s):  
Ken Watanabe ◽  
I. Sakaguchi ◽  
S. Hishita ◽  
H. Haneda ◽  
N. Ohashi
Keyword(s):  
Grain Boundary ◽  
Ball Milling ◽  
Oxygen Diffusion ◽  
Oxygen Vacancies ◽  
Imaging Technique ◽  
Tracer Diffusion ◽  
Milling Process ◽  
Ion Imaging ◽  
Planetary Ball Milling ◽  
Oxygen Tracer

We investigated the effect of Zr impurities on the oxygen diffusion pathway in BaTiO3 ceramics by using an ion-imaging technique. Zr impurities were introduced into BaTiO3 ceramics by a planetary ball milling process. The oxygen tracer diffused quickly from the surface up to the grain boundary and then appeared as discontinuous steps at the grain boundary. The results indicate that the grain boundary acted as a blocking layer against oxygen diffusion. The blocking for oxygen diffusion at the grain boundary is thought to originate during the formation and distribution of complex defects between the charged oxygen vacancies and the Ba vacancies near the grain boundary.

Oxygen Tracer Diffusion in Lanthanum-Doped Single-Crystal Strontium Titanate

1994 ◽  
Vol 77 (8) ◽  
pp. 2188-2190 ◽  
Author(s):  
Uta Kiessling ◽  
Jurgen Claus ◽  
Gunter Borchardt ◽  
Sylvain Weber ◽  
Stanislas Scherrer
Keyword(s):  
Single Crystal ◽  
Strontium Titanate ◽  
Tracer Diffusion ◽  
Oxygen Tracer

Non-Stoichiometry and Cation Tracer Diffusion Studies in the Magnetite-UlvÖSpinel Solution, (Fe,Ti)3-δO4

1994 ◽  
Vol 369 ◽  
Author(s):  
Sanjeev Aggarwal ◽  
Rudiger Dieckmann
Keyword(s):  
Diffusion Coefficients ◽  
Tracer Diffusion ◽  
Oxygen Activity ◽  
Spinel Solid Solution ◽  
Low Oxygen ◽  
Cation Diffusion ◽  
Deviation From Stoichiometry ◽  
Diffusion Studies ◽  
Tracer Diffusion Coefficients ◽  
Point Defect Structure

AbstractCation diffusion in the spinel solid solution (Fe1-xTix)3-δO4 (0≤ x ≤ 0.3) was investigated at 1200 ºC as a function of oxygen activity, aO2 and cationic composition, x. At different cationic compositions, cation tracer diffusion coefficients, D*Me of Me = Fe and Ti were measured as a function of oxygen activity. Plots of log DMe vs. loga0 show V-shaped curves, indicating that different types of point defects prevail at high anc low oxygen activities. Thermogravimetric experiments were conducted, using a high resolution microbalance, to determine the deviation from stoichiometry in (Fe1-xTix)3-δO4 at 1200 °C. δversus log aO2 curves are S-shaped. An analysis of the oxygen activity dependences of thecation diffusion coefficients and the deviation from stoichiometry with regardto the point defect structure suggests that at high oxygen activities cation vacancies are the predominant defects governing the deviation from stoichiometry and the diffusion ofcations. At low oxygen activities, and at small values of x, cation interstitials determine the deviation from stoichiometry, while they dominate for 0 ≤ x ≤ 0.3 inthe cation diffusion.

Limits to the rate of oxygen transport in mixed-conducting oxides

2017 ◽  
Vol 5 (38) ◽  
pp. 20334-20350 ◽  
Author(s):  
Roger A. De Souza
Keyword(s):  
Oxygen Transport ◽  
Tracer Diffusion ◽  
Surface Exchange ◽  
Conducting Oxides ◽  
Oxygen Surface Exchange ◽  
Oxygen Tracer ◽  
Oxygen Surface

Chemically reasonable limits to the rates of oxygen tracer diffusion and oxygen surface exchange in acceptor-doped oxides are examined.

scholarly journals Ferromagnetic Properties of N-Doped and Undoped TiO2 Rutile Single-Crystal Wafers with Addition of Tungsten Trioxide

Materials ◽  
2018 ◽  
Vol 11 (10) ◽  
pp. 1934 ◽  
Author(s):  
Jing Xu ◽  
Haiying Wang ◽  
Zhongpo Zhou ◽  
Zhaorui Zou
Keyword(s):  
Magnetic Properties ◽  
Single Crystal ◽  
Saturation Magnetization ◽  
Photoelectron Spectroscopy ◽  
Oxygen Vacancies ◽  
Tio2 Surface ◽  
Doped Tio2 ◽  
X Ray ◽  
N Doping ◽  
Tio2 Rutile

In this work, undoped, N-doped, WO3-loaded undoped, and WO3-loaded with N-doped TiO2 rutile single-crystal wafers were fabricated by direct current (DC) magnetron sputtering. N-doping into TiO2 and WO3 loading onto TiO2 surface were used to increase and decrease oxygen vacancies. Various measurements were conducted to analyze the structural and magnetic properties of the samples. X-ray diffraction results showed that the N-doping and WO3 loading did not change the phase of all samples. X-ray photoelectron spectroscopy results revealed that W element loaded onto rutile single-crystal wafers existed in the form of WO3. UV-Vis spectrometer results showed that the absorption edge of WO3-loaded undoped and WO3-loaded with N-doped TiO2 rutile single-crystal wafers had red shift, resulting in a slight decrease in the corresponding band gap. Photoluminescence spectra indicated that oxygen vacancies existed in all samples due to the postannealing atmosphere, and oxygen vacancies density increased with N-doping, while decreasing with WO3 loading onto TiO2 surface. The magnetic properties of the samples were investigated, and the saturation magnetization values were in the order N-doped > WO3-loaded with N-doped > undoped > WO3-loaded undoped rutile single-crystal wafers, which was the same order as the oxygen vacancy densities of these samples. N-doping improved the saturation magnetization values, while WO3-loaded decreased the saturation magnetization values. This paper reveals that the magnetic properties of WO3-loaded with N-doped rutile single-crystal wafers originate from oxygen vacancies.

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