Vertical-cavity surface-emitting laser monolithically integrated with intracavity-monitor diode with temperature-insensitive responsivity

2001 ◽  
Vol 37 (1) ◽  
pp. 34 ◽  
Author(s):  
G. Steinle ◽  
H.D. Wolf ◽  
M. Popp ◽  
K.-J. Ebeling
2013 ◽  
Vol 760-762 ◽  
pp. 147-151
Author(s):  
Bing Liang Yu ◽  
Ji Chen ◽  
Wen Yuan Li

A monolithically integrated 10Gbps Vertical Cavity Surface Emitting Laser (VCSEL) current driver is implemented in SMIC 0.18μm RF CMOS technology. High current driving capability as well as agile switching speed is achieved by shunt peaking technique and cascade structure. Test result shows that the driver can drive the common anode VCSEL well working at 10Gbps, and delivers 9.7mA modulation current. With single 1.8V power supply, the core power consumption is 22.5mW and the die size is 800μm×500μm.


2003 ◽  
Vol 76 (5) ◽  
pp. 603-608 ◽  
Author(s):  
G. Totschnig ◽  
M. Lackner ◽  
R. Shau ◽  
M. Ortsiefer ◽  
J. Rosskopf ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document