Low-threshold-current-density vertical-cavity surface-emitting AlGaAs/GaAs diode lasers

ABSTRACTThe threshold current density of GaN-based vertical cavity surface emitting lasers (VCSELs) has been estimated. It is clarified that the introduction of a quantum well structure as an active layer is very effective for a low threshold operation and that high reflective mirrors are required for low threshold GaN-based VCSELs. Also, attempts on micro-fabrication process of GaN is presented.

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Low threshold current GaAs/InGaAs vertical-cavity surface-emitting laser grown at a constant temperature by molecular beam epitaxy

ICSE '96. 1996 IEEE International Conference on Semiconductor Electronics. Proceedings ◽

10.1109/smelec.1996.616475 ◽

2002 ◽

Author(s):

C.Y. Li ◽

D.H. Zhang ◽

S.F. Yoon

Keyword(s):

Molecular Beam Epitaxy ◽

Constant Temperature ◽

Molecular Beam ◽

Threshold Current ◽

Cavity Surface ◽

Vertical Cavity Surface ◽

Surface Emitting Laser ◽

Low Threshold ◽

Vertical Cavity

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Wide operating wavelength range and low threshold current In/sub 0.24/Ga/sub 0.76/As/GaAs vertical-cavity surface-emitting lasers

IEEE Photonics Technology Letters ◽

10.1109/68.166938 ◽

1992 ◽

Vol 4 (11) ◽

pp. 1192-1194 ◽

Cited By ~ 11

Author(s):

T.E. Sale ◽

J. Woodhead ◽

R. Grey ◽

P.N. Robson

Keyword(s):

Wavelength Range ◽

Threshold Current ◽

Cavity Surface ◽

Operating Wavelength ◽

Surface Emitting Lasers ◽

Vertical Cavity Surface ◽

Low Threshold ◽

Emitting Lasers ◽

Vertical Cavity ◽

Wide Operating

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Design and Fabrication of the Reliable GaN Based Vertical-Cavity Surface-Emitting Laser via Tunnel Junction

Crystals ◽

10.3390/cryst9040187 ◽

2019 ◽

Vol 9 (4) ◽

pp. 187 ◽

Cited By ~ 5

Author(s):

Chih-Chiang Shen ◽

Yun-Ting Lu ◽

Yen-Wei Yeh ◽

Cheng-Yuan Chen ◽

Yu-Tzu Chen ◽

...

Keyword(s):

Tunnel Junction ◽

Indium Tin Oxide ◽

Optical Loss ◽

Threshold Current ◽

Threshold Current Density ◽

Cavity Surface ◽

Output Performance ◽

Vertical Cavity Surface ◽

Surface Emitting Laser ◽

Vertical Cavity

In this study, we theoretically designed and experimentally fabricated an InGaN vertical-cavity surface-emitting laser (VCSEL) with a tunnel junction (TJ) structure. From numerical simulation results, the optical loss of the device can be reduced by a TJ structure. Additionally, the leakage current of the VCSEL with TJ structure was much smaller than that of the VCSEL with an Indium-Tin-Oxide (ITO) layer. We have been demonstrated that laser output performance is improved by using the TJ structure when compared to the typical VCSEL structure of the ITO layer. The output power obtained at 2.1 mW was enhanced by a factor of 3.5 by the successful reduction of threshold current density (Jth) from 12 to 8.5 kA/cm2, and the enlarged slope efficiency was due to less absorption in VCSEL with a TJ structure. Finally, the samples passed the high temperature (70 °C) and high operation current (1.5 × Jth) test for over 500 h.

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