scholarly journals Influence of Active Channel Layer Thickness on SnO2 Thin-Film Transistor Performance

Electronics ◽  
2021 ◽  
Vol 10 (2) ◽  
pp. 200
Author(s):  
Do Won Kim ◽  
Hyeon Joong Kim ◽  
Changmin Lee ◽  
Kyoungdu Kim ◽  
Jin-Hyuk Bae ◽  
...  
Keyword(s):  
Thin Film ◽  
Field Effect ◽  
Thin Film Transistor ◽  
Sol Gel ◽  
Precursor Concentration ◽  
Sno2 Thin Film ◽  
Field Effect Mobility ◽  
Si Substrates ◽  
Channel Layer ◽  
Active Channel

Sol-gel processed SnO2 thin-film transistors (TFTs) were fabricated on SiO2/p+ Si substrates. The SnO2 active channel layer was deposited by the sol-gel spin coating method. Precursor concentration influenced the film thickness and surface roughness. As the concentration of the precursor was increased, the deposited films were thicker and smoother. The device performance was influenced by the thickness and roughness of the SnO2 active channel layer. Decreased precursor concentration resulted in a fabricated device with lower field-effect mobility, larger subthreshold swing (SS), and increased threshold voltage (Vth), originating from the lower free carrier concentration and increase in trap sites. The fabricated SnO2 TFTs, with an optimized 0.030 M precursor, had a field-effect mobility of 9.38 cm2/Vs, an SS of 1.99, an Ion/Ioff value of ~4.0 × 107, and showed enhancement mode operation and positive Vth, equal to 9.83 V.

scholarly journals Effect of Annealing Ambient on SnO2 Thin Film Transistors Fabricated via An Ethanol-based Sol-gel Route

Electronics ◽  
2019 ◽  
Vol 8 (9) ◽  
pp. 955 ◽  
Author(s):  
Hyunjae Lee ◽  
Seunghyun Ha ◽  
Jin-Hyuk Bae ◽  
In-Man Kang ◽  
Kwangeun Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Field Effect ◽  
High Performance ◽  
Structural Characteristics ◽  
Sol Gel ◽  
Critical Role ◽  
Sno2 Thin Film ◽  
Field Effect Mobility ◽  
Current Ratio

The effect of annealing ambient on SnO2 thin-film transistors (TFTs) fabricated via an ethanol-based sol-gel route was investigated. The annealing ambient has a significant effect on the structural characteristics and chemical composition and, in turn, the device performance. Although the crystalline-grain size of the SnO2 films annealed in air was the smallest, this size yielded the highest field-effect mobility. Compared with the minimization of boundary scattering via crystalline-size increase, augmentation of the free carrier concentration played a more critical role in the realization of high-performance devices. The fabricated SnO2 TFTs delivered a field-effect mobility, subthreshold swing, and on/off current ratio of 10.87 cm2/Vs, 0.87 V/decade, and 107, respectively.

scholarly journals Characteristics of MgIn2O4 Thin Film Transistors Enhanced by Introducing an MgO Buffer Layer

Coatings ◽  
2020 ◽  
Vol 10 (12) ◽  
pp. 1261
Author(s):  
Wei-De Chen ◽  
Sheng-Po Chang ◽  
Wei-Lun Huang
Keyword(s):  
Thin Film ◽  
Buffer Layer ◽  
Field Effect ◽  
Oxygen Vacancies ◽  
Thin Film Transistor ◽  
Rf Sputtering ◽  
Field Effect Mobility ◽  
Channel Layer ◽  
Gate Structure ◽  
Order Of Magnitude

