Synthesis of nanostructured powders and thin films of iron sulfide from molecular precursors

Iron(iii) xanthate single-source precursors were used to deposit iron sulfide thin films and nanostructures by spin coating and solid state deposition.

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Iron Thiobiurets: Single-Source Precursors for Iron Sulfide Thin Films

Inorganic Chemistry ◽

10.1021/ic1011204 ◽

2010 ◽

Vol 49 (18) ◽

pp. 8495-8503 ◽

Cited By ~ 40

Author(s):

Karthik Ramasamy ◽

Mohammad A. Malik ◽

Madeline Helliwell ◽

Floriana Tuna ◽

Paul O’Brien

Keyword(s):

Thin Films ◽

Iron Sulfide ◽

Single Source ◽

Single Source Precursors

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Lead ethyl dithiocarbamates: efficient single-source precursors to PbS nanocubes

Royal Society Open Science ◽

10.1098/rsos.190943 ◽

2019 ◽

Vol 6 (10) ◽

pp. 190943 ◽

Cited By ~ 5

Author(s):

S. A. Saah ◽

N. O. Boadi ◽

D. Adu-Poku ◽

C. Wilkins

Keyword(s):

Thin Films ◽

Spin Coating ◽

Band Gaps ◽

Single Source ◽

Single Source Precursors ◽

X Ray ◽

Annealing Temperatures ◽

Optical Band Gaps ◽

Microscopy Images ◽

Scanning Electron

Lead ethyl dithiocarbamates have been successfully used as single-source precursors for the deposition of PbS using spin coating followed by annealing at moderate temperatures. The thin films were characterized using a powder X-ray diffractometer and were found to be face-centred cubic with the (200) plane being the most preferred orientation. Scanning electron microscopy images showed the formation of well-defined cubes. Optical band gaps of PbS thin films were estimated using Tauc plots as 0.72, 0.73 and 0.77 eV at annealing temperatures of 250, 300 and 400°C. These band gaps were all blue shifted from the bulk value of 0.41 eV. Energy-dispersive X-ray analysis was used to determine the composition of the thin films which showed an approximately 1 : 1 Pb to S ratio.

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Deposition of iron sulfide thin films by AACVD from single source precursors

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2012.02.013 ◽

2012 ◽

Vol 346 (1) ◽

pp. 106-112 ◽

Cited By ~ 25

Author(s):

Masood Akhtar ◽

Ahmed Lutfi Abdelhady ◽

M. Azad Malik ◽

Paul O'Brien

Keyword(s):

Thin Films ◽

Iron Sulfide ◽

Single Source ◽

Single Source Precursors

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Copper(I)tert-Butylthiolato Clusters as Single-Source Precursors for High-Quality Chalcocite Thin Films: Precursor Chemistry in Solution and the Solid State

Chemistry of Materials ◽

10.1021/cm0700504 ◽

2007 ◽

Vol 19 (11) ◽

pp. 2768-2779 ◽

Cited By ~ 14

Author(s):

Sven Schneider ◽

Alma Dzudza ◽

Gabriele Raudaschl-Sieber ◽

Tobin J. Marks

Keyword(s):

Thin Films ◽

Solid State ◽

Precursor Chemistry ◽

Single Source ◽

High Quality ◽

Single Source Precursors

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Heterocyclic dithiocarbamato-iron(iii) complexes: single-source precursors for aerosol-assisted chemical vapour deposition (AACVD) of iron sulfide thin films

Dalton Transactions ◽

10.1039/c5dt03881b ◽

2016 ◽

Vol 45 (6) ◽

pp. 2647-2655 ◽

Cited By ~ 35

Author(s):

Sixberth Mlowe ◽

David J. Lewis ◽

Mohammad Azad Malik ◽

James Raftery ◽

Egid B. Mubofu ◽

...

