scholarly journals Impact of the Ga flux incidence angle on the growth kinetics of self-assisted GaAs nanowires on Si(111)

2019 ◽  
Vol 1 (11) ◽  
pp. 4433-4441 ◽  
Author(s):  
Marco Vettori ◽  
Alexandre Danescu ◽  
Xin Guan ◽  
Philippe Regreny ◽  
José Penuelas ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Significant Role ◽  
Growth Kinetics ◽  
Molecular Beam ◽  
Incidence Angle ◽  
Group Iii ◽  
Element Fluxes ◽  
Gaas Nanowires ◽  
Diffusion Controlled ◽  
Kinetics Of

In this work we show that the incidence angle of group-III element fluxes plays a significant role in the diffusion-controlled growth of self-assisted III–V nanowires by molecular beam epitaxy.

Growth kinetics of N-face polarity GaN by plasma-assisted molecular-beam epitaxy

2004 ◽  
Vol 84 (18) ◽  
pp. 3684-3686 ◽  
Author(s):  
E. Monroy ◽  
E. Sarigiannidou ◽  
F. Fossard ◽  
N. Gogneau ◽  
E. Bellet-Amalric ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Growth Kinetics ◽  
Molecular Beam ◽  
Kinetics Of

Growth kinetics of AlxGa1–xN grown via ammonia-based metal-organic molecular beam epitaxy

2010 ◽  
Vol 312 (2) ◽  
pp. 209-212 ◽  
Author(s):  
Daniel Billingsley ◽  
Walter Henderson ◽  
David Pritchett ◽  
W. Alan Doolittle
Keyword(s):  
Molecular Beam Epitaxy ◽  
Growth Kinetics ◽  
Molecular Beam ◽  
Metal Organic ◽  
Kinetics Of

Indium-modified growth kinetics of cubic and hexagonal GaN in molecular beam epitaxy

1999 ◽  
Vol 86 (8) ◽  
pp. 4322-4325 ◽  
Author(s):  
C. Adelmann ◽  
R. Langer ◽  
E. Martinez-Guerrero ◽  
H. Mariette ◽  
G. Feuillet ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Growth Kinetics ◽  
Molecular Beam ◽  
Kinetics Of
Sign in / Sign up

Export Citation Format

Share Document