We demonstrate the fabrication and the electrical transport properties of single crystalline
3C silicon carbide nanowires (SiC NWs). The growth of SiC NWs was carried out in a chemical
vapor deposition (CVD) furnace. Methyltrichlorosilane (MTS, CH3SiCl3) was chosen as a source
precursor. SiC NWs had diameters of less than 100 nm and lengths of several μm. For electrical
transport measurements, as-gown SiC NWs were prepared on a highly doped silicon wafer,
pre-patterned by a photo-lithography process, with a 400 nm thick SiO2 layer. Source and drain
electrodes were defined by e-beam lithography (EBL). Prior to the metal deposition (Ti/Au : 40
nm/70 nm) by thermal evaporation, the native oxide on SiC NWs was removed by buffered HF. The
estimated mobility of carriers is 15 cm2/(Vs) for a source-drain voltage (VSD) of 0.02 V. It is very low
compared to that expected in bulk and/or thin film 3C-SiC. The electrical measurements from
nanowire-based field effect transistor (FET) structures illustrate that SiC NWs are weak n-type
semiconductor. We have also demonstrated a powerful technique, a standard UV photo-lithography
process, for fabrication of SiC nanowires instead of using EBL process.
Gold Nanoparticle-Mediated Noncovalent Functionalization of Graphene for Field-Effect Transistor
