Remarkably high thermal-driven MoS2 grain boundary migration mobility and its implications on defect healing

Nanoscale ◽  
2020 ◽  
Vol 12 (34) ◽  
pp. 17746-17753
Author(s):  
Xiangjun Liu ◽  
Zhi Gen Yu ◽  
Gang Zhang ◽  
Yong-Wei Zhang
Keyword(s):  
Robust Control ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Boundary Migration ◽  
Transition Metal Dichalcogenides ◽  
Grain Boundary Migration ◽  
Two Dimensional ◽  
Defect Healing ◽  
Metal Dichalcogenides ◽  
Device Applications

Two-dimensional (2D) transition-metal dichalcogenides (TMDs) hold great potential for many important device applications, such as field effect transistors and sensors, which require a robust control of defect type, density, and distribution.

Lowering the Schottky barrier height of G/WSSe van der Waals heterostructures by changing the interlayer coupling and applying external biaxial strain

2020 ◽  
Vol 22 (45) ◽  
pp. 26231-26240
Author(s):  
W. X. Zhang ◽  
Y. Yin ◽  
C. He
Keyword(s):  
Field Effect ◽  
Schottky Barrier Height ◽  
Field Effect Transistors ◽  
Van Der Waals ◽  
Transition Metal Dichalcogenides ◽  
Interlayer Coupling ◽  
Two Dimensional ◽  
Biaxial Strain ◽  
Metal Dichalcogenides ◽  
Design And Manufacture

Graphene-based van der Waals (vdW) heterostructures composed of two-dimensional transition metal dichalcogenides (TMDs) and graphene show great potential in the design and manufacture of field effect transistors.

scholarly journals Band alignment of two-dimensional transition metal dichalcogenides: Application in tunnel field effect transistors

2013 ◽  
Vol 103 (5) ◽  
pp. 053513 ◽  
Author(s):  
Cheng Gong ◽  
Hengji Zhang ◽  
Weihua Wang ◽  
Luigi Colombo ◽  
Robert M. Wallace ◽  
...  
Keyword(s):  
Transition Metal ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Transition Metal Dichalcogenides ◽  
Band Alignment ◽  
Two Dimensional ◽  
Metal Dichalcogenides

Anti-Ambipolar Field-Effect Transistors Based On Few-Layer 2D Transition Metal Dichalcogenides

2016 ◽  
Vol 8 (24) ◽  
pp. 15574-15581 ◽  
Author(s):  
Yongtao Li ◽  
Yan Wang ◽  
Le Huang ◽  
Xiaoting Wang ◽  
Xingyun Li ◽  
...  
Keyword(s):  
Transition Metal ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Transition Metal Dichalcogenides ◽  
Metal Dichalcogenides

Electrical Characteristics of a Chemical Vapor Deposition-Grown MoS2 Monolayer-Based Field Effect Transistor

2020 ◽  
Vol 15 (6) ◽  
pp. 673-678
Author(s):  
Soo-Young Kang ◽  
Gil-Sung Kim ◽  
Min-Sung Kang ◽  
Won-Yong Lee ◽  
No-Won Park ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Transition Metal Dichalcogenides ◽  
Chemical Vapor ◽  
Electrical Characteristics ◽  
Mos2 Monolayer ◽  
2D Semiconductors ◽  
Metal Dichalcogenides

Transition metal dichalcogenides (TMDs) are layered two-dimensional (2D) semiconductors and have received significant attention for their potential application in field effect transistors (FETs), owing to their inherent characteristics. Among the various reported 2D TMD materials, monolayer (ML) molybdenum disulfide (MoS2) is being considered as a promising channel material for the fabrication of future transistors with gate lengths as small as ∼1 nm. In this work, we present chemical vapor deposition-grown triangular ML MoS2 with a lateral size of ∼22 μm and surface coverage of ∼47%, as well as a PMMA-based wet transfer process for depositing the as-grown triangular ML MoS2 flakes onto a SiO2 (∼100 nm)/p++-Si substrate. Additionally, we demonstrate the fabrication of an n-type MoS2-based FET device and study its electrical characteristics as a function of the gate voltage. Our FET device shows an excellent on/off ratio of ∼106, an off-state leakage current of less than 10– 12 A, and a field effect mobility of ∼10.4 cm2/Vs at 300 K.

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