10Gbps VCSEL Driver in 0.18μm CMOS Technology

2013 ◽  
Vol 760-762 ◽  
pp. 147-151
Author(s):  
Bing Liang Yu ◽  
Ji Chen ◽  
Wen Yuan Li

A monolithically integrated 10Gbps Vertical Cavity Surface Emitting Laser (VCSEL) current driver is implemented in SMIC 0.18μm RF CMOS technology. High current driving capability as well as agile switching speed is achieved by shunt peaking technique and cascade structure. Test result shows that the driver can drive the common anode VCSEL well working at 10Gbps, and delivers 9.7mA modulation current. With single 1.8V power supply, the core power consumption is 22.5mW and the die size is 800μm×500μm.

2012 ◽  
Vol 588-589 ◽  
pp. 868-871 ◽  
Author(s):  
Jin Fei Wang ◽  
Ying Mei Chen ◽  
Ling Tian ◽  
Li Zhang

A design of 10 Gbps Vertical Cavity Surface Emitting Laser (VCSEL) driver using 0.18µm CMOS technology is presented in this paper. The core unit of the driver consists of pre-amplify stage and output stage circuit. Technique of three stages differential amplifier with low impedance load and active feedback are employed in pre-amplify stage, and technique of C3A is adopted in output stage to get low power consume and high speed. The simulation results show that the circuit can work at the speed rate of 10 Gbps and maximum of 13 Gbps with a 1.8V power supply. The output modulation current is up to 12.5mA and the power dissipation is 77mW. The chip size is 0.45mm  0.47mm.


2003 ◽  
Vol 76 (5) ◽  
pp. 603-608 ◽  
Author(s):  
G. Totschnig ◽  
M. Lackner ◽  
R. Shau ◽  
M. Ortsiefer ◽  
J. Rosskopf ◽  
...  

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