Pressure tuning of the thermal conductivity of gallium arsenide from first-principles calculations

2018 ◽  
Vol 20 (48) ◽  
pp. 30331-30339 ◽  
Author(s):  
Zhehao Sun ◽  
Kunpeng Yuan ◽  
Xiaoliang Zhang ◽  
Dawei Tang

Pressure tuning of the thermal transport properties of gallium arsenide.

2019 ◽  
Vol 21 (20) ◽  
pp. 10442-10448 ◽  
Author(s):  
Jiang-Jiang Ma ◽  
Jing-Jing Zheng ◽  
Xue-Liang Zhu ◽  
Peng-Fei Liu ◽  
Wei-Dong Li ◽  
...  

The van der Waals interaction in a MoS2/MoSe2 bilayer heterostructure has a significant effect on its lattice thermal conductivity.


2019 ◽  
Vol 21 (11) ◽  
pp. 6011-6020 ◽  
Author(s):  
Zhehao Sun ◽  
Kunpeng Yuan ◽  
Xiaoliang Zhang ◽  
Dawei Tang

This study explores the phonon-level mechanisms for interfacial thermal transport, especially systematically analyzing the effect of crystal information at interfaces.


2021 ◽  
Vol 8 ◽  
Author(s):  
Xiaolian Wang ◽  
Wei Feng ◽  
Chen Shen ◽  
Zhehao Sun ◽  
Hangbo Qi ◽  
...  

Electronic fitness function (EFF, achieved by the electrical transport properties) as a new quantity to estimate thermoelectric (TE) performance of semiconductor crystals is usually used for screening novel TE materials. In recent years, because of the high EFF values, an increasing number of two-dimensional materials have been predicted to have the potential for TE applications via high-throughput calculations. Among them, the GeS2 monolayer has many interesting physical properties and is being used for industrial applications. Hence, in this work, we systematically investigated the TE performance, including both electronic and thermal transport properties, of the GeS2 monolayer with first-principles calculations. The results show that the structure of the GeS2 monolayer at 700 K is thermally unstable, so we study its TE performance only at 300 and 500 K. As compared with other typical TE monolayers, the GeS2 monolayer exhibits excellent electronic transport properties but a relatively high lattice thermal conductivity of 5.71 W m−1 K−1 at 500 K, and thus an unsatisfactory ZT value of 0.23. Such a low ZT value indicates that it is necessary to consider not only the electron transport properties but also the thermal transport properties to screen the thermoelectric materials with excellent performance through high-throughput calculations.


2019 ◽  
Vol 21 (21) ◽  
pp. 10931-10938 ◽  
Author(s):  
Xue-Liang Zhu ◽  
Peng-Fei Liu ◽  
Guofeng Xie ◽  
Bao-Tian Wang

The intralayer opposite phonon vibrations in the monolayer Bi2O2Se greatly suppress the thermal transport and lead to lower lattice thermal conductivity than its bilayer and bulk forms.


RSC Advances ◽  
2021 ◽  
Vol 11 (39) ◽  
pp. 24456-24465
Author(s):  
Rapaka S. C. Bose ◽  
K. Ramesh

Polycrystalline p-type Sb1.5Bi0.5Te3 (SBT) and n-type Bi2Te2.7Se0.3 (BTS) compounds possessing layered crystal structure show anisotropic electronic and thermal transport properties.


2020 ◽  
Vol 22 (10) ◽  
pp. 5832-5838 ◽  
Author(s):  
Jiang-Jiang Ma ◽  
Jing-Jing Zheng ◽  
Wei-Dong Li ◽  
Dong-Hong Wang ◽  
Bao-Tian Wang

The defects in monolayer MoSe2 have a significant effect on its lattice thermal conductivity.


2020 ◽  
Vol 307 ◽  
pp. 113802 ◽  
Author(s):  
Xiao-Long Pan ◽  
Ying-Qin Zhao ◽  
Zhao-Yi Zeng ◽  
Xiang-Rong Chen ◽  
Qi-Feng Chen

2015 ◽  
Vol 2015 ◽  
pp. 1-6 ◽  
Author(s):  
Jae-Yeol Hwang ◽  
Eun Sung Kim ◽  
Syed Waqar Hasan ◽  
Soon-Mok Choi ◽  
Kyu Hyoung Lee ◽  
...  

Highly dense pore structure was generated by simple sequential routes using NaCl and PVA as porogens in conventional PbTe thermoelectric materials, and the effect of pores on thermal transport properties was investigated. Compared with the pristine PbTe, the lattice thermal conductivity values of pore-generated PbTe polycrystalline bulks were significantly reduced due to the enhanced phonon scattering by mismatched phonon modes in the presence of pores (200 nm–2 μm) in the PbTe matrix. We obtained extremely low lattice thermal conductivity (~0.56 W m−1 K−1at 773 K) in pore-embedded PbTe bulk after sonication for the elimination of NaCl residue.


2001 ◽  
Vol 691 ◽  
Author(s):  
Donny W. Winkler ◽  
Terry M. Tritt ◽  
Robert Gagnon ◽  
J. Strom-Olsen

ABSTRACTQuasicrystals have properties associated with both crystalline and amorphous materials. These properties appear to be sensitive to both composition and annealing conditions. Therefore, it is important to investigate the influence of the microstructure on the electrical and thermal transport properties of quasicrystals. AlPdMn quasicrystal samples were prepared with various levels of Re substituted for the Mn (Al70Pd20Mn10−XReX) and then subjected to different annealing conditions. Electrical resistivity, thermopower and thermal conductivity were measured on each as grown and annealed sample over a broad range of temperature, 10 K < T < 300 K. The relationship between the electrical and thermal transport properties and microstructure will be presented and discussed.


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