An electro-photo-sensitive synaptic transistor for edge neuromorphic visual systems

Nanoscale ◽  
2019 ◽  
Vol 11 (38) ◽  
pp. 17590-17599 ◽  
Author(s):  
Nian Duan ◽  
Yi Li ◽  
Hsiao-Cheng Chiang ◽  
Jia Chen ◽  
Wen-Qian Pan ◽  
...  

An electro-photo-sensitive synapse based on a highly reliable InGaZnO thin-film transistor is demonstrated to mimic synaptic functions and pattern-recognition functions.

Author(s):  
Koichiro Asano ◽  
Yui Sasaki ◽  
Qi Zhou ◽  
Riho Mitobe ◽  
Wei Tang ◽  
...  

We herein report an extended gate-type organic thin-film transistor (OTFT)-based polyamine sensor and its application for pattern recognition. The extended-gate electrode was functionalized with a complex of copper(II) ions and...


2020 ◽  
Vol 59 (12) ◽  
pp. 126503
Author(s):  
Tsung-Kuei Kang ◽  
Che-Fu Hsu ◽  
Han-Wen Liu ◽  
Feng-Tso Chien ◽  
Cheng-Li Lin

2020 ◽  
Vol 35 (12) ◽  
pp. 1211-1221
Author(s):  
Hong-long NING ◽  
◽  
Yu-xi DENG ◽  
Jian-lang HUANG ◽  
Zi-long LUO ◽  
...  

2014 ◽  
Vol 35 (20) ◽  
pp. 1770-1775 ◽  
Author(s):  
Stefanie Schmid ◽  
Anne K. Kast ◽  
Rasmus R. Schröder ◽  
Uwe H. F. Bunz ◽  
Christian Melzer

Electronics ◽  
2021 ◽  
Vol 10 (2) ◽  
pp. 200
Author(s):  
Do Won Kim ◽  
Hyeon Joong Kim ◽  
Changmin Lee ◽  
Kyoungdu Kim ◽  
Jin-Hyuk Bae ◽  
...  

Sol-gel processed SnO2 thin-film transistors (TFTs) were fabricated on SiO2/p+ Si substrates. The SnO2 active channel layer was deposited by the sol-gel spin coating method. Precursor concentration influenced the film thickness and surface roughness. As the concentration of the precursor was increased, the deposited films were thicker and smoother. The device performance was influenced by the thickness and roughness of the SnO2 active channel layer. Decreased precursor concentration resulted in a fabricated device with lower field-effect mobility, larger subthreshold swing (SS), and increased threshold voltage (Vth), originating from the lower free carrier concentration and increase in trap sites. The fabricated SnO2 TFTs, with an optimized 0.030 M precursor, had a field-effect mobility of 9.38 cm2/Vs, an SS of 1.99, an Ion/Ioff value of ~4.0 × 107, and showed enhancement mode operation and positive Vth, equal to 9.83 V.


2020 ◽  
Author(s):  
Lalita Devi ◽  
Amodini Mishraand ◽  
Subhasis Ghosh

Sign in / Sign up

Export Citation Format

Share Document