scholarly journals Sputter‐grown GeTe/Sb 2 Te 3 superlattice interfacial phase change memory for low power and multi‐level‐cell operation

2021 ◽  
Author(s):  
Soo‐Min Jin ◽  
Shin‐Young Kang ◽  
Hea‐Jee Kim ◽  
Ju‐Young Lee ◽  
In‐Ho Nam ◽  
...  
Keyword(s):  
Low Power ◽  
Phase Change ◽  
Phase Change Memory ◽  
Interfacial Phase ◽  
Multi Level ◽  
Change Memory

scholarly journals Speeding Up the Write Operation for Multi-Level Cell Phase Change Memory with Programmable Ramp-Down Current Pulses

Micromachines ◽  
2019 ◽  
Vol 10 (7) ◽  
pp. 461 ◽  
Author(s):  
Chenchen Xie ◽  
Xi Li ◽  
Houpeng Chen ◽  
Yang Li ◽  
Yuanguang Liu ◽  
...  
Keyword(s):  
Phase Change ◽  
Current Source ◽  
Phase Change Memory ◽  
Operation Time ◽  
Access Time ◽  
Fully Differential ◽  
Current Pulses ◽  
Multi Level ◽  
The Impact ◽  
Change Memory

Multi-level cell (MLC) phase change memory (PCM) can not only effectively multiply the memory capacity while maintaining the cell area, but also has infinite potential in the application of the artificial neural network. The write and verify scheme is usually adopted to reduce the impact of device-to-device variability at the expense of a greater operation time and more power consumption. This paper proposes a novel write operation for multi-level cell phase change memory: Programmable ramp-down current pulses are utilized to program the RESET initialized memory cells to the expected resistance levels. In addition, a fully differential read circuit with an optional reference current source is employed to complete the readout operation. Eventually, a 2-bit/cell phase change memory chip is presented with a more efficient write operation of a single current pulse and a read access time of 65 ns. Some experiments are implemented to demonstrate the resistance distribution and the drift.

Multi-level phase-change memory with ultralow power consumption and resistance drift

2021 ◽  
Author(s):  
Bin Liu ◽  
Kaiqi Li ◽  
Wanliang Liu ◽  
Jian Zhou ◽  
Liangcai Wu ◽  
...  
Keyword(s):  
Power Consumption ◽  
Phase Change ◽  
Phase Change Memory ◽  
Multi Level ◽  
Ultralow Power ◽  
Change Memory

Si2Sb2Te6Phase Change Material for Low-Power Phase Change Memory Application

2009 ◽  
Vol 2 (9) ◽  
pp. 091401 ◽  
Author(s):  
Xilin Zhou ◽  
Liangcai Wu ◽  
Zhitang Song ◽  
Feng Rao ◽  
Bo Liu ◽  
...  
Keyword(s):  
Low Power ◽  
Phase Change ◽  
Phase Change Memory ◽  
Change Material ◽  
Change Memory

Ultra-Long Retention and Low Power Consumption of Superlattice-Like Ge50Te50/Ge Thin Films for Phase Change Memory Application

2019 ◽  
Vol 8 (10) ◽  
pp. P563-P566
Author(s):  
Jianhao Zhang ◽  
Yifeng Hu ◽  
Rui Zhang ◽  
Hua Zou ◽  
Jianzhong Xue ◽  
...  
Keyword(s):  
Thin Films ◽  
Power Consumption ◽  
Low Power ◽  
Phase Change ◽  
Phase Change Memory ◽  
Low Power Consumption ◽  
Change Memory

Endurance Enhancement of Multi-Level Cell Phase Change Memory

2019 ◽  
Author(s):  
Cheongwon Lee ◽  
Youngsoo Song ◽  
Youngsoo Shin
Keyword(s):  
Phase Change ◽  
Phase Change Memory ◽  
Multi Level ◽  
Change Memory

scholarly journals Chalcogenide van der Waals superlattices: a case example of interfacial phase-change memory

2019 ◽  
Vol 91 (11) ◽  
pp. 1777-1786 ◽  
Author(s):  
Yuta Saito ◽  
Paul Fons ◽  
Kirill V. Mitrofanov ◽  
Kotaro Makino ◽  
Junji Tominaga ◽  
...  
Keyword(s):  
Transition Metal ◽  
Phase Change ◽  
Topological Insulators ◽  
Van Der Waals ◽  
Transition Metal Dichalcogenides ◽  
Phase Change Memory ◽  
Interfacial Phase ◽  
Metal Dichalcogenides ◽  
Superlattice Structures ◽  
Change Memory

Abstract 2D van der Waals chalcogenides such as topological insulators and transition-metal dichalcogenides and their heterostructures are now at the forefront of semiconductor research. In this paper, we discuss the fundamental features and advantages of van der Waals bonded superlattices over conventional superlattices made of 3D materials and describe in more detail one practical example, namely, interfacial phase change memory based on GeTe–Sb2Te3 superlattice structures.

scholarly journals Origin of resistivity contrast in interfacial phase-change memory: The crucial role of Ge/Sb intermixing

2019 ◽  
Vol 114 (13) ◽  
pp. 132102 ◽  
Author(s):  
Yuta Saito ◽  
Alexander V. Kolobov ◽  
Paul Fons ◽  
Kirill V. Mitrofanov ◽  
Kotaro Makino ◽  
...  
Keyword(s):  
Phase Change ◽  
Crucial Role ◽  
Phase Change Memory ◽  
Interfacial Phase ◽  
Change Memory

scholarly journals Low Power Phase Change Memory With Vertical Carbon Nanotube Electrode

2017 ◽  
Vol 5 (5) ◽  
pp. 362-366
Author(s):  
Panni Wang ◽  
Yihan Chen ◽  
Suwen Li ◽  
Salahuddin Raju ◽  
Longyan Wang ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Low Power ◽  
Phase Change ◽  
Phase Change Memory ◽  
Change Memory
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