scholarly journals In situ fabrication of dendritic tin-based carbon nanostructures for hydrogen evolution reaction

2020 ◽  
Vol 4 (10) ◽  
pp. 5223-5228
Author(s):  
Oluwafunmilola Ola ◽  
Yu Chen ◽  
Kunyapat Thummavichai ◽  
Yanqiu Zhu
Keyword(s):  
Chemical Vapor Deposition ◽  
Hydrogen Evolution ◽  
Hydrogen Evolution Reaction ◽  
Vapor Deposition ◽  
Carbon Nanostructures ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Method ◽  
Deposition Method ◽  
In Situ Fabrication

In this work, dendritic tin-based carbon nanostructures with different morphologies were synthesized by a facile two-step carbonization and chemical vapor deposition method and were then evaluated for their performance in hydrogen evolution reaction.

Hydrogen evolution reaction in acidic media on single-crystalline titanium nitride nanowires as an efficient non-noble metal electrocatalyst

2016 ◽  
Vol 4 (10) ◽  
pp. 3673-3677 ◽  
Author(s):  
Yujie Han ◽  
Xin Yue ◽  
Yanshuo Jin ◽  
Xiangdong Huang ◽  
Pei Kang Shen
Keyword(s):  
Titanium Nitride ◽  
Hydrogen Evolution ◽  
Hydrogen Evolution Reaction ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Method ◽  
Deposition Method ◽  
Acidic Media ◽  
Single Crystalline ◽  
First Time

Single-crystalline titanium nitride nanowires have been directly synthesized by a novel chemical vapor deposition method and used as efficient catalysts for hydrogen evolution reaction for the first time.

Anisotropic Plasma ChemicalVapor Deposition of Copper Films in Trenches

2003 ◽  
Vol 766 ◽  
Author(s):  
Kosuke Takenaka ◽  
Masao Onishi ◽  
Manabu Takenshita ◽  
Toshio Kinoshita ◽  
Kazunori Koga ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Deposition Rate ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Anisotropic Plasma ◽  
Bottom Surface ◽  
Chemical Vapor Deposition Method ◽  
Copper Films ◽  
Deposition Method ◽  
Via Holes

AbstractAn ion-assisted chemical vapor deposition method by which Cu is deposited preferentially from the bottom of trenches (anisotropic CVD) has been proposed in order to fill small via holes and trenches. By using Ar + H2 + C2H5OH[Cu(hfac)2] discharges with a ratio H2 / (H2 + Ar) = 83%, Cu is filled preferentially from the bottom of trenches without deposition on the sidewall and top surfaces. The deposition rate on the bottom surface of trenches is experimentally found to increase with decreasing its width.

scholarly journals Thermodynamics Controlled Sharp Transformation from InP to GaP Nanowires via Introducing Trace Amount of Gallium

2021 ◽  
Vol 16 (1) ◽  
Author(s):  
Zhenzhen Tian ◽  
Xiaoming Yuan ◽  
Ziran Zhang ◽  
Wuao Jia ◽  
Jian Zhou ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Driving Force ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Method ◽  
Nanowire Growth ◽  
Calphad Approach ◽  
Deposition Method ◽  
Large Area ◽  
Growth Phenomenon

AbstractGrowth of high-quality III–V nanowires at a low cost for optoelectronic and electronic applications is a long-term pursuit of research. Still, controlled synthesis of III–V nanowires using chemical vapor deposition method is challenge and lack theory guidance. Here, we show the growth of InP and GaP nanowires in a large area with a high density using a vacuum chemical vapor deposition method. It is revealed that high growth temperature is required to avoid oxide formation and increase the crystal purity of InP nanowires. Introduction of a small amount of Ga into the reactor leads to the formation of GaP nanowires instead of ternary InGaP nanowires. Thermodynamic calculation within the calculation of phase diagrams (CALPHAD) approach is applied to explain this novel growth phenomenon. Composition and driving force calculations of the solidification process demonstrate that only 1 at.% of Ga in the catalyst is enough to tune the nanowire formation from InP to GaP, since GaP nucleation shows a much larger driving force. The combined thermodynamic studies together with III–V nanowire growth studies provide an excellent example to guide the nanowire growth.

Synthesis of greenish phosphorus on carbon substrate

2021 ◽  
Author(s):  
Haipeng Wang ◽  
Cheng Liu ◽  
HuiLi Wang ◽  
Xinpeng Han ◽  
Shaojie Zhang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Formation Mechanism ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Method ◽  
Carbon Substrate ◽  
Deposition Method ◽  
Critical Factors ◽  
Simple Chemical

One of the phosphorus allotropes called greenish phosphorus was successfully synthesized by simple chemical vapor deposition method. We revealed that the critical factors in the formation mechanism of greenish phosphorus...

Lasing of CdSe/SiO2 nanocables synthesized by the facile chemical vapor deposition method

Nanoscale ◽  
2011 ◽  
Vol 3 (8) ◽  
pp. 3072 ◽  
Author(s):  
Yu Ye ◽  
Yaoguang Ma ◽  
Song Yue ◽  
Lun Dai ◽  
Hu Meng ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Method ◽  
Deposition Method
Sign in / Sign up

Export Citation Format

Share Document