Fabricating Ultra-Flexible Photodetectors at Neutral Mechanical Plane by Encapsulation

2021 ◽  
Author(s):  
Guomin Ding ◽  
Honglei Chen ◽  
Zuxi Yu ◽  
Nan Liu ◽  
Min Wang
Keyword(s):  
Semiconductor Films

The center plane inside a bending material has no strain, which is known as neutral mechanical plane. Based on this concept, herein, we achieve ultra-flexible semiconductor films based photodetectors at...

Homogenization of Organic Semiconductor Films Formed by Vertical Electro-spray Deposition

2020 ◽  
Vol 140 (4) ◽  
pp. 179-185
Author(s):  
Hiroshi Yamauchi ◽  
Yugo Okada ◽  
Takashi Tadokoro ◽  
Kazuhiro Kudo
Keyword(s):  
Organic Semiconductor ◽  
Spray Deposition ◽  
Semiconductor Films

scholarly journals Improved Negative Bias Stress Stability of Sol–Gel-Processed Li-Doped SnO2 Thin-Film Transistors

Electronics ◽  
2021 ◽  
Vol 10 (14) ◽  
pp. 1629
Author(s):  
Hyeon-Joong Kim ◽  
Do-Won Kim ◽  
Won-Yong Lee ◽  
Sin-Hyung Lee ◽  
Jin-Hyuk Bae ◽  
...  
Keyword(s):  
Thin Film ◽  
Oxygen Vacancy ◽  
Thin Film Transistors ◽  
Sol Gel ◽  
Sno2 Thin Film ◽  
Negative Bias ◽  
Semiconductor Films ◽  
Saturation Regime ◽  
Si Substrates ◽  
Ionic Size

In this study, sol–gel-processed Li-doped SnO2-based thin-film transistors (TFTs) were fabricated on SiO2/p+ Si substrates. The influence of Li dopant (wt%) on the structural, chemical, optical, and electrical characteristics was investigated. By adding 0.5 wt% Li dopant, the oxygen vacancy formation process was successfully suppressed. Its smaller ionic size and strong bonding strength made it possible for Li to work as an oxygen vacancy suppressor. The fabricated TFTs consisting of 0.5 wt% Li-doped SnO2 semiconductor films delivered the field-effect mobility in a 2.0 cm2/Vs saturation regime and Ion/Ioff value of 1 × 108 and showed enhancement mode operation. The decreased oxygen vacancy inside SnO2 TFTs with 0.5 wt% Li dopant improved the negative bias stability of TFTs.

Thermally Tuning Terahertz Surface Plasmon Polaritons in Corrugated Semiconductor Films

2009 ◽  
Vol 48 (4) ◽  
pp. 042302
Author(s):  
Xin Wu ◽  
Ruwen Peng ◽  
De Li ◽  
Ruili Zhang ◽  
Renhao Fan ◽  
...  
Keyword(s):  
Surface Plasmon ◽  
Surface Plasmon Polaritons ◽  
Semiconductor Films ◽  
Plasmon Polaritons

Substrate Selection for Full Exploitation of Organic Semiconductor Films: Epitaxial Rubrene on β-Alanine Single Crystals

2015 ◽  
Vol 2 (18) ◽  
pp. 1500423 ◽  
Author(s):  
Silvia Trabattoni ◽  
Luisa Raimondo ◽  
Marcello Campione ◽  
Daniele Braga ◽  
Vincent C. Holmberg ◽  
...  
Keyword(s):  
Single Crystals ◽  
Organic Semiconductor ◽  
Semiconductor Films ◽  
Substrate Selection ◽  
Selection For

Theory of Photoconductivity in Semiconductor Films

1956 ◽  
Vol 104 (6) ◽  
pp. 1508-1516 ◽  
Author(s):  
Richard L. Petritz
Keyword(s):  
Semiconductor Films

Instabilities, Elasticity, and Wetting Effect in Multilayer Heteroepitaxial Growth

2003 ◽  
Vol 794 ◽  
Author(s):  
Zhi-Feng Huang ◽  
Rashmi C. Desai
Keyword(s):  
Periodic Structures ◽  
Morphological Evolution ◽  
Surface Profile ◽  
Theoretical Work ◽  
Semiconductor Films ◽  
Morphological Instability ◽  
Heteroepitaxial Growth ◽  
Surface And Interface ◽  
Short Period ◽  
Short Period Superlattices

ABSTRACTFor multilayer semiconductor films comprising various material layers, the coupling of elastic states in different layers as well as the nonequilibrium nature of the growing process are essential in understanding the surface and interface morphological instability and hence the growth mechanisms of nanostructures in the overall film. We present the theoretical work on the stress-driven instabilities during the heteroepitaxial growth of multilayers, based on the elastic analysis and the continuous nonequilibrium model. We develop a general theory which determines the morphological evolution of surface profile of the multilayer system, and then apply the results to two types of periodic structures that are being actively investigated: alternating tensile/compressive and strained/spacer multilayers. The wetting effect, which arises from the material properties changing across layer-layer interfaces, is incorporated. It exhibits a significant influence of stabilization on film morphology, particularly for the short-period superlattices. Our results are consistent with the experimental observations in AlAs/InAs/InP(001) and Ge/Si(001) multilayer structures.

Sign in / Sign up

Export Citation Format

Share Document