On the influence of multiple cations on the in-gap states and phototransport properties of iodide-based halide perovskites

2018 ◽  
Vol 20 (37) ◽  
pp. 24444-24452 ◽  
Author(s):  
Doron Azulay ◽  
Igal Levine ◽  
Satyajit Gupta ◽  
Einav Barak-Kulbak ◽  
Achintya Bera ◽  
...  
Keyword(s):  
Solar Cell ◽  
Photovoltaic Performance ◽  
Recombination Centers ◽  
Halide Perovskites ◽  
Gap States

In-gap states in solar cell absorbers that are recombination centers determine the cell's photovoltaic performance.

scholarly journals How far does the defect tolerance of lead-halide perovskites range? The example of Bi impurities introducing efficient recombination centers

2019 ◽  
Vol 7 (41) ◽  
pp. 23838-23853 ◽  
Author(s):  
Mozhgan Yavari ◽  
Firouzeh Ebadi ◽  
Simone Meloni ◽  
Zi Shuai Wang ◽  
Terry Chien-Jen Yang ◽  
...  
Keyword(s):  
Density Of States ◽  
Theoretical Study ◽  
Photovoltaic Performance ◽  
Surface Photovoltage ◽  
Defect Tolerance ◽  
Recombination Centers ◽  
Halide Perovskites ◽  
Lead Halide ◽  
Deep Defects

Experimental and theoretical study on the effect of shallow and deep defects on photovoltaic performance, luminescence, surface photovoltage, and density of states.

Enhancement of the performance of CdS/CdTe heterojunction solar cell using TiO2/ZnO bi-layer ARC and V2O5 BSF layers: A simulation approach

2020 ◽  
Vol 92 (2) ◽  
pp. 20901
Author(s):  
Abdul Kuddus ◽  
Md. Ferdous Rahman ◽  
Jaker Hossain ◽  
Abu Bakar Md. Ismail
Keyword(s):  
Solar Cell ◽  
Short Circuit ◽  
Photovoltaic Performance ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Heterojunction Solar Cell ◽  
Back Surface ◽  
Heterojunction Solar Cells

This article presents the role of Bi-layer anti-reflection coating (ARC) of TiO2/ZnO and back surface field (BSF) of V2O5 for improving the photovoltaic performance of Cadmium Sulfide (CdS) and Cadmium Telluride (CdTe) based heterojunction solar cells (HJSCs). The simulation was performed at different concentrations, thickness, defect densities of each active materials and working temperatures to optimize the most excellent structure and working conditions for achieving the highest cell performance using obtained optical and electrical parameters value from the experimental investigation on spin-coated CdS, CdTe, ZnO, TiO2 and V2O5 thin films deposited on the glass substrate. The simulation results reveal that the designed CdS/CdTe based heterojunction cell offers the highest efficiency, η of ∼25% with an enhanced open-circuit voltage, Voc of 0.811 V, short circuit current density, Jsc of 38.51 mA cm−2, fill factor, FF of 80% with bi-layer ARC and BSF. Moreover, it appears that the TiO2/ZnO bi-layer ARC, as well as ETL and V2O5 as BSF, could be highly promising materials of choice for CdS/CdTe based heterojunction solar cell.

Improving photovoltaic performance of dye-sensitized solar cell by downshift luminescence and p-doping effect of Gd2O3:Sm3+

2013 ◽  
Vol 134 ◽  
pp. 59-62 ◽  
Author(s):  
Qingbei Li ◽  
Jianming Lin ◽  
Jihuai Wu ◽  
Zhang Lan ◽  
Yue Wang ◽  
...  
Keyword(s):  
Solar Cell ◽  
Photovoltaic Performance ◽  
Doping Effect ◽  
Dye Sensitized Solar Cell ◽  
Dye Sensitized

c-Si (n +)/a-Si Alloy/Pd Schottky Barrier Device for the Effective Evaluation of Photovoltaic Performance of a-Si Alloy Materials

1995 ◽  
Vol 377 ◽  
Author(s):  
X. Deng ◽  
S. J. Jones ◽  
J. Evans ◽  
M. Izu
Keyword(s):  
Solar Cell ◽  
Schottky Barrier ◽  
Carrier Transport ◽  
Metal Layer ◽  
Photovoltaic Performance ◽  
Red Light ◽  
Metal Structure ◽  
Evaluation Tool ◽  
Barrier Device ◽  
Alloy Metal

ABSTRACTThe Schottky barrier device with a metal/a-Si (n+) /a-Si alloy/metal structure has been widely used as an alternative evaluation tool for the photovoltaic performance of a-Si alloy material since it more reliably reflects the carrier transport in a solar cell than the conventional material characterization tool such as PDS, CPM, and SSPG, and is easier to be fabricated compared with a complete nip solar cell. However, a multiple chamber device making system is still needed to fabricate such a device since one does not want to deposit the a-Si intrinsic material to be studied together with an n+ layer in the same chamber. We have explored the use of a Schottky barrier device deposited on heavily doped n-type crystalline wafer substrate, c-Si (n+) /a-Si alloy/metal, as an evaluation tool for a-Si alloy materials. In this device, besides the evaporation of a thin semi-transparent metal layer, only the active a-Si alloy layer needs to be deposited using the plasma enhanced or other deposition techniques. We have compared the performance of such a device with that of reference n-i-p solar cells deposited at the same time and demonstrated that the FF measured under weak red light show a good correlation between these two types of devices. Therefore the c-Si (n+) /a-Si alloy/metal device can be used as a convenient technique to reliably evaluate the material performance in a solar cell device.

Novel Design Strategies for Perovskite Materials with Improved Stability and Suitable Band Gaps

2021 ◽  
Author(s):  
Bing Zhang ◽  
Xiaogang Wang ◽  
Yang Yang ◽  
Lei Tong ◽  
Bin Hu ◽  
...  
Keyword(s):  
Solar Cell ◽  
Band Gaps ◽  
Current Work ◽  
Design Strategies ◽  
Perovskite Materials ◽  
Improved Stability ◽  
Halide Perovskites ◽  
Novel Design

The instability of organometallic halide perovskites is deemed a key hindrance hampering their commercial utilization in solar cell research. In the current work, we investigate and compare the dynamics properties...

scholarly journals Impact of sol aging on TiO2 compact layer and photovoltaic performance of perovskite solar cell

2016 ◽  
Vol 59 (9) ◽  
pp. 710-718 ◽  
Author(s):  
Lixue Guo ◽  
Chengbin Fei ◽  
Rong Zhang ◽  
Bo Li ◽  
Ting Shen ◽  
...  
Keyword(s):  
Solar Cell ◽  
Photovoltaic Performance ◽  
Perovskite Solar Cell ◽  
Compact Layer
Sign in / Sign up

Export Citation Format

Share Document