Polymer additive controlled morphology for high performance organic thin film transistors

Soft Matter ◽  
2019 ◽  
Vol 15 (29) ◽  
pp. 5790-5803 ◽  
Author(s):  
Zhengran He ◽  
Jihua Chen ◽  
Dawen Li

In this article, we review various polymer additive based approaches to control the crystal morphology and the resultant charge transport of some bench-mark, high performance, solution crystallizable, small-molecule organic semiconductors.

2014 ◽  
Vol 16 (41) ◽  
pp. 22448-22457 ◽  
Author(s):  
Ke Zhou ◽  
Huanli Dong ◽  
Hao-li Zhang ◽  
Wenping Hu

In this review, we highlight the representative development of high performance n-type and ambipolar organic semiconductors (OSCs) in recent years.


MRS Bulletin ◽  
2006 ◽  
Vol 31 (6) ◽  
pp. 455-459 ◽  
Author(s):  
Sangyun Lee ◽  
Bonwon Koo ◽  
Jae-Geun Park ◽  
Hyunsik Moon ◽  
Jungseok Hahn ◽  
...  

AbstractOrganic thin-film transistors (OTFTs) are considered indispensable in applications requiring flexibility, large area, low processing temperature, and low cost. Key challenges to be addressed include developing solution-processable gate dielectric materials that form uniform films over large areas and exhibit excellent insulating properties, reducing contact resistance at interfaces between organic semiconductors and electrodes, and optimizing the patterning of organic semiconductors. High-performance pentacene-based OTFTs have been reported with polymeric gate dielectrics and indium tin oxide source/drain electrodes. Using such OTFT backplates, a 15-in. 1024 X 768 pixel full-color active-matrix liquid-crystal display (AMLCD) and a 4.5-in. 192 X64 pixel active-matrix organic light-emitting diode (AMOLED) have been fabricated.


2008 ◽  
Vol 32 (11) ◽  
pp. 2006 ◽  
Author(s):  
Myoung-Chul Um ◽  
Junhyuk Jang ◽  
Jung-Pyo Hong ◽  
Jihoon Kang ◽  
Do Yeung Yoon ◽  
...  

Polymers ◽  
2021 ◽  
Vol 13 (3) ◽  
pp. 402
Author(s):  
Zhengran He ◽  
Ziyang Zhang ◽  
Kyeiwaa Asare-Yeboah ◽  
Sheng Bi ◽  
Jihua Chen ◽  
...  

In this study, we demonstrated for the first time that a metal-containing semicrystalline polymer was used as an additive to mediate the thin film morphology of solution-grown, small-molecule organic semiconductors. By mixing polyferrocenylsilane (PFS) with an extensively-studied organic semiconductor 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS pentacene), PFS as a semicrystalline polymer independently forms nucleation and crystallization while simultaneously ameliorating diffusivity of the blend system and tuning the surface energies as a result of its partially amorphous property. We discovered that the resultant blend film exhibited a 6-fold reduction in crystal misorientation angle and a 3-fold enlargement in average grain width. Enhanced crystal orientation considerably reduces mobility variation, while minimized defects and trap centers located at grain boundaries lessen the adverse impact on the charge transport. Consequently, bottom-gate, top-contact organic thin film transistors (OTFTs) based on the TIPS pentacene/PFS mixture yielded a 40% increase in performance consistency (represented by the ratio of average mobility to the standard deviation of mobility). The PFS semicrystalline polymer-controlled crystallization can be used to regulate the thin film morphology of other high-performance organic semiconductors and shed light on applications in organic electronic devices.


2020 ◽  
Vol 44 (19) ◽  
pp. 8032-8043 ◽  
Author(s):  
Shengbin Shi ◽  
Qiaogan Liao ◽  
Hang Wang ◽  
Guomin Xiao

A series of difluorobenzochalcogenadiazole-bithiophene copolymers are developed for high-performance organic semiconductors.


2003 ◽  
Vol 771 ◽  
Author(s):  
Tommie W. Kelley ◽  
Dawn V. Muyres ◽  
Paul F. Baude ◽  
Terry P. Smith ◽  
Todd D. Jones

AbstractWe report here methods of surface modification and device construction which consistently result in lab-scale pentacene-based TFTs with mobilities at or above 5 cm2/Vs. Surface modifications include polymeric ultrathin films presenting a passivated interface on which the semiconductor can grow. High performance TFTs have been fabricated on a variety of dielectric materials, both organic and inorganic, and are currently being implemented in manufacturable constructions. Our surface modifications have also proven useful for substituted pentacene materials and for a variety of other organic semiconductors. In addition, we report an all organic active layer, rf-powered integrated circuit. Further experiments and statistical analyses are underway to explain the elevated mobility in our samples, and efforts have been made to confirm these results through collaboration.


2012 ◽  
Vol 736 ◽  
pp. 250-274 ◽  
Author(s):  
Saumen Mandal ◽  
Gangadhar Purohit ◽  
Monica Katiyar

Inkjet printing of organic thin film transistors is an enabling technology for many applications requiring low cost electronics such as RFID tags, sensors, e-paper, and displays. This review summarizes the achievements and remaining challendges in the field. An all inkjet printed organic thin film transistor is feasible, but manufacturability needs to be improved. Often, a hybrid process in which only some layers are inkjet printed is used. Development of devices requires optimization of (1) ink chemistry, (2) inkjet process, (3) substrate ink interaction, and (4) new device structures. Several conducting, dielectric and semiconducting materials have been used to formulate ink. It appears that metal nanoparticle based conducting ink and PEDOT:PSS are widely used materials to fabricate source, drain and gate electrodes. PVPh is the most popular dielectric material for inkjet printing. To print semiconducting layer, both polymers and oligomers/small molecules are used. Many high performance organic semiconductors are p-type, but few n-type organic semiconductors show excellent performance. In addition to improved materials, challenges inherent in the inkjet process also need solutions. These are registration, alignment of the source,and drain with gate, resolution, reducing off-state current, and roll-to-roll processing.


2010 ◽  
Vol 130 (2) ◽  
pp. 161-166
Author(s):  
Yoshinori Ishikawa ◽  
Yasuo Wada ◽  
Toru Toyabe ◽  
Ken Tsutsui

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