scholarly journals High performance and gate-controlled GeSe/HfS2 negative differential resistance device

RSC Advances ◽  
2022 ◽  
Vol 12 (3) ◽  
pp. 1278-1286
Author(s):  
Amir Muhammad Afzal ◽  
Muhammad Zahir Iqbal ◽  
Muhammad Waqas Iqbal ◽  
Thamer Alomayri ◽  
Ghulam Dastgeer ◽  
...  
Keyword(s):  
Negative Differential Resistance ◽  
High Performance ◽  
Differential Resistance ◽  
Current Ratio

A novel and astonishing p-GeSe/n-HfS2 NDR device shows a high value for the peak-to-valley current ratio in the range of 5.8.

Formation of Large Conduction Band Discontinuities of Heterointerfaces Using CdF2 AND CaF2 on Si(111)

1996 ◽  
Vol 448 ◽  
Author(s):  
Akira Izumi ◽  
Noriyuki Matsubara ◽  
Yusuke Kushida ◽  
Kazuo Tsutsui ◽  
Nikolai S. Sokolov
Keyword(s):  
Conduction Band ◽  
Negative Differential Resistance ◽  
Resonant Tunneling ◽  
Room Temperature ◽  
Quantum Effect ◽  
Differential Resistance ◽  
Resonant Tunneling Diodes ◽  
Current Ratio ◽  
Si Substrates ◽  
Tunneling Diodes

AbstractWe proposed use of a new CdF2/CaF2 heterointerface for the formation of large conduction band discontinuities to apply quantum effect devices fabricated on Si substrates. Resonant tunneling diodes using this heterointerface on Si were fabricated and negative differential resistance whose P/V current ratio of 24 at highest was observed at room temperature.

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