Low threshold current density of 620 nm band MQW-SCH AlGaInP semiconductor lasers with Mg doped AlInP cladding layer

1991 ◽  
Vol 27 (17) ◽  
pp. 1569 ◽  
Author(s):  
H. Murata ◽  
Y. Terui ◽  
M. Saitoh ◽  
Y. Satoh ◽  
R. Terasaki
Keyword(s):  
Semiconductor Lasers ◽  
Current Density ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Cladding Layer ◽  
Low Threshold ◽  
Mg Doped

scholarly journals Performance characteristics of GaN/Al0.2Ga0.8N quantum dot laser at L=100Å

2018 ◽  
Vol 65 (1) ◽  
pp. 38
Author(s):  
Halima Bouchenafa ◽  
Boucif Benichou ◽  
Badra Bouabdallah
Keyword(s):  
Quantum Dot ◽  
Semiconductor Lasers ◽  
Current Density ◽  
Matrix Theory ◽  
Optical Gain ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Low Threshold ◽  
P Type ◽  
Density Matrix Theory

In this paper, a theoretical model is used to study the optical gain characteristics of  quantum dot lasers. The model is based on the density matrix theory of semiconductor lasers with relaxation broadening. The effect of doping with varying the side lengths of the box in the structure is taken into account. A comparative study of the gain spectra of p-doped, undoped and n-doped structures of  cubic quantum-dot (QD) laser respectively, is presented for various side lengths. The variation of peak gain on carrier density is also presented. The effect of side length on the variation in modal gain versus current density is plotted too. The results indicate that the p type doping is efficient to reach a better optical gain value, and to achieve low threshold current densities compared with undoped and  n-doped structures, and the optimum value for quantum dot width to achieve the lower threshold current density for the three cases is L=100A .   

Low Threshold Current Density (100) GaInAsP/InP Double-Heterostructure Lasers for Wavelength 1.3 µm

1979 ◽  
Vol 18 (9) ◽  
pp. 1795-1805 ◽  
Author(s):  
Yoshio Itaya ◽  
Yasuharu Suematsu ◽  
Shinya Katayama ◽  
Katsumi Kishino ◽  
Shigehisa Arai
Keyword(s):  
Current Density ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Double Heterostructure ◽  
Low Threshold

Low Threshold Current Density 1.5 μm Strained-MQW Laser by n-Type Modulation-Doping

2005 ◽  
pp. 1663-1668 ◽  
Author(s):  
Rui-ying Zhang ◽  
Wei Wang ◽  
Fan Zhou ◽  
Jing Bian ◽  
Ling-juan Zhao ◽  
...  
Keyword(s):  
Current Density ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Modulation Doping ◽  
Low Threshold

Low-threshold-current-density vertical-cavity surface-emitting AlGaAs/GaAs diode lasers

1989 ◽  
Vol 1 (8) ◽  
pp. 205-208 ◽  
Author(s):  
D. Botez ◽  
L.M. Zinkiewicz ◽  
T.J. Roth ◽  
L.J. Mawst ◽  
G. Peterson
Keyword(s):  
Current Density ◽  
Diode Lasers ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Cavity Surface ◽  
Vertical Cavity Surface ◽  
Low Threshold ◽  
Vertical Cavity

Low Threshold Current Density Operation of a GaInAsP/Si Hybrid Laser Prepared by Low-Temperature N2Plasma Activated Bonding

2013 ◽  
Vol 52 (6R) ◽  
pp. 060202 ◽  
Author(s):  
Yusuke Hayashi ◽  
Ryo Osabe ◽  
Keita Fukuda ◽  
Yuki Atsumi ◽  
JoonHyun Kang ◽  
...  
Keyword(s):  
Low Temperature ◽  
Current Density ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Low Threshold
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