Monolithic integration of GaAs photoconductors with a field-effect transistor

Electronics Letters ◽

10.1049/el:19860518 ◽

1986 ◽

Vol 22 (14) ◽

pp. 753 ◽

Author(s):

D.K.W. Lam ◽

B.A. Syrett ◽

M.G. Stubbs

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Monolithic Integration ◽

Effect Transistor

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Monolithic integration of a very low threshold GaInAsP laser and metal‐insulator‐semiconductor field‐effect transistor on semi‐insulating InP

Applied Physics Letters ◽

10.1063/1.93226 ◽

1982 ◽

Vol 40 (8) ◽

pp. 643-645 ◽

Author(s):

U. Koren ◽

K. L. Yu ◽

T. R. Chen ◽

N. Bar‐Chaim ◽

S. Margalit ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Monolithic Integration ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Low Threshold ◽

Effect Transistor

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Planar monolithic integration of a GaAs photoconductor and a GaAs field-effect transistor

Electronics Letters ◽

10.1049/el:19860135 ◽

1986 ◽

Vol 22 (4) ◽

pp. 193 ◽

Author(s):

D. Decoster ◽

J.P. Vilcot ◽

M. Constant ◽

J. Ramdani ◽

H. Verriele ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Monolithic Integration ◽

Effect Transistor

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Monolithic integration of a photodiode and a field‐effect transistor on a GaAs substrate by molecular beam epitaxy

Applied Physics Letters ◽

10.1063/1.93946 ◽

1983 ◽

Vol 42 (4) ◽

pp. 380-382 ◽

Author(s):

O. Wada ◽

S. Miura ◽

M. Ito ◽

T. Fujii ◽

T. Sakurai ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Gaas Substrate ◽

Field Effect ◽

Molecular Beam ◽

Field Effect Transistor ◽

Monolithic Integration ◽

Effect Transistor

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Monolithic Integration of GaN Nanowire Light-Emitting Diode With Field Effect Transistor

IEEE Electron Device Letters ◽

10.1109/led.2019.2895846 ◽

2019 ◽

Vol 40 (3) ◽

pp. 427-430 ◽

Author(s):

Matthew Hartensveld ◽

Jing Zhang

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Light Emitting Diode ◽

Monolithic Integration ◽

Light Emitting ◽

Gan Nanowire ◽

Effect Transistor

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Planar monolithic integration of a Schottky photodiode and a GaAs field-effect transistor for 0.8 μm-wavelength applications

Electronics Letters ◽

10.1049/el:19850620 ◽

1985 ◽

Vol 21 (19) ◽

pp. 878 ◽

Author(s):

H. Verriele ◽

S. Maricot ◽

M. Constant ◽

J. Ramdani ◽

D. Decoster

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Monolithic Integration ◽

Effect Transistor ◽

Schottky Photodiode

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Monolithic integration of AlGaAs/GaAs HBT and GaAs junction-gate floated electron channel field effect transistor using selective MOCVD growth

IEEE Microwave and Guided Wave Letters ◽

10.1109/75.535831 ◽

1996 ◽

Vol 6 (9) ◽

pp. 317-319 ◽

Author(s):

Hyunchol Shin ◽

Jeong-Hwan Son ◽

Young-Se Kwon

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Monolithic Integration ◽

Electron Channel ◽

Mocvd Growth ◽

Effect Transistor

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Monolithic integration of a vertical cavity surface emitting laser and a metal semiconductor field effect transistor

Applied Physics Letters ◽

10.1063/1.108868 ◽

1993 ◽

Vol 62 (6) ◽

pp. 600-602 ◽

Author(s):

Y. J. Yang ◽

T. G. Dziura ◽

T. Bardin ◽

S. C. Wang ◽

R. Fernandez ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Monolithic Integration ◽

Cavity Surface ◽

Vertical Cavity Surface ◽

Surface Emitting Laser ◽

Effect Transistor ◽

Vertical Cavity

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Monolithic integration of a pin photodiode and a field‐effect transistor using a new fabrication technique—graded step process

Applied Physics Letters ◽

10.1063/1.95587 ◽

1985 ◽

Vol 46 (4) ◽

pp. 389-391 ◽

Author(s):

S. Miura ◽

H. Machida ◽

O. Wada ◽

K. Nakai ◽

T. Sakurai

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Monolithic Integration ◽

Fabrication Technique ◽

Step Process ◽

Pin Photodiode ◽

Effect Transistor

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Monolithic integration of an injection laser and a metal semiconductor field effect transistor

Applied Physics Letters ◽

10.1063/1.90824 ◽

1979 ◽

Vol 34 (7) ◽

pp. 430-431 ◽

Author(s):

I. Ury ◽

S. Margalit ◽

M. Yust ◽

A. Yariv

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Monolithic Integration ◽

Injection Laser ◽

Effect Transistor

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Monolithic integration of an AlGaN/GaN metal—insulator field-effect transistor with an ultra-low voltage-drop diode for self-protection

Chinese Physics B ◽

10.1088/1674-1056/21/8/087305 ◽

2012 ◽

Vol 21 (8) ◽

pp. 087305 ◽

Author(s):

Zhi-Gang Wang ◽

Wan-Jun Chen ◽

Jing Zhang ◽

Bo Zhang ◽

Zhao-Ji Li

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Low Voltage ◽

Voltage Drop ◽

Monolithic Integration ◽

Metal Insulator ◽

Effect Transistor ◽

Self Protection

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