AlN epitaxy on SiC by low-temperature atomic layer deposition via layer-by-layer, in situ atomic layer annealing
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The schematic diagram of the processing cycle including the atomic layer annealing (ALA) to achieve low-temperature epitaxial growth of AlN on SiC.
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2014 ◽
Vol 32
(1)
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pp. 01A108
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2018 ◽
Vol 36
(6)
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pp. 061503
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2011 ◽
Vol 158
(8)
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pp. D477
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2020 ◽
Vol 32
(11)
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pp. 4481-4489
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2010 ◽
Vol 120
(2-3)
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pp. 236-239
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