scholarly journals Effects of stacking method and strain on the electronic properties of the few-layer group-IVA monochalcogenide heterojunctions

RSC Advances ◽  
2018 ◽  
Vol 8 (52) ◽  
pp. 29862-29870 ◽  
Author(s):  
Yonghong Hu ◽  
Caixia Mao ◽  
Zhong Yan ◽  
Ting Shu ◽  
Hao Ni ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Group Iv ◽  
Biaxial Strain ◽  
Group Iva

We studied the effect of stacking method and biaxial strain on the electronic properties of the few-layer group-IV monochalcogenides heterojunction.

Tunable electronic properties of the dynamically stable layered mineral Pt2HgSe3 (Jacutingaite)

2020 ◽  
Vol 22 (42) ◽  
pp. 24471-24479 ◽  
Author(s):  
Asadollah Bafekry ◽  
Catherine Stampfl ◽  
Chuong Nguyen ◽  
Mitra Ghergherehchi ◽  
Bohayra Mortazavi
Keyword(s):  
Density Functional Theory ◽  
Electric Field ◽  
Electronic Properties ◽  
Density Functional ◽  
Density Functional Theory Calculations ◽  
Biaxial Strain ◽  
Functional Theory ◽  
Structural And Electronic Properties ◽  
Out Of Plane ◽  
Strain Layer

Density functional theory calculations are performed in order to study the structural and electronic properties of monolayer Pt2HgSe3. Effects of uniaxial and biaxial strain, layer thickness, electric field and out-of-plane pressure on the electronic properties are systematically investigated.

Tunable electronic properties of the novel g-ZnO/1T-TiS2 vdW heterostructure by electric field and strain: crossovers in bandgap and band alignment types

2020 ◽  
Vol 22 (14) ◽  
pp. 7412-7420 ◽  
Author(s):  
Kourosh Rahimi
Keyword(s):  
Electric Field ◽  
Electronic Properties ◽  
Band Alignment ◽  
The Novel ◽  
Biaxial Strain ◽  
Tunable Bandgap ◽  
Vdw Heterostructure

The promising g-ZnO/1T-TiS2 vdW heterostructure with tunable bandgap and band alignment type under biaxial strain and electric field was proposed.

Crystal structures and electronic properties of Sn3N4 polymorphs synthesized via high-pressure nitridation of tin

CrystEngComm ◽  
2020 ◽  
Vol 22 (20) ◽  
pp. 3531-3538
Author(s):  
Ken Niwa ◽  
Tomoya Inagaki ◽  
Tetsu Ohsuna ◽  
Zheng Liu ◽  
Takuya Sasaki ◽  
...  
Keyword(s):  
High Pressure ◽  
Electronic Properties ◽  
Crystal Structures ◽  
Crystal Chemistry ◽  
Diamond Anvil Cell ◽  
Functional Materials ◽  
Group Iva ◽  
Diamond Anvil ◽  
Laser Heated ◽  
Insight Into

Sn3N4 polymorphs were synthesized via high-pressure nitridation of tin by means of laser-heated diamond anvil cell technique. This implies new insight into the crystal chemistry and functional materials of group IVA nitrides.

scholarly journals Structural, vibrational, and electronic properties of single-layer hexagonal crystals of group IV and V elements

2018 ◽  
Vol 98 (4) ◽  
Author(s):  
Burak Özdamar ◽  
Gözde Özbal ◽  
M. Neşet Çınar ◽  
Koray Sevim ◽  
Gizem Kurt ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Single Layer ◽  
Group Iv ◽  
Hexagonal Crystals

Lateral heterostructures of monolayer group-IV monochalcogenides: band alignment and electronic properties

2017 ◽  
Vol 5 (15) ◽  
pp. 3788-3795 ◽  
Author(s):  
Kai Cheng ◽  
Yu Guo ◽  
Nannan Han ◽  
Yan Su ◽  
Junfeng Zhang ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Group Iv ◽  
Band Alignment ◽  
Band Alignments

Band alignments of lateral heterostructures of group-IV monochalcogenides.

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