10Gbps VCSEL Driver in 0.18μm CMOS Technology
2013 ◽
Vol 760-762
◽
pp. 147-151
Keyword(s):
A monolithically integrated 10Gbps Vertical Cavity Surface Emitting Laser (VCSEL) current driver is implemented in SMIC 0.18μm RF CMOS technology. High current driving capability as well as agile switching speed is achieved by shunt peaking technique and cascade structure. Test result shows that the driver can drive the common anode VCSEL well working at 10Gbps, and delivers 9.7mA modulation current. With single 1.8V power supply, the core power consumption is 22.5mW and the die size is 800μm×500μm.
2010 ◽
Vol 46
(11)
◽
pp. 1526-1534
◽
2005 ◽
Vol 17
(7)
◽
pp. 1366-1368
◽
2012 ◽
Vol 588-589
◽
pp. 868-871
◽
Keyword(s):
1991 ◽
2019 ◽
Vol 37
(6)
◽
pp. 062928
Keyword(s):