Charateristics of Low Temperature High Quality Silicon Oxide by Plasma Enhanced Atomic Layer Deposition with In Situ Plasma Densification Process

Author(s):  
Alexander Pyymaki Perros ◽  
Perttu Sippola ◽  
Elisa Arduca ◽  
Leena-Sisko Johansson ◽  
Harri Lipsanen

2010 ◽  
Vol 132 (1) ◽  
pp. 36-37 ◽  
Author(s):  
Andrian P. Milanov ◽  
Ke Xu ◽  
Apurba Laha ◽  
Eberhard Bugiel ◽  
Ramadurai Ranjith ◽  
...  

2010 ◽  
Vol 49 (4) ◽  
pp. 04DB11 ◽  
Author(s):  
Tatsunori Murata ◽  
Yoshihiro Miyagawa ◽  
Yukio Nishida ◽  
Yoshiki Yamamoto ◽  
Tomohiro Yamashita ◽  
...  

RSC Advances ◽  
2019 ◽  
Vol 9 (22) ◽  
pp. 12226-12231 ◽  
Author(s):  
Wei-Chung Kao ◽  
Wei-Hao Lee ◽  
Sheng-Han Yi ◽  
Tsung-Han Shen ◽  
Hsin-Chih Lin ◽  
...  

The schematic diagram of the processing cycle including the atomic layer annealing (ALA) to achieve low-temperature epitaxial growth of AlN on SiC.


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