Improved high-temperature performance of 1.52 (μm InGaAsP laser diodes fabricated by two-step VPE and LPE
1996 ◽
Vol 35
(Part 1, No. 11)
◽
pp. 5711-5713
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Keyword(s):
1985 ◽
1996 ◽
Vol 35
(Part 1, No. 2B)
◽
pp. 1273-1275
◽
Keyword(s):
Keyword(s):
Keyword(s):