In this work, an MgIn2O4 (MIO) thin film transistor (TFT) with a bottom gate structure was fabricated. The MIO channel layer was deposited by RF sputtering using a single MgIn2O4 target. The performance of MIO TFT was highly related to oxygen vacancies. As-deposited MIO TFT showed a low field-effect mobility due to doping of Mg. An MgO buffer layer was introduced to enhance the mobility of MIO TFT due to improvement of the interface with the channel layer. In addition, oxygen vacancies in the MIO channel were suppressed because of oxygen diffusion from the buffer layer. MIO TFT with a 5 nm MgO buffer layer showed an on/off current ratio of 9.68 × 103, a field-effect mobility of 4.81 cm2/V∙s, which was increased more than an order of magnitude compared with the device without a buffer layer, a threshold voltage of 2.01 V, and a subthreshold swing of 0.76 V/decade, which was improved more than 20% compared with the as-deposited one.

High Performance of Y-doped Sn-Zn-O Films Fabricated by Solution-process for Amorphous Thin Film Transistors

2014 ◽  
Vol 1630 ◽  
Author(s):  
Yunxuan Yu ◽  
Xian Gong ◽  
Dong Liu ◽  
Yan Wang ◽  
Jinfeng Kang
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Field Effect ◽  
High Performance ◽  
Sol Gel ◽  
Solution Process ◽  
Field Effect Mobility ◽  
Amorphous Thin Film ◽  
Sol Gel Process ◽  
Active Channel

ABSTRACTThe effect of Y dopant incorporated into ZTO with different Y ratios in Y-ZTO system on the performances of ZTO-based TFTs is investigated by using sol-gel process. The proper Y doped ZTO present both high film crystallization temperature and superior electrical properties as an active channel layer of TFTs. The fabricated YZTO-based TFTs with 11% Y show the excellent devices performance such as the channel field effect mobility of 1.756 cm2/Vs, SS of 2.13 V/dec, threshold voltage of 0.8V and on/off ratio of 3.12×106.

scholarly journals Improved Negative Bias Stress Stability of Sol–Gel-Processed Li-Doped SnO2 Thin-Film Transistors

Electronics ◽  
2021 ◽  
Vol 10 (14) ◽  
pp. 1629
Author(s):  
Hyeon-Joong Kim ◽  
Do-Won Kim ◽  
Won-Yong Lee ◽  
Sin-Hyung Lee ◽  
Jin-Hyuk Bae ◽  
...  
Keyword(s):  
Thin Film ◽  
Oxygen Vacancy ◽  
Thin Film Transistors ◽  
Sol Gel ◽  
Sno2 Thin Film ◽  
Negative Bias ◽  
Semiconductor Films ◽  
Saturation Regime ◽  
Si Substrates ◽  
Ionic Size

In this study, sol–gel-processed Li-doped SnO2-based thin-film transistors (TFTs) were fabricated on SiO2/p+ Si substrates. The influence of Li dopant (wt%) on the structural, chemical, optical, and electrical characteristics was investigated. By adding 0.5 wt% Li dopant, the oxygen vacancy formation process was successfully suppressed. Its smaller ionic size and strong bonding strength made it possible for Li to work as an oxygen vacancy suppressor. The fabricated TFTs consisting of 0.5 wt% Li-doped SnO2 semiconductor films delivered the field-effect mobility in a 2.0 cm2/Vs saturation regime and Ion/Ioff value of 1 × 108 and showed enhancement mode operation. The decreased oxygen vacancy inside SnO2 TFTs with 0.5 wt% Li dopant improved the negative bias stability of TFTs.

Hydrogenation Effect of Amorphous Silicon Thin Film Transistors by Atmospheric Pressure CVD

1993 ◽  
Vol 297 ◽  
Author(s):  
Byung Chul Ahn ◽  
Jeong Hyun Kim ◽  
Dong Gil Kim ◽  
Byeong Yeon Moon ◽  
Kwang Nam Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Atmospheric Pressure ◽  
Thin Film Transistors ◽  
Field Effect ◽  
Low Cost ◽  
Thin Film Transistor ◽  
Field Effect Mobility ◽  
Silicon Thin Film ◽  
Hydrogenation Effect

The hydrogenation effect was studied in the fabrication of amorphous silicon thin film transistor using APCVD technique. The inverse staggered type a-Si TFTs were fabricated with the deposited a-Si and SiO2 films by the atmospheric pressure (AP) CVD. The field effect mobility of the fabricated a-Si TFT is 0.79 cm2/Vs and threshold voltage is 5.4V after post hydrogenation. These results can be applied to make low cost a-Si TFT array using an in-line APCVD system.

