scholarly journals Avoiding instabilities in power electronic systems: toward an on‐chip implementation

2017 ◽  
Vol 10 (13) ◽  
pp. 1778-1787 ◽  
Author(s):  
Abdullah Abusorrah ◽  
Kuntal Mandal ◽  
Damian Giaouris ◽  
Abdelali El Aroudi ◽  
Mohammed M. Al‐Hindawi ◽  
...  
Keyword(s):  
Electronic Systems ◽  
Power Electronic ◽  
On Chip

scholarly journals Embedded real-time simulators for electromechanical and power electronic systems using system-on-chip devices

2019 ◽  
Vol 158 ◽  
pp. 326-343 ◽  
Author(s):  
Daniel Tormo ◽  
Lahoucine Idkhajine ◽  
Eric Monmasson ◽  
Ricardo Vidal-Albalate ◽  
Ramon Blasco-Gimenez
Keyword(s):  
Real Time ◽  
System On Chip ◽  
Electronic Systems ◽  
Power Electronic ◽  
On Chip

Simulation of Power Electronic Systems

2002 ◽  
Vol 122 (8) ◽  
pp. 775-780
Author(s):  
Yasuaki Kuroe ◽  
Mikihiko Matsui
Keyword(s):  
Electronic Systems ◽  
Power Electronic

Low-Cost High-Speed Techniques for Real-Time Simulation of Power Electronic Systems

2007 ◽  
Author(s):  
R. E. Crosbie ◽  
J. J. Zenor ◽  
R. Bednar ◽  
D. Word ◽  
N. G. Hingorani
Keyword(s):  
Real Time ◽  
High Speed ◽  
Low Cost ◽  
Electronic Systems ◽  
Power Electronic ◽  
Real Time Simulation ◽  
Time Simulation

Active cancellation of periodic EMI of power electronic systems by injecting artificially synthesized signals

2020 ◽  
Vol 9 (3) ◽  
pp. 63-72
Author(s):  
Andreas Bendicks ◽  
Tobias Dorlemann ◽  
Timo Osterburg ◽  
Stephan Frei
Keyword(s):  
Electronic Systems ◽  
Power Electronic ◽  
Active Cancellation

scholarly journals Short-Circuit Capability Exploration of Silicon Carbide Devices

2015 ◽  
Vol 821-823 ◽  
pp. 810-813 ◽  
Author(s):  
Maxime Berthou ◽  
Dominique Planson ◽  
Dominique Tournier
Keyword(s):  
Silicon Carbide ◽  
Short Circuit ◽  
Electronic Systems ◽  
Power Electronic ◽  
Power Transistor ◽  
Power Transistors ◽  
Capacitive Load ◽  
Short Circuit Condition

With the commercial availability of SiC power transistors, this decade will mark an important breakthrough in power transistor technology. However, in power electronic systems, disturbances may place them in short-circuit condition and little knowledge exist about their SC capability. This paper presents our study of SiC MOSFETs, JFETs and BJT under capacitive load short-circuit up to 600V.

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