Solution-Processed High-Performance of p-Channel Copper-Tin-Sulphur Thin-Film Transistor

2021 ◽  
Author(s):  
Narendra Naik Mude ◽  
Ravindra Naik Bukke ◽  
Jin Jang
Keyword(s):  
Thin Film ◽  
High Performance ◽  
Thin Film Transistor ◽  
Precursor Solution ◽  
Solution Concentration ◽  
Tin Sulfide ◽  
Solution Processed ◽  
Systematic Analysis ◽  
Precursor Solution Concentration ◽  
P Type

We introduce in this paper a solution-processed copper tin sulfide (CTS) thin film by varying CTS precursor solution concentration for p-type thin-film transistor (TFT). The systematic analysis for optical and...

High-Performance Solution-Processed InGaZnO Thin-Film Transistor Fabricated by Ozone-Assisted Atmospheric Pressure Mist Deposition

2014 ◽  
Vol 10 (11) ◽  
pp. 934-938 ◽  
Author(s):  
Mamoru Furuta ◽  
Toshiyuki Kawaharamura ◽  
Takayuki Uchida ◽  
Dapeng Wang ◽  
Masaru Sanada
Keyword(s):  
Thin Film ◽  
Atmospheric Pressure ◽  
High Performance ◽  
Thin Film Transistor ◽  
Solution Processed ◽  
Mist Deposition

scholarly journals High Performance P-Type Perovskite Lagao3 Thin Film Field Effect Transistor Prepared by Solution-Processed

2022 ◽  
Vol 2152 (1) ◽  
pp. 012008
Author(s):  
Qian Chen
Keyword(s):  
Thin Film ◽  
High Performance ◽  
Low Cost ◽  
Thin Film Transistor ◽  
Solution Process ◽  
Hole Mobility ◽  
Oxide Semiconductor ◽  
Future Design ◽  
Different Temperatures ◽  
P Type

Abstract Metal oxide semiconductor (MOS) is essential to compose high-performance electronic devices, however, the investigation on p-type MOS is relatively rare compared with its n-type counterpart. In this work, LaGaO3 thin films with superior p-type conductivity have been prepared via a facile solution process. Moreover, we have implemented Al2O3 and SiO2 as the dielectric of the p-channel LaGaO3 thin film transistors (TFTs) annealed at different temperatures. Particularly, the LaGaO3/Al2O3 TFTs annealed at 700 °C exhibit an ultrahigh hole mobility of 12.4 cm2V-1s-1, Under the same conditions, LaGaO3/Al2O3 thin film transistor is two orders of magnitude higher than LaGaO3/SiO2 thin film transistor. The advanced p-type characteristics of the LaGaO3 thin film, along with its facile low-cost fabrication process can shed new light on future design of high-performance complementary MOS circuit with other optimized facile-integrated dielectrics.

30‐3: High Performance All Solution Processed Oxide Thin‐Film Transistor via Photo‐induced Semiconductor‐to‐Conductor Transformation of a‐InZnO

2019 ◽  
Vol 50 (1) ◽  
pp. 422-425 ◽  
Author(s):  
Juan Paolo S. Bermundo ◽  
Chaiyanan Kulchaisit ◽  
Dianne C. Corsino ◽  
Aimi Syairah ◽  
Mami N. Fujii ◽  
...  
Keyword(s):  
Thin Film ◽  
High Performance ◽  
Thin Film Transistor ◽  
Oxide Thin Film ◽  
Solution Processed

High performance p-type NiOx thin-film transistor by Sn doping

2016 ◽  
Vol 108 (23) ◽  
pp. 233503 ◽  
Author(s):  
Tengda Lin ◽  
Xiuling Li ◽  
Jin Jang
Keyword(s):  
Thin Film ◽  
High Performance ◽  
Thin Film Transistor ◽  
Sn Doping ◽  
P Type

High Performance p-type SnO thin-film Transistor with SiOxGate Insulator Deposited by Low-Temperature PECVD Method

2014 ◽  
Vol 14 (5) ◽  
pp. 666-672 ◽  
Author(s):  
Myeonghun U ◽  
Young-Joon Han ◽  
Sang-Hun Song ◽  
In-Tak Cho ◽  
Jong-Ho Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
High Performance ◽  
Thin Film Transistor ◽  
P Type
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