Thin-film transistors with sol–gel deposited Mg0.1Zn0.9O films as active channel layer

2011 ◽  
Vol 520 (1) ◽  
pp. 519-522 ◽  
Author(s):  
F.J. Wang ◽  
Y.F. Huang ◽  
W. Li ◽  
M.S. Xue ◽  
J.F. Ou
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Sol Gel ◽  
Channel Layer ◽  
Active Channel

Improved Performance p-type Polymer (P3HT) / n-type Nanotubes (WS2) Electrolyte Gated Thin-Film Transistor

MRS Advances ◽  
2018 ◽  
Vol 3 (27) ◽  
pp. 1525-1533 ◽  
Author(s):  
Eleonora Macchia ◽  
Alla Zak ◽  
Rosaria Anna Picca ◽  
Kyriaki Manoli ◽  
Cinzia Di Franco ◽  
...  
Keyword(s):  
Thin Film ◽  
Threshold Voltage ◽  
Field Effect ◽  
Thin Film Transistor ◽  
Fold Increase ◽  
Field Effect Mobility ◽  
Figures Of Merit ◽  
Electronic Channel ◽  
Improved Performance ◽  
P Type

ABSTRACTThis work decribes the enhancement of the electrical figures of merit of an Electrolyte Gated Thin-Film Transistor (EG-TFT) comprising a nanocomposite of n-type tungsten disulfide (WS2) nanotubes (NTs) dispersed in a regio-regular p-type poly(3-hexylthiophene-2,5-diyl) (P3HT) polymeric matrix. P3HT/WS2 nanocomposites loaded with different concentrations of NTs, serving as EG-TFTs electronic channel materials have been studied and the formulation has been optimized. The resulting EG-TFTs figures of merit (field-effect mobility, threshold voltage and on-off ratio) are compared with those of the device comprising a bare P3HT semiconducting layer. The optimized P3HT/WS2 nanocomposite, comprising a 60% by weight of NTs, results in an improvement of all the elicited figures of merit with a striking ten-fold increase in the field-effect mobility and the on/off ratio along with a sizable enhancement of the in-water operational stability of the device.

Single-Crystal Thin Film Transistor by Grain-Filter Location-Controlled Excimer-Laser Crystallization

2001 ◽  
Vol 685 ◽  
Author(s):  
Barry D. van Dijk ◽  
Paul Ch. Van der Wilt ◽  
G. J. Bertens ◽  
Lis.K. Nanver ◽  
Ryoichi Ishihara
Keyword(s):  
Thin Film ◽  
Chemical Mechanical Polishing ◽  
Field Effect ◽  
Thin Film Transistor ◽  
Subthreshold Swing ◽  
Filter Method ◽  
Field Effect Mobility ◽  
Laser Crystallization ◽  
Excimer Laser Crystallization ◽  
Grain Filters

AbstractThin film transistors (TFTs) are fabricated inside a large, location-controlled, silicon grain, fabricated with the grain-filter method. In a first experiment TFTs with high field-effect mobility for electrons of 430 cm2/Vs are fabricated. The off-current and subthreshold swing have high values of 60 pA and 1.2 V/dec, respectively. The grain-filter is improved by doping the channel and by planarizing the grain-filter by chemical mechanical polishing (CMP). TFTs fabricated in CMP-planarized grain-filters have mobility, off-current, and subthreshold swing of 430 cm2/Vs, 0.3 pA, and 0.29 V/dec, respectively, which compares well with the characteristics for SOI TFTs.

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