Lowering the Schottky barrier height of G/WSSe van der Waals heterostructures by changing the interlayer coupling and applying external biaxial strain

2020 ◽  
Vol 22 (45) ◽  
pp. 26231-26240
Author(s):  
W. X. Zhang ◽  
Y. Yin ◽  
C. He
Keyword(s):  
Field Effect ◽  
Schottky Barrier Height ◽  
Field Effect Transistors ◽  
Van Der Waals ◽  
Transition Metal Dichalcogenides ◽  
Interlayer Coupling ◽  
Two Dimensional ◽  
Biaxial Strain ◽  
Metal Dichalcogenides ◽  
Design And Manufacture

Graphene-based van der Waals (vdW) heterostructures composed of two-dimensional transition metal dichalcogenides (TMDs) and graphene show great potential in the design and manufacture of field effect transistors.

Remarkably high thermal-driven MoS2 grain boundary migration mobility and its implications on defect healing

Nanoscale ◽  
2020 ◽  
Vol 12 (34) ◽  
pp. 17746-17753
Author(s):  
Xiangjun Liu ◽  
Zhi Gen Yu ◽  
Gang Zhang ◽  
Yong-Wei Zhang
Keyword(s):  
Robust Control ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Boundary Migration ◽  
Transition Metal Dichalcogenides ◽  
Grain Boundary Migration ◽  
Two Dimensional ◽  
Defect Healing ◽  
Metal Dichalcogenides ◽  
Device Applications

Two-dimensional (2D) transition-metal dichalcogenides (TMDs) hold great potential for many important device applications, such as field effect transistors and sensors, which require a robust control of defect type, density, and distribution.

scholarly journals Band alignment of two-dimensional transition metal dichalcogenides: Application in tunnel field effect transistors

2013 ◽  
Vol 103 (5) ◽  
pp. 053513 ◽  
Author(s):  
Cheng Gong ◽  
Hengji Zhang ◽  
Weihua Wang ◽  
Luigi Colombo ◽  
Robert M. Wallace ◽  
...  
Keyword(s):  
Transition Metal ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Transition Metal Dichalcogenides ◽  
Band Alignment ◽  
Two Dimensional ◽  
Metal Dichalcogenides

Anti-Ambipolar Field-Effect Transistors Based On Few-Layer 2D Transition Metal Dichalcogenides

2016 ◽  
Vol 8 (24) ◽  
pp. 15574-15581 ◽  
Author(s):  
Yongtao Li ◽  
Yan Wang ◽  
Le Huang ◽  
Xiaoting Wang ◽  
Xingyun Li ◽  
...  
Keyword(s):  
Transition Metal ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Transition Metal Dichalcogenides ◽  
Metal Dichalcogenides

Intriguing electronic structures and optical properties of two-dimensional van der Waals heterostructures of Zr2CT2 (T = O, F) with MoSe2 and WSe2

2018 ◽  
Vol 6 (11) ◽  
pp. 2830-2839 ◽  
Author(s):  
Gul Rehman ◽  
S. A. Khan ◽  
B. Amin ◽  
Iftikhar Ahmad ◽  
Li-Yong Gan ◽  
...  
Keyword(s):  
Optical Properties ◽  
Material Properties ◽  
First Principles ◽  
Electronic Structures ◽  
Van Der Waals ◽  
Transition Metal Dichalcogenides ◽  
Two Dimensional ◽  
First Principles Calculations ◽  
Van Der Waals Heterostructures ◽  
Metal Dichalcogenides

Based on (hybrid) first-principles calculations, material properties (structural, electronic, vibrational, optical, and photocatalytic) of van der Waals heterostructures and their corresponding monolayers (transition metal dichalcogenides and MXenes) are investigated.

Ferroelectric Field-Effect Transistors Based on MoS2 and CuInP2S6 Two-Dimensional van der Waals Heterostructure

ACS Nano ◽  
2018 ◽  
Vol 12 (7) ◽  
pp. 6700-6705 ◽  
Author(s):  
Mengwei Si ◽  
Pai-Ying Liao ◽  
Gang Qiu ◽  
Yuqin Duan ◽  
Peide D. Ye
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Van Der Waals ◽  
Two Dimensional ◽  
Van Der Waals Heterostructure
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