scholarly journals AlN epitaxy on SiC by low-temperature atomic layer deposition via layer-by-layer, in situ atomic layer annealing

RSC Advances ◽  
2019 ◽  
Vol 9 (22) ◽  
pp. 12226-12231 ◽  
Author(s):  
Wei-Chung Kao ◽  
Wei-Hao Lee ◽  
Sheng-Han Yi ◽  
Tsung-Han Shen ◽  
Hsin-Chih Lin ◽  
...  

The schematic diagram of the processing cycle including the atomic layer annealing (ALA) to achieve low-temperature epitaxial growth of AlN on SiC.

2020 ◽  
Vol 53 (34) ◽  
pp. 345105
Author(s):  
A V Uvarov ◽  
A S Gudovskikh ◽  
V N Nevedomskiy ◽  
A I Baranov ◽  
D A Kudryashov ◽  
...  

2002 ◽  
Vol 745 ◽  
Author(s):  
Martin M. Frank ◽  
Yves J. Chabal ◽  
Glen D. Wilk

ABSTRACTThere is great need for a mechanistic understanding of growth chemistry during atomic layer deposition (ALD) of films for electronic applications. Since commercial ALD reactors are presently not equipped for in situ spectroscopy, we have constructed a model reactor that enables single-pass transmission infrared spectroscopy to be performed in situ on a layer-by-layer basis. We demonstrate the viability of this approach for the study of aluminum oxide growth on silicon surfaces, motivated by alternative gate oxide applications. Thanks to submonolayer dielectric and adsorbate sensitivity, we can quantify oxide thicknesses and hydroxyl areal densities on thermal and chemical SiO2/Si(100) substrates. Methyl formation and hydroxyl consumption upon initial trimethylaluminum (TMA) reaction can also be followed. We verify that in situ grown Al2O3 films are compatible in structure to films grown in a commercial ALD reactor.


2007 ◽  
Vol 90 (15) ◽  
pp. 151101 ◽  
Author(s):  
Jae-Hwang Lee ◽  
Wai Leung ◽  
Jinho Ahn ◽  
Taeho Lee ◽  
In-Sung Park ◽  
...  

2018 ◽  
Vol 36 (6) ◽  
pp. 061503 ◽  
Author(s):  
Aparna Pilli ◽  
Jessica Jones ◽  
Veronica Lee ◽  
Natasha Chugh ◽  
Jeffry Kelber ◽  
...  

2011 ◽  
Vol 158 (8) ◽  
pp. D477 ◽  
Author(s):  
Seong Keun Kim ◽  
Sora Han ◽  
Gun Hwan Kim ◽  
Jae Hyuck Jang ◽  
Jeong Hwan Han ◽  
...  

2020 ◽  
Vol 32 (11) ◽  
pp. 4481-4489 ◽  
Author(s):  
Nathan J. O’Brien ◽  
Polla Rouf ◽  
Rouzbeh Samii ◽  
Karl Rönnby ◽  
Sydney C. Buttera ◽  
...  

2016 ◽  
Vol 108 (5) ◽  
pp. 052903 ◽  
Author(s):  
R. Zhang ◽  
P.-C. Huang ◽  
N. Taoka ◽  
M. Yokoyama ◽  
M. Takenaka ◽  
...  

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