Keyword(s):

Thin Films ◽

Chemical Vapour Deposition ◽

Vapour Deposition ◽

Iron Sulfide ◽

Chemical Vapour ◽

Single Source ◽

Single Source Precursors

A series of iron(iii) heterocyclic dithiocarbamate complexes were synthesized and characterized and were used as single source precursors to deposit iron sulfide thin films.

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Iron Sulfide (FeS2) Thin Films From Single-Source Precursors by Aerosol-Assisted Chemical Vapor Deposition (AACVD)

MRS Proceedings ◽

10.1557/proc-606-133 ◽

1999 ◽

Vol 606 ◽

Cited By ~ 10

Author(s):

Paul O'Brien ◽

David J. Otway ◽

Jin-Ho Park

Keyword(s):

Thin Films ◽

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Iron Sulfide ◽

Chemical Vapor ◽

Analytical Techniques ◽

Single Source ◽

Sem Images ◽

Organic Precursor ◽

Single Source Precursors

AbstractDialkyl (or mixed alkyl)-dithiocarbamato iron(III) complexes have been used for the deposition of iron sulfide thin films using chemical vapor deposition techniques. The single-source precursors used in this work have been prepared by the reaction of FeCl3with dialkyldithiocarbamate sodium salts and characterized by a number of analytical techniques. Good quality thin films of FeS2 have been prepared from the single-source metal organic precursor, [Fe(S2CNMeiPr)3], by AACVD. XRD patterns of the films indicated crystalline iron sulfide (FeS2) grown at between 375 – 450 °C. SEM images show the films to have reasonable morphology and to be crystalline.

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A solid-state NMR investigation of single-source precursors for group 12 metal selenides; M[N(iPr2PSe)2]2(M = Zn, Cd, Hg)

Dalton Transactions ◽

10.1039/b712011g ◽

2008 ◽

pp. 481-490 ◽

Cited By ~ 10

Author(s):

Bryan A. Demko ◽

Roderick E. Wasylishen

Keyword(s):

Solid State ◽

Solid State Nmr ◽

Single Source ◽

Single Source Precursors ◽

Group 12 ◽

Metal Selenides

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Chemical vapour deposition of II–VI semiconductor thin films using M[(TePiPr2)2N]2(M = Cd, Hg) as single-source precursors

Journal of Materials Chemistry ◽

10.1039/b515362j ◽

2006 ◽

Vol 16 (10) ◽

pp. 966-969 ◽

Cited By ~ 44

Author(s):

Shivram S. Garje ◽

Jamie S. Ritch ◽

Dana J. Eisler ◽

Mohammad Afzaal ◽

Paul O'Brien ◽

...

Keyword(s):

Thin Films ◽

Chemical Vapour Deposition ◽

Vapour Deposition ◽

Chemical Vapour ◽

Single Source ◽

Single Source Precursors ◽

Semiconductor Thin Films

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Group III Metal Sulfide Thin Films From Single-Source Precursors by Chemical Vapor Deposition (CVD) Techniques

MRS Proceedings ◽

10.1557/proc-606-127 ◽

1999 ◽

Vol 606 ◽

Author(s):

Mike R. Lazell ◽

Paul O'brien ◽

David J. Otway ◽

Jin-Ho Park

Keyword(s):

Thin Films ◽

Vapor Deposition ◽

Vapour Deposition ◽

Chemical Vapour ◽

Metal Sulfide ◽

Chemical Vapor ◽

Single Source ◽

Group 13 ◽

Single Source Precursors ◽

Group Iii

AbstractSeveral single-source precursors including In(SOCNiBu2)3, In(S2CNMeHex)3 and Ga(S2CNMeR)3, (R = Et, Bu, Hex) have been prepared and used for the deposition of Group 13 metal sulfide thin films. The α and β-In2S3thin films on borosilicate glass and oc-Ga 2S3thin films on GaAs(111) single crystal substrates were prepared from the precursors by various chemical vapour deposition (CVD) techniques. These semicondcuting materials have been characterized by XRD, SEM, XPS and EDAX.

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